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    Untitled

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 11Preliminary 512Mbit 32bits 200us

    H55S5132DFR

    Abstract: H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram H55S5122DFR
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit H55S5122DFR H55S5132DFR 32bits 200us H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram

    HY5S7B2ALFP

    Abstract: RA12
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit 32bits 200us HY5S7B2ALFP RA12

    Untitled

    Abstract: No abstract text available
    Text: 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb 16Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 16Mx32bit) 512Mbit 32bit) H5MS5122DFR H5MS5132DFR 32bits)

    BC939

    Abstract: aj17 cc 166 3p3 am2 1 10u 3p3 TP021 AMD ATHLON 64 X2 AM2 pin out Socket AM2 C51M rtl8111b 1U22 pmt R663
    Text: 5 MSI 4 MS-16352 3 2 1 Ver:0A AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge


    Original     		PDF MS-16352 638-Pin 200-PIN 16MX32bit C51MV RTL8111B 6855B OZ711MP1 MCP51M BC939 aj17 cc 166 3p3 am2 1 10u 3p3 TP021 AMD ATHLON 64 X2 AM2 pin out Socket AM2 C51M rtl8111b 1U22 pmt R663

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    AS4C16M32MD1

    Abstract: No abstract text available
    Text: AS4C16M32MD1 512M 16M x32 bit Mobile DDR SDRAM Confidential (Rev. 1.0, July. /2014) LPDDR MEMORY 512M (16Mx32bit) Mobile DDR SDRAM Revision History Revision No 1.0 Description Initial Release Date 2014/07/18 AS4C16M32MD1 512M (16M x32 bit) LP Mobile DDR SDRAM


    Original     		PDF AS4C16M32MD1 16Mx32bit) 512Mbit 200MHz 400Mbps AS4C16M32MD1

    H55S512

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit H55S5122DFR H55S5132DFR 32bits 200us H55S512

    CI-300

    Abstract: MS-16382 c51p rtl8111b nvidia c51mv MAX8774GTL RN0402 MCP51M AMD ATHLON 64 X2 AM2 pin out Socket AM2
    Text: 5 MSI 4 MS-16382 3 2 1 Ver:0B AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge


    Original     		PDF MS-16382 638-Pin 200-PIN 16MX32bit C51MV RTL8111B 6855B OZ711MP1 MCP51M CI-300 MS-16382 c51p rtl8111b nvidia c51mv MAX8774GTL RN0402 MCP51M AMD ATHLON 64 X2 AM2 pin out Socket AM2

    VSC8601

    Abstract: VSX8601 MEPA 240KR1 MCP51M MAX8774GTL MS-16332 buf c043 R029 Socket AM2
    Text: 5 MSI 4 MS-16332 3 2 1 Ver:0A AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge


    Original     		PDF MS-16332 638-Pin 200-PIN 16MX32bit C51MV 6855B OZ711MP1 MCP51M ALC883 VSC8601 VSX8601 MEPA 240KR1 MCP51M MAX8774GTL MS-16332 buf c043 R029 Socket AM2

    HY5S7B2A

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit 32bits Page10) 200us HY5S7B2A

    ENE3910

    Abstract: AM612 alc882 SMD D62 Socket AM2 Socket 754 "Socket 754" CMC 1039 RTL8101L 47K-0402
    Text: 5 MSI 4 3 2 1 MS-1039 Ver:0A D D D D R 333/400 AMD K8 Socket 754 GDDR3 16MX32bit*4PCS Clock Generator 3~6 17 15~16 7 8 HT D D R SODIMM * 2 LCD LVDS C DVI TV OUT RGB 26 North Bridge PCIE ATI M56-P 32 NEW CARD PCI-E/USB PCI-E PCIE VGA 32 12~14 C ATI RX480


