SA11
Abstract: SA11A SA12 SA12A SA13 SA13A SA10 SA10A
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SA SERIES REVERSE VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 500 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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DO-15
temperatureA150C
SA150A
SA150CA
SA160
SA160C
SA160A
SA160CA
SA170
SA11
SA11A
SA12
SA12A
SA13
SA13A
SA10
SA10A
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marking BFP
Abstract: KSIC02 BGY 58 GEW 108 marking BFM gfm 58
Text: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic
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deJ150C
SMCJ150CA
SMCJ160C
SMCJ160CA
SMCJ170C
SMCJ170CA
marking BFP
KSIC02
BGY 58
GEW 108
marking BFM
gfm 58
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VDR 0047
Abstract: M68AW512M TSOP44
Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW512M
TSOP44
VDR 0047
M68AW512M
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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m68aw512
Abstract: No abstract text available
Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V
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M68AW512M
TSOP44
m68aw512
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5KP10
Abstract: 5KP100 5KP10A 5KP11 5KP110 5KP11A 5KP12 5KP12A 5KP180
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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5KP120
5KP120C
5KP150
5KP150C
5KP180
5KP180C
5KP100,
300us
5KP110
5KP180,
5KP10
5KP100
5KP10A
5KP11
5KP11A
5KP12
5KP12A
5KP180
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P4KE10
Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE200A P4KE220 P4KE400A
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P4KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 400 WATTS DO-41 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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DO-41
P4KE400C
P4KE400A
P4KE400CA
P4KE440
P4KE440C
P4KE440A
P4KE440CA
P4KE200A,
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE200A
P4KE220
P4KE400A
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8802H
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
TFBGA56
8802H
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Untitled
Abstract: No abstract text available
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
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A0-A21
Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
A0-A21
CR10
M58CR064C
M58CR064D
M58CR064P
M58CR064Q
TFBGA56
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VDR 0047
Abstract: M68AW512M TSOP44
Text: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V
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M68AW512M
TSOP44
VDR 0047
M68AW512M
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Untitled
Abstract: No abstract text available
Text: M68AW512ML 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW512ML
TSOP44
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M58CR064C
Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58CR064C,
M58CR064D
M58CR064P,
M58CR064Q
54MHz
120ns
TFBGA56
M58CR064C
A0-A21
CR10
M58CR064D
M58CR064P
M58CR064Q
TFBGA56
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TSOP44 Package
Abstract: TSOP44 VDR 0047 M68AW512ML
Text: M68AW512ML 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW512ML
TSOP44
TSOP44 Package
VDR 0047
M68AW512ML
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST HC 00 REVISIONS LTR DESCRIPTION DATE RELEASE PER 0S1 4 - 0 1 0 8 - 0 4 DWN APVD D Cam 3 /2 2 /0 4 NOTES: 1, D 2, D E S I GN E D FDR US E WITH ,141 S E M I - R I G I D
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RG402/U)
11Nov200Z
31MAR2000
15MAR2002
AMp50225
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