CTL2246-300-004
Abstract: No abstract text available
Text: 501-376 Qualification Test Report 18May09 Rev B CERTI-SEAL* Buried Service Wire Splice Closure 1. INTRODUCTION 1.1. Purpose Testing was perform ed on the CERTI-SEAL* buried service wire splice closure to determ ine its conform ance to the requirem ents of Product Specification 108-1673 Revision B.
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18May09
08Jul97
22Sep97.
CTL2246-300-004.
CTL2246-300-004
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GR-3151-CORE
Abstract: No abstract text available
Text: Product Specification 108-1673 18May09 Rev B CERTI-SEAL* Buried Service Wire Splice Closure 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the CERTI-SEAL* buried service wire splice closure. 1.2. Qualification
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18May09
22Sep97.
05May09.
GR-3151-CORE
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*4947ad
Abstract: No abstract text available
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4947ADY
2002/95/EC
Si4947ADY-T1-E3
Si4947ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
*4947ad
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Untitled
Abstract: No abstract text available
Text: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4953ADY
2002/95/EC
Si4953ADY-T1-E3
Si4953ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21
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Si4542DY
2002/95/EC
Si4542DY-T1-E3
Si4542DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 9.6 0.017 at VGS = 4.5 V 8.6 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V -5 • Halogen-free According to IEC 61249-2-21
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Si4511DY
2002/95/EC
Si4511DY-T1-E3
Si4511DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
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SiS438DN
2002/95/EC
SiS438DN-T1-GE3
11-Mar-11
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Si9410BDY
Abstract: Si9410BDY-T1-E3
Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si9410BDY
2002/95/EC
Si9410BDY-T1-E3
Si9410BDY-T1-GE3
11-Mar-11
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Si4816DY
Abstract: Si4816DY-T1-E3
Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21
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Si4816DY
2002/95/EC
11-Mar-11
Si4816DY-T1-E3
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Si4840DY
Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4840DY
2002/95/EC
Si4840DY-T1-E3
Si4840DY-T1-GE3
11-Mar-11
US2050
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Si4628DY
Abstract: si4628
Text: Si4628DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0030 at VGS = 10 V 38 0.0038 at VGS = 4.5 V 33 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Gen III
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Si4628DY
2002/95/EC
Si4628DY-T1-GE3
11-Mar-11
si4628
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Untitled
Abstract: No abstract text available
Text: IHLP-5050FD-L1 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • Shielded construction Frequency range up to 5.0 MHz Lowest DCR/µH, in this package size Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction
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IHLP-5050FD-L1
18-Jul-08
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition
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Si4967DY
2002/95/EC
Si4967DY-T1-E3
Si4967DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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P-channel power mosfet SO-8
Abstract: SI4544DY
Text: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4544DY
2002/95/EC
Si4544DY-T1-E3
Si4544DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
P-channel power mosfet SO-8
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Untitled
Abstract: No abstract text available
Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4501ADY
2002/95/EC
Si4501ADY-T1-E3
Si4501ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4966DY
2002/95/EC
Si4966DY-T1-E3
Si4966DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4925BDY
2002/95/EC
Si4925BDY-T1-E3
Si4925BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.0155 at VGS = 10 V 9.5 0.0205 at VGS = 4.5 V 8.2 • Halogen-free According to IEC 61249-2-21
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Si4818DY
2002/95/EC
Si4818DY-T1-E3
Si4818DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • Halogen-free According to IEC 61249-2-21
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Si4562DY
2002/95/EC
Si4562DY-T1-E3
Si4562DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4947ADY
2002/95/EC
Si4947ADY-T1-E3
Si4947ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4980DY
Abstract: Si4980DY-T1-E3
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
11-Mar-11
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