Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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FDS9953A
Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS9953A
FDS9953A
9953A
CBVK741B019
F011
F63TNR
F852
L86Z
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FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
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FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
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F63TNR
Abstract: FDFS2P102A soic-8 33a
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
F63TNR
FDFS2P102A
soic-8 33a
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diode sod123 W1
Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OD-123
OD123
177cm
330cm
diode sod123 W1
CBVK741B019
F63TNR
MMSZ5221B
sod123 E2
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SSOT-3
Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB649
SSOT-3
CBVK741B019
F63TNR
FSB649
MMSZ5221B
SuperSOTTM -3
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FDS6688
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6688
FDS6688
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
rca tube 56
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FDS9945
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS9945
FDS9945
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
86 diode
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.
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FDS3812
CBVK741B019
F011
F63TNR
F852
FDS3812
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6692
CBVK741B019
F011
F63TNR
F852
FDS6692
FDS9953A
L86Z
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F852 transistor
Abstract: F852 CBVK741B019 F63TNR PN2222A
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
177cm
F852 transistor
F852
CBVK741B019
F63TNR
PN2222A
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NDS spec
Abstract: 9959 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z fairchild soic marking fairchild NDS
Text: SOIC-8 Tape and Reel Data SOIC 8lds Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is
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330cm
177il
NDS spec
9959
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
fairchild soic marking
fairchild NDS
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fairchild NDS
Abstract: marking w66
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
fairchild NDS
marking w66
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Untitled
Abstract: No abstract text available
Text: FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS7764S
FDS7764S
FDS7764A
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Untitled
Abstract: No abstract text available
Text: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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Untitled
Abstract: No abstract text available
Text: FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6892AZ
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Untitled
Abstract: No abstract text available
Text: FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS3601
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Untitled
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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Untitled
Abstract: No abstract text available
Text: Hardware HARDWARE Par t Number BH1AAWKI T BH2AAWKI T BH1AAAWKI T BH2AAAWKI T BH3AAAWKI T BH4AAAWKI T BS61KI T 1427KR 1448A20 1448R6 1448R8 1448R10 1448R12 1448R14 1590ORI NG-100 1591AC 1591BC 1591CC 1591DC 1591EC 1591GC 1591HC 1591LC 1591SC 1591TC 1591UC 1591VC
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BS61KI
1427KR
1448A20
1448R6
1448R8
1448R10
1448R12
1448R14
1590ORI
NG-100
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D1RW-C13-008
Abstract: Dialight beacon d464 d1rw-c13 led fixture TZC17 L864 L-865 beacon simple traffic light controller 3 led xenon tubes
Text: L-864 L-865 / L-864 L-810 L-810 LED Based Obstruction Lights LED Lighting Brochure for Obstruction Applications Certified to: FAA AC NO: 150/5345-43F FAA Engineering Brief No. 67 Compliant to: ICAO Annex 14, 4th Edition, July 2004 ICAO Aerodromes Design Manual, Chapter 18
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L-864
L-865
L-810
150/5345-43F
L-864/L-865
RTO-1R07-004
RTO-6R07-004
RTO-1R06-004
D1RW-C13-008
Dialight beacon
d464
d1rw-c13
led fixture
TZC17
L864
L-865 beacon
simple traffic light controller 3 led
xenon tubes
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948d
Abstract: No abstract text available
Text: FC-12A 2 x 2.5 mm MOSFET BGA Tape and Reel Dimensions FC-12A MOSFET BGA Packaging Configuration: Figure 1 Packaging Description: FC-12A MOSFET BGA parts are shipped in tape and reel. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-12A
177cm
948d
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Untitled
Abstract: No abstract text available
Text: K&L Microwave Product Catalog Table of Contents ◆ About K&L Microwave 4 ◆ ◆ Terms & Definitions 8 ◆ Suspended Substrate ◆ Specifying Filters 10 ◆ Topology vs. Frequency Range 14 ◆ Lumped Components 17 K L-fil Ceramic Filters E 71 -Bandpass — SB Series
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CBVK741B019
Abstract: F011 F63TNR F852 FDS4501H FDS9953A L86Z
Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
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FDS4501H
CBVK741B019
F011
F63TNR
F852
FDS4501H
FDS9953A
L86Z
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