hssdc
Abstract: hssdc2
Text: 107-68442 Packaging Specification 18Jan10 Rev G REC ASSY, HSSDC II CONN. 1. PURPOSE 目的 Define the packaging specifiction and packaging method of REC ASSY, HSSDC II CONN. 订定 REC ASSY, HSSDC II CONN. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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18Jan10
QR-ME-030B
hssdc
hssdc2
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traytray
Abstract: INNER CARTON LABEL
Text: 107-68135 Packaging 18Jan10 Rev D Specification M III SOCKET VERTICAL 90P DIP TYPE DIMM SOCKET 1. PURPOSE 目的 Define the packaging specifiction and packaging method of M III SOCKET VERTICAL 90P DIP TYPE (DIMM SOCKET) product. 订定 M III SOCKET VERTICAL 90P DIP TYPE (DIMM SOCKET) 产品之包装规格及包装方式。
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18Jan10
405X316X13
405X316X1
410X326X100
QR-ME-030B
traytray
INNER CARTON LABEL
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STR 456
Abstract: 1600626-X 1600616 1600616-X 1-292499-1 HDR 2x10
Text: 107-68703 Packaging Specification 18Jan10 Rev S MBXL HSG 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MBXL HSG. 订定 MBXL HSG 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 PKG TYPE Part Number Description
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18Jan10
292499-X
1761819-X
1600861-X
1600865-X
QR-ME-030B
STR 456
1600626-X
1600616
1600616-X
1-292499-1
HDR 2x10
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usb plug
Abstract: "USB plug" MR500
Text: 107-68891 Packaging Specification 18Jan10 Rev B INDUSTRIAL USB PLUG KIT 1. PURPOSE 目的 Define the packaging specifiction and packaging method of INDUSTRIAL USB PLUG KIT. 订定 INDUSTRIAL USB PLUG KIT 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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18Jan10
461L-292
W-28H
W-14H
477L-309W-305H
813x610
102x102
45sub
1871663-11279581-1tray50
usb plug
"USB plug"
MR500
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Si1303DL-T1-gE3
Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition
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Si1303DL
2002/95/EC
OT-323
SC-70
Si1303DL-T1-E3
Si1303DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
sc70-3 PCB PAD
SI1303D
SOT-323 31 MOSFET
sc-70 package pcb layout
F MARKING 6PIN
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Untitled
Abstract: No abstract text available
Text: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
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SUP85N10-10,
SUB85N10-10
2002/95/EC
O-220AB
O-263
SUP85N10-10
SUP85N10-10-E3
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SI7143DP-T1-GE3
Abstract: Si7143DP si7143
Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7143DP
2002/95/EC
Si7143DP-T1-GE3
18-Jul-08
si7143
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IRF9640S
Abstract: IRF9640 SiHF9640S SiHF9640S-E3 IRF9640STRRPBF
Text: IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single G G G D S Surface Mount Available in Tape and Reel
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IRF9640S,
SiHF9640S
IRF9640L,
SiHF9640L
2002/95/EC
O-263)
O-262)
18-Jul-08
IRF9640S
IRF9640
SiHF9640S-E3
IRF9640STRRPBF
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65750
Abstract: No abstract text available
Text: SPICE Device Model SiB455EDK Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiB455EDK
18-Jul-08
65750
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sud50n04-8m8p
Abstract: SUD50N04-8m8P-4GE3 diode 50A
Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD50N04-8m8P
2002/95/EC
O-252
SUD50N04-8m8P-4GE3
18-Jul-08
sud50n04-8m8p
SUD50N04-8m8P-4GE3
diode 50A
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Untitled
Abstract: No abstract text available
Text: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0
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Si4650DY
2002/95/EC
Si4650DY-T1-E3
Si4650DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si2300DS
Abstract: No abstract text available
Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2300DS
2002/95/EC
O-236
OT-23)
Si2300DS-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition
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Si1303DL
2002/95/EC
OT-323
SC-70
Si1303DL-T1-E3
Si1303DL-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition
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Si1903DL
2002/95/EC
OT-363
SC-70
Si1903DL-T1-E3
Si1903DL-T1-GE3
15hay
11-Mar-11
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F MARKING 6PIN
Abstract: No abstract text available
Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition
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Si1305DL
2002/95/EC
OT-323
SC-70
Si1305DL-T1-E3
Si1305DL-T1-GE3
11-Mar-11
F MARKING 6PIN
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Untitled
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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D1002-BD
18-Jan-10
MIL-STD-883
rep1002-BD-000V
XD1002-BD-EV1
XD1002-BD
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Untitled
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition
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Si1303DL
2002/95/EC
OT-323
SC-70
Si1303DL-T1-E3
Si1303DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD50N04-8m8P
2002/95/EC
O-252
SUD50N04-8m8P-4GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SSD1963
Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com
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SSD1963
1215KB
SSD1963
21-Nov-08
08-Dec-08
24-Nov-08
2002/95/EC
SSD1963QL9
SSD1963 16 bit
SSD1963G41
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 00 4 2 4 RELEASED FOR PUBLICATION 14JAN ,2 0 0 4 - R E V IS IO N S ALL RIGHTS RESERVED. By - E P LTR DESCRIPTION c C1 D C2 DATE DWN APVD E C R —0 6 —0 2 1 0 3 0 22SEP06 AM FWK REVISED PER ECO-10-000444 18JAN10
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14JAN
22SEP06
ECO-10-000444
18JAN10
01FEB11
ECR-10-022205
14JAN04
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT DW BY TYCO ELECTRONICS CORPORATION. - R E V IS IO N S DE SC R IPTIO N LTR A' POSITION REVI SED PER DWN DATE KK HMR 18JAN10 E C O - 10 - 0 0 0 4 4 4
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OCR Scan
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ECO-10-000444
18JAN10
UL94V-0.
360PCS)
31MAR2000
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GR 1816
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - R E V IS IO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N PER 04NOV03 JR GP KK HMR 18JAN10
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OCR Scan
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04NOVO3
18JAN'
MAY2002
MAY02
00779CM
31MAR2000
GR 1816
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. 10# COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 4 2 - ALL INTERNATIONAL RIGHTS RESERVED. 2 .3 9 + 0 .0 8 2 PLC LOC DIST GP 00 R E V IS IO N S CONTACT: 0 . 0 0 0 7 6 GOLD AT INTERLACE. 0 . 0 0 2 5 4 MIN T IN - L E A D
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15SEP09
18JAN10
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ic 8893
Abstract: 8385 ic 40 hmr 120
Text: 4 TH IS D R AW IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL COPYRIGHT P U B LIC A TIO N R IG H T S 14JAN ,2 0 0 4 - R E V IS IO N S RESERVED. E 2004 LT R D E S C R IP T IO N ECR- 01 DATE -021030 REVISED PER ECO-10-000444 D C2 ECR-10-022205 DWN APVD 22SEP06
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OCR Scan
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14JAN
22SEP06
ECO-10-000444
ECR-10-022205
18JAN10
01FEB11
14JAN04
ic 8893
8385 ic
40 hmr 120
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