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    159B Search Results

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    159B Price and Stock

    KEMET Corporation C0603C159B8HACTU

    CAP CER 1.5PF 10V X8R 0603
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    DigiKey C0603C159B8HACTU Digi-Reel 35,610 1
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    C0603C159B8HACTU Cut Tape 35,610 1
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    C0603C159B8HACTU Reel 32,000 4,000
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    Mouser Electronics C0603C159B8HACTU 20,935
    • 1 $0.1
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    • 1000 $0.017
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    KEMET Corporation CBR04C159B5GAC

    CAP CER 1.5PF 50V C0G/NP0 0402
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    DigiKey CBR04C159B5GAC Cut Tape 30,062 1
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    CBR04C159B5GAC Reel 20,000 10,000
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    Avnet Abacus CBR04C159B5GAC Reel 28 Weeks 20,000
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    KEMET Corporation CBR02C159B3GAC

    CAP CER 1.5PF 25V C0G/NP0 0201
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    DigiKey CBR02C159B3GAC Reel 15,000 15,000
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    Mouser Electronics CBR02C159B3GAC 2,450
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    Avnet Abacus CBR02C159B3GAC Reel 25 Weeks 15,000
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    KEMET Corporation CBR04C159B2GAC

    CAP CER 1.5PF 200V C0G/NP0 0402
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    DigiKey CBR04C159B2GAC Cut Tape 6,520 1
    • 1 $0.63
    • 10 $0.383
    • 100 $0.2506
    • 1000 $0.18058
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    CBR04C159B2GAC Digi-Reel 6,520 1
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    Newark CBR04C159B2GAC Bulk 10,000 10,000
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    Chip 1 Exchange CBR04C159B2GAC 13,000
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    Avnet Abacus CBR04C159B2GAC Reel 28 Weeks 10,000
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    Vishay Dale M32159B07MS3

    RES SMD 0 OHM JUMPER 1/4W 1206
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    DigiKey M32159B07MS3 Cut Tape 4,370 1
    • 1 $2.57
    • 10 $1.515
    • 100 $0.9431
    • 1000 $0.70408
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    M32159B07MS3 Digi-Reel 4,370 1
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    • 10 $1.515
    • 100 $0.9431
    • 1000 $0.70408
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    M32159B07MS3 Reel 4,000 1,000
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    159B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    159B Advani-Oerlikon Silicon Transistor Guide Scan PDF

    159B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HRW36

    Abstract: Silicon Schottky Barrier Diode Hitachi DSA00125
    Text: ADE-208-159B Z HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 2 Nov. 1994 Features Pin Arrangement • Low forward voltage drop. (VF =0.80V max) • High reverse voltage. (VR =90V max) 1 2 3 Ordering Information Type No. Laser Mark


    Original     		ADE-208-159B HRW36 O-220AB SC-46 HRW36 Silicon Schottky Barrier Diode Hitachi DSA00125 PDF

    HRW36

    Abstract: Hitachi DSA001653 lot code
    Text: HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-159B Z Rev. 2 Nov. 1994 Features • Low forward voltage drop. (VF = 0.80V max) • High reverse voltage. (VR = 90V max) Ordering Information Type No. Laser Mark Package Code HRW36


    Original     		HRW36 ADE-208-159B O-220AB HRW36 Hitachi DSA001653 lot code PDF

    32176 Group PWM CODE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		REJ09B0067-0110 Appendix4-30 REJ09B0067-0110 32176 Group PWM CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 1 1 1 1  8!"F6#8B7"F7$1 1 5 5 4 4 4 4 4 4 4 4 567689AA745BC5B4DEFA4EA844 A761446444 4 !"7#4$%&21&'4 7"744 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5*4 !!E+A764 !5 5 ""235#FE$%57$CD&5'(ED53355


    Original     		1234567894A48BC77AD8E7A418F 567689AA745BC5B4DEFA A7614 BAD555 5556B* 12345678942A3B529CDEFA A1224 E87A9CA EFA84A B578EA72FA5E PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX 256K72 100MHz 133MHz 150MHz 166MHz 200MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		REJ09B0123-0110 REJ09B0123-0110 PDF

