sot-23 1Yd
Abstract: No abstract text available
Text: M8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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M8550LT1
OT-23
15-Jul-10
80mAdc)
sot-23 1Yd
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Untitled
Abstract: No abstract text available
Text: AC05 Safety AC05.CS www.vishay.com Vishay Draloric Axial Cemented Fusible Wirewound Safety Resistor FEATURES • UL1412 recognised fusible wirewound resistor; UL file no. E362452 • Surge voltage handling capability: 4 kV (10 to 20 ) and 6 kV (22 to 100 ) as per
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UL1412
E362452
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
AEC-Q101
VT4060C
2002/95/EC
2002/96/EC
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ILD207T equivalent
Abstract: ILD213T
Text: ILD205T, ILD206T, ILD207T, ILD211T, ILD213T www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package FEATURES A1 8C • Two channel coupler C2 7E • SOIC-8 surface mountable package A3 6C • Standard lead spacing of 0.05"
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ILD205T,
ILD206T,
ILD207T,
ILD211T,
ILD213T
i179018-2
i179025
ILD207T equivalent
ILD213T
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Untitled
Abstract: No abstract text available
Text: T1677P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.28 • Radiant sensitive area (in mm2): 0.27 • Peak sensitivity wavelength: 570 nm
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T1677P
T1677P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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100-10L
Abstract: No abstract text available
Text: IHLP-1616BZ-01 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite
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IHLP-1616BZ-01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
100-10L
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E24 Series
Abstract: 25x168 H5815
Text: RSSD Vishay Sfernice Adjustable Wirewound Vitreous Resistors Low Ohmic Values 0.10 available FEATURES • CS collars High power rating: 16 W to 600 W at 25 °C Heavy overloads 10 Pn 15 s 1 % Low ohmic values 0.10 available
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2002/95/EC
11-Mar-11
E24 Series
25x168
H5815
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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Untitled
Abstract: No abstract text available
Text: New Product VFT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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VFT4060C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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cdr01
Abstract: CDR32BP CDR-MIL-PRF-55681
Text: CDR-MIL-PRF-55681 Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR FEATURES • Military qualified products • Federal stock control number, CAGE CODE SHV71 • High reliability tested per MIL-PRF-55681 • Tin/lead termination codes “Z” and “U”
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CDR-MIL-PRF-55681
SHV71
MIL-PRF-55681
2002/95/EC
18-Jul-08
cdr01
CDR32BP
CDR-MIL-PRF-55681
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR820DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7141DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7141DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR818DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR818DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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E24 Series
Abstract: sd370 rwST
Text: RSSD Vishay Sfernice Adjustable Wirewound Vitreous Resistors Low Ohmic Values 0.10 available FEATURES • CS collars High power rating: 16 W to 600 W at 25 °C Heavy overloads 10 Pn 15 s 1 % Low ohmic values 0.10 available
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
E24 Series
sd370
rwST
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Untitled
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
VT4060C
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Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
VT30L60C
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Untitled
Abstract: No abstract text available
Text: New Product VFT30L60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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VFT30L60C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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VIT4060C-M3
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
VT4060C
VIT4060C-M3
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LS1240A
Abstract: st ls1240 LS1240 5.1 circuit diagram schematics E-LS1240A JESD97 LS1240AD1
Text: LS1240 Electronic two-tone ringer Features • Low current consumption, in order to allow the parallel operation of 4 devices ■ Integrated rectifier bridge with zener diodes to protect against over voltages little external circuitry ■ Tone and switching frequencies adjustable by
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LS1240
LS1240
LS1240,
LS1240A
st ls1240
5.1 circuit diagram schematics
E-LS1240A
JESD97
LS1240AD1
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Untitled
Abstract: No abstract text available
Text: T1172P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 1.47 x 1.07 x 0.28 • Radiant sensitive area (in mm2): 1.06 • Peak sensitivity wavelength: 960 nm
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T1172P
T1172P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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Original
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PDF
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
AEC-Q101
VT30L60C
2002/95/EC
2002/96/EC
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Untitled
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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PDF
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
AEC-Q101
VT4060C
2002/95/EC
2002/96/EC
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Untitled
Abstract: No abstract text available
Text: VESD05A8C-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L FEATURES 1 • Ultra compact LLP1713-9L package 8 9 2 7 3 6 4 5 • Low package profile < 0.6 mm • 8-line ESD-protection • Low leakage current IR < 1 A • Low load capacitance CD = 10 pF
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VESD05A8C-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
VESD05A8C-HNH
VESD05A8C-HNH-GS08
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION LOC CM ALL RIGHTS RESERVED. By - REVISIONS D IS T 00 LTR DESCRIPTION REVISED PER DATE DWN HMR SM 15JUL1 1 ECO-11-013373 APVD D D C C TYP [.5 2 0 ] L L B MATERIAL: Û CON N ECTOR-NYLON U L 9 4 V - 2 WHITE .
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OCR Scan
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ECO-11-013373
15JUL1
--DEC--2004
--DEC--2004
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