72193
Abstract: Si6467BDQ
Text: SPICE Device Model Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6467BDQ
19-Mar-03
72193
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Si6413DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6413DQ
19-Mar-03
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2322 vishay
Abstract: D235C ND 433 A
Text: 2322 574 1. Vishay BCc Surface Mount Multilayer Varistors FEATURES ∑ Surface mount multilayer surge suppressor ∑ Inherent bidirectional clamping ∑ Low capacitance types available ∑ Excellent energy/volume ratio ∑ Suitable for wave or reflow soldering
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2012M)
57xx1003
57xx0803
57xx0603
57xx0403
57xx2583
57xx2503
57xx2003
57xx1703
57xx1403
2322 vishay
D235C
ND 433 A
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Si6463BDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6463BDQ
19-Mar-03
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Si3481DV
Abstract: No abstract text available
Text: SPICE Device Model Si3481DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3481DV
0-to-10V
19-Mar-03
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1469001-1
Abstract: No abstract text available
Text: 501-568 Qualification Test Report 04Apr05 Rev A EC 0990-0435-05 Two, Three and Four Pair HM-Zd Connectors | 1. INTRODUCTION 1.1. Purpose Testing was performed on Tyco Electronics Two and Four Pair HM-Zd Connectors to determine their conformance to the requirements of Product Specification 108-2055 Revision B.
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04Apr05
19Mar03
09Sep03.
B026948-030.
1469001-1
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PWM 003
Abstract: CPU08 HC08 M68HC08 M68HC908 MC68HC908QT4 MC68HC908QY1 MC68HC908QY2 MC68HC908QY4 transistor bra 94
Text: Freescale Semiconductor Application Note AN2475/D 3/2003 Freescale Semiconductor, Inc. Generating a PWM Signal Modulated by an Analog Input Using the MC68HC908QY4 Microcontroller By: Alfredo Olmos Andre Vilas Boas Marcus Serra Espindola Brazil Semiconductor Technology Center
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AN2475/D
MC68HC908QY4
MC68HC908QY/QT
PWM 003
CPU08
HC08
M68HC08
M68HC908
MC68HC908QT4
MC68HC908QY1
MC68HC908QY2
MC68HC908QY4
transistor bra 94
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Untitled
Abstract: No abstract text available
Text: RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT TOP OF PCB LP 12.29 [.484] 0.10 [.004] MAX 20.60 [.811] 16.66 [.656] 8 11.43±0.13 [.450±.005] RECOMMENDED PCB LAYOUT COMPONENT MOUNTING SIDE LOCHBILD FUER LEITERPLATTE (BESTUECKUNGSSEITE) TOL ±0.05 [.002] UNLESS NOTED
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M2C01
19MAR03
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72191
Abstract: Si4911DY
Text: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4911DY
19-Mar-03
72191
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IT3200
Abstract: IT5325BE RAKON XTAL TCXO rakon marking code C3 SMD ic RAKON TCXO IT5300B IT530 GR201
Text: IT5325BE 20.0 MHz SPECIFICATION MODEL IT5300B SMD Temperature Compensated Crystal Oscillators High Stability SMD TCXO using an analogue IC for compensation. Frequencies ranging from 13MHz to 30MHz. Product Description The IT5300B employs an analogue IC for the oscillator and
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IT5325BE
IT5300B
13MHz
30MHz.