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42 PDF

    PP3V42G3H

    Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
    Text: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		ITP700FLEX PP3V42G3H temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700 PDF

    ar9350

    Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06


    Original     		ITP700FLEX ar9350 Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT PDF

    recloser

    Abstract: sgm switch power cable fault locator decay method lon gateway LA 4303
    Text: 3URWHFW,7 /LQH GLVWDQFH SURWHFWLRQ WHUPLQDO 5 /   1MRK 506 159-BEN Page 1 Revision: A Issued: October 2003 Data subject to change without notice HDWXUHV • Open terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements


    Original     		159-BEN 162-UEN 163-UEN 009-BEN 112-BEN SE-721 recloser sgm switch power cable fault locator decay method lon gateway LA 4303 PDF

    LFSR COUNTER

    Abstract: 8 bit LFSR LFSR 74 XOR GATE 32-bit shift register math polynomials XNOR GATE application XNOR FAIRCHILD 127-bit XNOR three inputs
    Text: APPLICATION NOTE Efficient Shift Registers, LFSR Counters, and Long PseudoRandom Sequence Generators  XAPP 052 July 7,1996 Version 1.1 Application Note by Peter Alfke Summary Shift registers longer than eight bits can be implemented most efficiently in XC4000E Select-RAMTM. Using Linear Feedback


    Original     		XC4000E 32-bit 100-bit LFSR COUNTER 8 bit LFSR LFSR 74 XOR GATE 32-bit shift register math polynomials XNOR GATE application XNOR FAIRCHILD 127-bit XNOR three inputs PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX PDF

    2C66

    Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
    Text: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and


    Original     		-195CU/139B -3-195C JAN-2N1119 Re1iabi11t7 Aforceof80z. 4Ths-19500/139B 30nsec) 2C66 ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G PDF

    k3155

    Abstract: MCR68-3 DT28
    Text: M13X Device DS3/DS1 MUX/DEMUX, Enhanced Features TXC-03305 FEATURES DESCRIPTION • The The M13X M13X CMOS CMOS VLSI VLSI device device provides provides the the functions functions needed needed to to multiplex multiplex and and demultiplex demultiplex 28


    Original     		TXC-03305 TXC-03305-MB k3155 MCR68-3 DT28 PDF

    LFSR COUNTER

    Abstract: 1969 fairchild X5801 XC3000 XC4000 XC4000E XC4010E 145146 74 XOR GATE math polynomials
    Text: Efficient Shift Registers, LFSR Counters, and Long PseudoRandom Sequence Generators  August 1995 Application Note By PETER ALFKE Summary Shift registers longer than eight bits can be implemented most efficiently in XC4000E RAM. Using Linear Feedback Shift-Register LFSR counters to address the RAM makes the design even simpler. This application note describes


    Original     		XC4000E 32-bit 100-bit 001xxx-xx LFSR COUNTER 1969 fairchild X5801 XC3000 XC4000 XC4010E 145146 74 XOR GATE math polynomials PDF

    dq35j

    Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
    Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX dq35j CS11 CS21 CS22 PDF

    contactless

    Abstract: ST92163MCU 159b ST16-19RFRDCS910 ST92163
    Text: ST16-19RFRDCS910 CONTACTLESS READER CHIP SET With ST92163MCU DATA BRIEFING FUNCTION: ANALOG FRONT END FOR CONTACTLESS SMARTCARD READER • GENERAL DESCRIPTION – This is an analog front end dedicated to contactless Smartcards reader chip set. – This interface complies with ISO 14443-2 Type


    Original     		ST16-19RFRDCS910 ST92163MCU RS232 ST92163 159b/PRZ contactless ST92163MCU 159b ST16-19RFRDCS910 ST92163 PDF

