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    15MAR2002 Search Results

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    SA11

    Abstract: SA11A SA12 SA12A SA13 SA13A SA10 SA10A
    Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SA SERIES REVERSE VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 500 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability


    Original     		PDF DO-15 temperatureA150C SA150A SA150CA SA160 SA160C SA160A SA160CA SA170 SA11 SA11A SA12 SA12A SA13 SA13A SA10 SA10A

    marking BFP

    Abstract: KSIC02 BGY 58 GEW 108 marking BFM gfm 58
    Text: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic


    Original     		PDF deJ150C SMCJ150CA SMCJ160C SMCJ160CA SMCJ170C SMCJ170CA marking BFP KSIC02 BGY 58 GEW 108 marking BFM gfm 58

    VDR 0047

    Abstract: M68AW512M TSOP44
    Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW512M TSOP44 VDR 0047 M68AW512M

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    m68aw512

    Abstract: No abstract text available
    Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW512M TSOP44 m68aw512

    5KP10

    Abstract: 5KP100 5KP10A 5KP11 5KP110 5KP11A 5KP12 5KP12A 5KP180
    Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability


    Original     		PDF 5KP120 5KP120C 5KP150 5KP150C 5KP180 5KP180C 5KP100, 300us 5KP110 5KP180, 5KP10 5KP100 5KP10A 5KP11 5KP11A 5KP12 5KP12A 5KP180

    P4KE10

    Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE200A P4KE220 P4KE400A
    Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P4KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 400 WATTS DO-41 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability


    Original     		PDF DO-41 P4KE400C P4KE400A P4KE400CA P4KE440 P4KE440C P4KE440A P4KE440CA P4KE200A, P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE200A P4KE220 P4KE400A

    8802H

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz TFBGA56 8802H

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    A0-A21

    Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 A0-A21 CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56

    VDR 0047

    Abstract: M68AW512M TSOP44
    Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW512M TSOP44 VDR 0047 M68AW512M

    Untitled

    Abstract: No abstract text available
    Text: M68AW512ML 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW512ML TSOP44

    M58CR064C

    Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56 M58CR064C A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56

    TSOP44 Package

    Abstract: TSOP44 VDR 0047 M68AW512ML
    Text: M68AW512ML 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW512ML TSOP44 TSOP44 Package VDR 0047 M68AW512ML

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST HC 00 REVISIONS LTR DESCRIPTION DATE RELEASE PER 0S1 4 - 0 1 0 8 - 0 4 DWN APVD D Cam 3 /2 2 /0 4 NOTES: 1, D 2, D E S I GN E D FDR US E WITH ,141 S E M I - R I G I D


    OCR Scan     		PDF RG402/U) 11Nov200Z 31MAR2000 15MAR2002 AMp50225