IT5300B
IT/IVT5300
21-Mar-03
IT3200
RAKON XTAL
TCXO rakon
marking code C3 SMD ic
RAKON TCXO
IT530
GR201
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Si6443DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6443DQ
0-to-10V
19-Mar-03
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Si6544DQ
Abstract: Si6544DQ SPICE Device Model 72161
Text: SPICE Device Model Si6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6544DQ
0-to-10V
19-Mar-03
Si6544DQ SPICE Device Model
72161
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Si3491DV
Abstract: No abstract text available
Text: SPICE Device Model Si3491DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3491DV
19-Mar-03
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transistor bra 94
Abstract: HC908QY4 CPU08 HC08 M68HC08 M68HC908 MC68HC908QT4 MC68HC908QY1 MC68HC908QY2 MC68HC908QY4
Text: Freescale Semiconductor, Inc. Application Note AN2475/D 3/2003 Freescale Semiconductor, Inc. Generating a PWM Signal Modulated by an Analog Input Using the MC68HC908QY4 Microcontroller By: Alfredo Olmos Andre Vilas Boas Marcus Serra Espindola Brazil Semiconductor Technology Center
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Original
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PDF
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AN2475/D
MC68HC908QY4
MC68HC908QY/QT
transistor bra 94
HC908QY4
CPU08
HC08
M68HC08
M68HC908
MC68HC908QT4
MC68HC908QY1
MC68HC908QY2
MC68HC908QY4
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MRFIC1856
Abstract: MRFIC1856R2 VG12
Text: Order this document by MRFIC1856/D Freescale Semiconductor, Inc. Advance Information Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Dual-Band/Dual-Mode pHEMT GaAs IPA The MRFIC1856 is designed for dual–band subscriber equipment applications at 3.6 V in the cellular 800 MHz and PCS (1900 MHz) bands.
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MRFIC1856/D
MRFIC1856
19SEP02
19MAR03
MRFIC1856
MRFIC1856R2
VG12
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Untitled
Abstract: No abstract text available
Text: 2322 574 1. Vishay BCc Surface Mount Multilayer Varistors FEATURES • Surface mount multilayer surge suppressor • Inherent bidirectional clamping • Low capacitance types available • Excellent energy/volume ratio • Suitable for wave or reflow soldering
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2012M)
57xx1003
57xx0803
57xx0603
57xx0403
57xx2583
0E-05
0E-04
0E-03
0E-02
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72190
Abstract: Si4431BDY
Text: SPICE Device Model Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4431BDY
0-to-10V
19-Mar-03
72190
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Si6411DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6411DQ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6411DQ
19-Mar-03
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING MADE IN THIRD ANGLE PROJECTION T H I S DRAWING 15 UNPUBLI5HED RELEASED FOR P UB LICATIO N C O P Y R I G H T 19 BY AMP I N C O RP O RA TE D. A L L I N T E R N A T I O N A L 6 5 19 <3> 3 4 2 LOC RIGHTS RESERVED. AD REV I 5 I 0 N 5 DI ST 00 ZONE
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AD4218
AD6187
19-MAR-03
US040973
/home/us040973/dmmod
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Untitled
Abstract: No abstract text available
Text: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST 22 AA BY TYCO ELECTRONIC5 CORPORATION. REVISIONS LTR DESCRIPTION H 2 0 .8 3 A [. 1 6 .1 3 635 3 .8 1 [. 1 5 0 ] ] [. ] - 1 0 . 6 7 - ► 420 APVD
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19MAR03
27/xm[
03/xm
12feb95
z7apr95
3may95
31mar2000
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D9D SOT
Abstract: 966L ic ad 7550 8850 HM
Text: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 6 5 RELEASED BY 19 AMP 3 4 2 <3> PROJ E CT I ON FOR P U B L I C A T I O N INCORPORATED. A LL I N T E R N A T I ON A L LOC 19 RI GHTS D I ST 00 AD RESERVED. REV I 5 I 0 N 5 ZONE D E5CR[PTIO N
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d3H01Sn0
70sn/eLUOM/
Z60t70sn
133HS
39V0S
9S000
d3999S
999NV
Z6/ZZ/10
06/M/S0
D9D SOT
966L
ic ad 7550
8850 HM
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Untitled
Abstract: No abstract text available
Text: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD 15 ANGL E UNPUBLI5HED COPYRIGHT 6 5 19 RELEASED BY 3 4 2 <3> PROJECTION AMP FOR PUBLICATION INCORPORATED. ALL I NTERNATI ONAL LOC 19 RIGHTS DI ST 00 AD RESERVED. DIA 3 REV I 5 I0N5 ZO N E LTR D E 5 C R [P T IO N ECN AD4218
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AD4218
19-MAR-03
us040973
/home/us040973/dmmod
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