    SLP-271D

    Abstract: SLP171D SLP-471D SLP-274B SLP978C
    Text: ;SANYO SEMICONDUCTOR CORP >E I 7997076 SANYO SEMICONDUCTOR CORP LED O e « « Type No. - m % « SLP-159B SLP-259B SLP-459B SLP-171D SLP-271D SLP-471D SLP-173B-01 SLP-273B-01 SLP-473B01 SLP-174B SLP-274B SLP-474B SLP-175B SLP-275B SLP-475B SLP-178C SLP-278C


    OCR Scan     		SLP-159B SLP-259B SLP-459B SLP-171D SLP-271D SLP-471D SLP-173B-01 SLP-273B-01 SLP-473B01 SLP-174B SLP171D SLP-274B SLP978C PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-159B Z HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 2 Nov. 1994 Pin Arrangement • Low forward voltage drop. (VF =0.80V max) • High reverse voltage. (VR=90V max) Ì 1 2 3 Ordering Information Type No.


    OCR Scan     		HRW36 ADE-208-159B HRW36 O-220AB 10msec O-220AB SC-46 PDF

    SS 1603

    Abstract: FU-68SDF-V802M103B FU-68SDF-V802M104B FU-68SDF-V802M105B FU-68SDF-V802M106B FU-68SDF-V802M139B FU-68SDF-V802M140B FU-68SDF-V802M141B FU-68SDF-V802M142B FU-68SDF-V802M175B
    Text: TENTATIVE MITSUBISHI OPTICAL DEVICES FU-68SDF-V802MxxxB 1.58 (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) DESCRIPTION M odule type FU-68SDF-V802M xxB is a 1.5£|a,m (L-Band) DFB-LD module with single-m ode optical


    OCR Scan     		FU-68SDF-V802MxxxB FU-68SDF-V802MxxB -V802M171B FU-68SDF-V802M207B FU-68SDF-V802M136B FU-68SDF-V802M172B FU-68SDF-V802M208B FU-68SDF-V802M137B FU-68SDF-V802M173B FU-68SDF-V802M209B SS 1603 FU-68SDF-V802M103B FU-68SDF-V802M104B FU-68SDF-V802M105B FU-68SDF-V802M106B FU-68SDF-V802M139B FU-68SDF-V802M140B FU-68SDF-V802M141B FU-68SDF-V802M142B FU-68SDF-V802M175B PDF

    phototransistor OCP71

    Abstract: OCP71 GTE175M GD150M gsa10 dekatron GC10D ScansU9X23 DIGITRON GR10A
    Text: 141 C IR C U IT S Dekatron Circuits The recommended Dekatron drive and coupling circuits are given in the following pages together with a number of suitable pulse shaping circuits. Although in the majority of cases the Dekatron counter symbol has been used, the drive circuits are equally applic­


    OCR Scan     		470pF CT-14 phototransistor OCP71 OCP71 GTE175M GD150M gsa10 dekatron GC10D ScansU9X23 DIGITRON GR10A PDF

    dma controller chip

    Abstract: No abstract text available
    Text: in tj, 82374EB EISA SYSTEM COMPONENT ESC • Integrates EISA Compatible Bus Controller — Translates Cycles between EISA and ISA Bus — Supports EISA Burst and Standard Cycles — Supports ISA No Wait State Cycles — Supports Byte Assembly/ Disassembly for 8-, 16- and 32-Bit


    OCR Scan     		82374EB 32-Bit 82C37A dma controller chip PDF

    T 1S98

    Abstract: 38510/159 FCT ckt HPF 505 1N3064
    Text: MIL-M-38510/1593 1QUÀLÏrICATI ON 21 JULY 1986 I REQUIREMENTS I REMOVED SUPERSEDING MIL-M-38510/159A 11 June 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, SHIFT REGISTERS, MONOLITHIC SILICON 1NACIIVli FOR HEWDLSISH AFTER' BATE dF THIS REvtSl6N.~|


    OCR Scan     		MIL-M-38510/1593 MIL-M-38510/159A MIL-M-38510, T 1S98 38510/159 FCT ckt HPF 505 1N3064 PDF