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    Part ECAD Model Manufacturer Description Download Buy
    MC2716M/BJA Rochester Electronics LLC 2716M - 2Kx8 EPROM - Dual marked (7802201JA) Visit Rochester Electronics LLC Buy
    MD2716M/B Rochester Electronics LLC Replacement for Intel part number MD2716M/B. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    M10162040108X0ISAR Renesas Electronics Corporation Non-Volatile 16Mb High Performance MRAM, 1.8V Visit Renesas Electronics Corporation
    M30162040108X0PWAR Renesas Electronics Corporation Non-Volatile 16Mb High Performance MRAM, 3.0V Visit Renesas Electronics Corporation
    M10162040054X0IWAR Renesas Electronics Corporation Non-Volatile 16Mb High Performance MRAM, 1.8V Visit Renesas Electronics Corporation
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    Cliff Electronic Components CP30216MB

    FT BLACK METAL SC SIMPLEX MM CSK
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    DigiKey CP30216MB Tray 25 1
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    Newark CP30216MB Bulk 6 1
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    OMRON Industrial Automation E2E-X16MB1T18-2M

    SENSOR INDUCT 16MM PNP M18 NO
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    DigiKey E2E-X16MB1T18-2M Box 24 1
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    Panduit Corp UTPCH16MBLY

    CABLE MOD 8P8C PLUG-PLUG 52.49'
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    DigiKey UTPCH16MBLY Bulk 15 1
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    Panduit Corp UTPCH16MBUY

    CABLE MOD 8P8C PLUG-PLUG 52.49'
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    DigiKey UTPCH16MBUY Bulk 15 1
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    Panduit Corp UTP28CH16MBL

    CABLE MOD 8P8C PLUG-PLUG 52.49'
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    DigiKey UTP28CH16MBL Bulk 15 1
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    16MB Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    16MB05W International Rectifier 16A Rectifier Bridges Scan PDF
    16MB1 Unknown Shortform Electronic Component Datasheets Short Form PDF
    16MB100W International Rectifier V(rrm): 1000V, 16A rectifier bridge Scan PDF
    16MB10W International Rectifier 16A Rectifier Bridges Scan PDF
    16MB120W International Rectifier V(rrm): 1200V, 16A rectifier bridge Scan PDF
    16MB20W International Rectifier 16A Rectifier Bridges Scan PDF
    16MB40W International Rectifier 16A Rectifier Bridges Scan PDF
    16MB60W International Rectifier 16A Rectifier Bridges Scan PDF
    16MB80W International Rectifier 16A Rectifier Bridges Scan PDF
    16MBZ1000M10x16 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ1000M8x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ1500M10x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ1800M10x23 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ470M8x11.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ680M10x12.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    16MBZ680M8x16 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF

    16MB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IS42VS16100E

    Abstract: 42VS16100E IS42VS16100E-75BLI
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI PDF

    16mb HIGH-SPEED ASYNCHRONOUS SRAM

    Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
    Text: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		IBM043616CHLBC IBM041816CHLBC 16mb HIGH-SPEED ASYNCHRONOUS SRAM IBM041816CHLBC IBM043616CHLBC SA37T PDF

    SA37T

    Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
    Text: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		IBM043616CBLBC IBM041816CBLBC SA37T cq 721 IBM041816CBLBC IBM043616CBLBC PDF

    SCANBE

    Abstract: SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604
    Text: MVME2300 TM VME Processor Modules ♦ PowerPC 603 or PowerPC 604™ 32-bit microprocessor ♦ L1 cache–16KB/16KB PowerPC 603 or 32KB/32KB PowerPC 604 ♦ 16MB to 128MB of on-board ECC DRAM ♦ Up to 1MB socketed Flash for on-board firmware or user-specified requirements


    Original     		MVME2300 603TM 604TM 32-bit 16KB/16KB 32KB/32KB 128MB 32/64-bit 64-bit 32-bit SCANBE SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604 PDF

    DELL inspiron power supply diagram

    Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
    Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for


    Original     		4MByte/96MByte/128MByte/160MByte/224MByte W7B6016M1XG-S128 W7B6016M1XG-S7 W7B6032M1XG-S128 W7B6032M1XG-S7 W7B6048M1XG-S128 W7B6048M1XG-S7 W7B6064M1XG-S128 W7B6064M1XG-S7 W7B6032M1XG-S256 DELL inspiron power supply diagram Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8 PDF