    Original     		PDF MS-1039 16MX32bit M56-P RX480 RTL8101L Oz711MP 1394a SB450 ENE3910 ALC882 ENE3910 AM612 alc882 SMD D62 Socket AM2 Socket 754 "Socket 754" CMC 1039 47K-0402

    alc882

    Abstract: LG-2413S-1 GDDR3 512MBITS CMC 1039 LG2413S LM358 121-1040 Socket AM2 Socket 754 "Socket 754"
    Text: 5 MSI 4 3 2 1 MS-1039 Ver:0B D D DDR 333/400 AMD K8 Socket 754 GDDR3 16MX32bit*4PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS VGA 32 C DVI TV OUT RGB 26 North Bridge PCIE ATI M56-P 32 NEW CARD PCI-E/USB PCI-E PCIE 12~14 ATI RX480 LAN RTL8111B


    Original     		PDF MS-1039 16MX32bit M56-P RX480 RTL8111B Oz711MP 1394a SB450 ENE3910 ALC882 alc882 LG-2413S-1 GDDR3 512MBITS CMC 1039 LG2413S LM358 121-1040 Socket AM2 Socket 754 "Socket 754"

    Untitled

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit 32bits 200us

    H5MS5122DFR

    Abstract: H5MS5122DFR-J3M DDR333 DDR400 h5ms H5MS5132DFR
    Text: 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb 16Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 16Mx32bit) 512Mbit 32bit) H5MS5122DFR H5MS5132DFR 32bits) H5MS5122DFR-J3M DDR333 DDR400 h5ms

    HY5S7B2ALFP

    Abstract: RA12 HY5S7B2A
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 11Preliminary 512Mbit 32bits 200us HY5S7B2ALFP RA12 HY5S7B2A

    KMM53216000BK

    Abstract: KMM53216000BKG
    Text: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53216000BK/BKG KMM53216000BK/BKG 16Mx4, KMM53216000B 16Mx32bits 16Mx4bits 72-pin KMM53216000BK KMM53216000BKG

    HSD16M32D4

    Abstract: HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12
    Text: HANBit HSD16M32D4 Synchronous DRAM Module 64Mbyte 16Mx32-Bit , 100pin DIMM, 4Banks, 8K Ref., 3.3V Part No. HSD16M32D4 GENERAL DESCRIPTION The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.


    Original     		PDF HSD16M32D4 64Mbyte 16Mx32-Bit) 100pin HSD16M32D4 400mil 100-pin HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12

    DAC335

    Abstract: RE110 p10 LED display single color module schematic BTA 139 m932 schematic diagram of bluetooth headphone SYNCFLASH DAC3550A ISP1105W DB9 RS232 stereo JAck 2.5mm
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. M9328MXLADSUM/D Rev 3 February 19, 2004 M9328MXLADS/A Application Development System User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com


    Original     		PDF M9328MXLADSUM/D M9328MXLADS/A DAC335 RE110 p10 LED display single color module schematic BTA 139 m932 schematic diagram of bluetooth headphone SYNCFLASH DAC3550A ISP1105W DB9 RS232 stereo JAck 2.5mm

    PS3 computer motherboard circuit diagram

    Abstract: Ps3 MOTHERBOARD CIRCUIT diagram MPC5200 gigabyte 865 MOTHERBOARD CIRCUIT diagram gigabyte 945 motherboard electrical diagram FX mode ethernet refernce design mea8 Micron 512MB NOR FLASH microprocessor bosch AC97
    Text: Freescale Semiconductor Users Manual MPC5200 Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. MPC5200UG


    Original     		PDF MPC5200 MPC5200UG PS3 computer motherboard circuit diagram Ps3 MOTHERBOARD CIRCUIT diagram gigabyte 865 MOTHERBOARD CIRCUIT diagram gigabyte 945 motherboard electrical diagram FX mode ethernet refernce design mea8 Micron 512MB NOR FLASH microprocessor bosch AC97

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Users Manual MPC5200 Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2005. All rights reserved. MPC5200UG


    Original     		PDF MPC5200 MPC5200UG 0x1308 0x1309 0x130C. 0x130D.

    M53216

    Abstract: 16Mx32-bit
    Text: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification


    OCR Scan     		PDF KMM53216004AK/AKG 16Mx4, 3216004A 16Mx32bits M53216004AK/A 53216004AK cycles/64ms 53216004AKG 1250mil) M53216 16Mx32-bit

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits