Si3491DV
Abstract: Si3491DV-T1 S408
Text: Si3491DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.044 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.9 0.076 @ VGS = −1.8 V −4.3 APPLICATIONS D Load Switch
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Si3491DV
Si3491DV-T1
Si3491DV-T1--E3
S-40838--Rev.
03-May-04
S408
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Si3491DV
Abstract: No abstract text available
Text: SPICE Device Model Si3491DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3491DV
19-Mar-03
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Si3491DV-T1
Abstract: No abstract text available
Text: Si3491DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.044 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.9 0.076 @ VGS = −1.8 V −4.3 APPLICATIONS D Load Switch
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Si3491DV
Si3491DV-T1
Si3491DV-T1--E3
08-Apr-05
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PDF
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Si3491DV
Abstract: Si3491DV-T1
Text: Si3491DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.044 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.9 0.076 @ VGS = −1.8 V −4.3 APPLICATIONS D Load Switch
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Si3491DV
Si3491DV-T1
Si3491DV-T1--E3
18-Jul-08
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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