    MSC23832D

    Abstract: MSC23832D-60BS16
    Text: This version: Mar. 8. 1999 Semiconductor MSC23832D-xxBS16/DS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23832D-xxBS16/DS16 is a fully decoded, 8,388,608-word x 32-bit CMOS dynamic random access memory module composed of sixteen 16Mb DRAMs 4Mx4 in SOJ packages mounted with sixteen decoupling


    Original     		MSC23832D-xxBS16/DS16 608-word 32-bit MSC23832D-xxBS16/DS16 72-pin MSC23832D MSC23832D-60BS16 PDF

    TC17xx

    Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
    Text: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,


    Original     		M58BW M58BW016 M58BW032 FLNORAUT0405 TC17xx PQFP80 TC17X M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH PDF

    MR27V1652D

    Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
    Text: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8


    Original     		MR27V1652D 576-Word 16-Bit 152-Word 16-Word MR27V1652D 16Mbit 16bit DIP42-P-600-2 MR27V1652DMA MR27V1652DRA PDF

    MSM27V1655CZ

    Abstract: No abstract text available
    Text: ¡ Semiconductor 1A MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM DESCRIPTION The MSM27V1655CZ is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its


    Original     		MSM27V1655CZ 288-Double 32-Bit 576-Word 16-Bit 16-Bit MSM27V1655CZ 16Mbit 32bit PDF

    MSC23436C

    Abstract: No abstract text available
    Text: This version: Apr. 7. 1999 Semiconductor MSC23436C-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436C-xxBS10/DS10 is a 4,194,304-word x 36-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in SOJ packages and two 8Mb(4Mx2) DRAMs in SOJ packages


    Original     		MSC23436C-xxBS10/DS10 304-word 36-bit MSC23436C-xxBS10/DS10 72-pin MSC23436C PDF

    MSC2323258D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a


    Original     		MSC2323258D-xxBS4/DS4 152-word 32-bit MSC2323258D-xxBS4/DS4 72-pin MSC2323258D PDF

    LHF00L31

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LHF00L31 Flash Memory 16Mbit 1Mbitx16 (Model Number: LHF00L31) Spec. Issue Date: May 25, 2004 Spec No: FM045026 LHF00L31 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		LHF00L31 16Mbit 1Mbitx16) LHF00L31) FM045026 LHF00L31 PDF

    UT9Q512K32

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a


    Original     		UT9Q512K32E 68-lead UT9Q512K32 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs


    Original     		UT9Q512K32E 50krads 68-lead PDF

    IS42S16100F

    Abstract: No abstract text available
    Text: IS42S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM FEATURES • Clock frequency: IS42S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		IS42S16100F, IS42VS16100F IS42S16100F: IS42VS16100F: IS42S16100F PDF

    1MX16

    Abstract: CCIR601 CCIR656 PBGA388
    Text: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE


    Original     		64-BIT 66MHz 16Mbit 1MX16) 16-BIT 1MX16 CCIR601 CCIR656 PBGA388 PDF

    AxC11

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.


    OCR Scan     		DG3R58b 16Mbit bM27S25 AxC11 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7


    OCR Scan     		HYB39S16160CT-6/-7 16MBit PDF

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)


    OCR Scan     		IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb 29L0000 E36980 IBM0325404CT3A-260 29L6113 PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    DIP42-P-600-2

    Abstract: MR27V1602D
    Text: O K I Semiconductor MR27V1602D_ Preliminary 1A 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM_ DESCRIPTION The MR27V1602D is a 16Mbit electrically Program mable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27


    OCR Scan     		MR27V1602D 576-Word 16-Bit 152-Word 16Mbit 16bit V1602D MR27V1602 DIP42-P-600-2 PDF

    MSC23436D

    Abstract: No abstract text available
    Text: This version: Mar. 8.1999 O K I Semiconductor MSC23436D-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs 4Mx4 in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ


    OCR Scan     		MSC23436D-XXBS10/DS10 304-word 36-bit MSC23436D-xxBS10/DS10 72-pin MSC23436D PDF

    sm 0038 tsop

    Abstract: E-8BS16
    Text: MSC23S4641 E-8BS16 98.06.22 O K I Semiconductor M S C 2 3 S 4 6 4 1 E -8 B S 1 6 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641 E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynam ic random access memory com posed of sixteen 16Mb DRAMs(2Mx8) in TSOP


    OCR Scan     		MSC23S4641 E-8BS16 E-8BS16 64bit 168-pin 64-Bit sm 0038 tsop PDF