17127
Abstract: data 8873 AN609 Si4911DY
Text: Si4911DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4911DY
AN609
19-Mar-07
17127
data 8873
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Untitled
Abstract: No abstract text available
Text: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6
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Si4911DY
08-Apr-05
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Si4911DY
Abstract: No abstract text available
Text: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process
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Si4911DY
Si4911DY-T1
Si4911DY-T1-E3
S-61005-Rev.
12-Jun-06
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Si4911DY
Abstract: No abstract text available
Text: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6
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Si4911DY
S-03004--Rev.
27-Jan-03
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72191
Abstract: Si4911DY
Text: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4911DY
19-Mar-03
72191
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Si4911DY
Abstract: No abstract text available
Text: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process
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Si4911DY
Si4911DY-T1
Si4911DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process
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Si4911DY
Si4911DY-T1
Si4911DY-T1-E3
08-Apr-05
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Si4911DY
Abstract: No abstract text available
Text: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4911DY
S-52285Rev.
31-Oct-05
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Si4911DY
Abstract: diode Rl 201
Text: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4911DY
18-Jul-08
diode Rl 201
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Si4911DY
Abstract: Si4921DY
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application
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Si4921DY
20-May-04
Si4911DY
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