150N Search Results

150N Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
F1150NBGI8		Renesas Electronics Corporation	Dual RF to IF Downconverting Mixer
R2A20150NP#W5		Renesas Electronics Corporation	Converters

150N Price and Stock

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Diotec Semiconductor AG DI150N04PQ MOSFET PWRQFN 5X6 40V 0.0014OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DI150N04PQ	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.76088	Buy Now
Flip Electronics FCH150N65F-F155 MOSFET N-CH 650V 24A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCH150N65F-F155	Tube	3,261		200	1 - 10 - 100 - 1000 $2.64 10000 $2.64	Buy Now
Rochester Electronics LLC FCH150N65F-F155 MOSFET N-CH 650V 24A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCH150N65F-F155	Bulk	3,207		79	1 - 10 - 100 $3.82 1000 $3.82 10000 $3.82	Buy Now
onsemi FDI150N10 MOSFET N-CH 100V 57A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDI150N10	Tube	3,088		1	1 $2.84 10 $2.84 100 $1.8783 1000 $1.34853 10000 $1.23294	Buy Now
Richardson RFPD	FDI150N10				800	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
onsemi FDBL0150N80 MOSFET N-CH 80V 300A 8HPSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDBL0150N80	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.39278	Buy Now
	FDBL0150N80	Cut Tape	1,386		1	1 $4.92 10 $4.127 100 $3.3388 1000 $2.54117 10000 $2.54117	Buy Now
Avnet Americas	FDBL0150N80	Reel		13 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $2.5711	Buy Now
Rochester Electronics	FDBL0150N80		1,465		1	1 $2.68 10 $2.68 100 $2.52 1000 $2.28 10000 $2.28	Buy Now
Richardson RFPD	FDBL0150N80				2,000	1 - 10 - 100 - 1000 - 10000 $2.3	Buy Now
Avnet Asia	FDBL0150N80			66 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 150N price and stock on Findchips.com

150N Datasheets (25)

Part	Manufacturer	Description	Type	PDF
150NC15	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
150NC15	Toshiba	Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs	Scan	PDF
150NC15	Toshiba	150A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier	Scan	PDF
150ND11	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
150ND11	Toshiba	150A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier	Scan	PDF
150ND11	Toshiba	Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs	Scan	PDF
150ND13	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
150NS10	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS100	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS120	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS140	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS160	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS20	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS40	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF

150NS60	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NS80	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NSR10	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NSR100	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NSR120	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF
150NSR140	Naina Semiconductor	Rectifier Diode, Standard Rectifier Diode, Current IF=150A	Original	PDF

150N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
X28LV010 Abstract: No abstract text available Text: X28LV010 1M 128K x 8 Bit 3.3 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 70, 90, 120, 150ns • Simple Byte and Page Write —Single 3.3V±10% supply —No external high voltages or VPP control circuits —Self-timed • no erase before write	Original	PDF	X28LV010 150ns X28LV010
150N15 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 150N15
BS62UV256 Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns	Original	PDF	BS62UV256 150ns 100ns BS62UV25rature R0201-BS62UV256 BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
IXXH100N60B3 Abstract: 100n60 Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ	Original	PDF	IXXH100N60B3 IC110 150ns O-247 100N60B3 0-10-A IXXH100N60B3 100n60
Untitled Abstract: No abstract text available Text: IECQ-CECC and MIL grade ranges IECQ-CECC and MIL grade ranges Maximum capacitance values. 1812 2220 2225 33nF 100nF 150nF 220nF X7R 100nF 330nF 1.0µF 1.5µF 1.5µF 3.3µF 5.6µF 6.8µF C0G/NP0 1.0nF 4.7nF 15nF 22nF 27nF 68nF 100nF 150nF X7R 56nF 220nF 820nF	Original	PDF	100nF 150nF 220nF 330nF 820nF 470pF
Untitled Abstract: No abstract text available Text: S02A and S05 Space ranges S02A and S05 Space ranges Capacitance values. 1pF - 22nF 10pF - 33nF 220pF - 100nF 470pF - 150nF 560pF - 220nF 330pF - 100nF 100pF - 330nF 680pF - 1.0µF 1.0nF - 1.5µF 25V C0G/NP0 390pF - 1.0nF X7R 1pF - 4.7nF 1pF - 15nF 2225 1pF - 6.8nF	Original	PDF	220pF 100nF 470pF 150nF 560pF 220nF 330pF 100pF 330nF
MAX4182 Abstract: No abstract text available Text: * MAX4182 LARGE-SIGNAL RESPONSE AVCL=+2 * 4181LTRA.CIR XAR1 3 4 5 2 1 MAX4182 * +IN -IN VCC VEE OUT VCC 5 0 5V VEE 2 0 -5V VIN 3 0 PULSE -1V 1V 20ns 4N 4N 50nS 100ns RF 1 4 2.4K R1 4 0 2.4k RL 1 0 1K .OPTIONS RELTOL=.01 .TRAN 1nS 150nS .PROBE .LIB MAX4182.FAM	Original	PDF	MAX4182 4181LTRA MAX4182 100ns) 150nS
100N Abstract: 150N MAX961 Text: * MAX961 Comparator Latch test circuit. * 961LATCH.CIR XAR1 3 2 7 4 352 300 433 483 MAX961 * +in -in v+ v- le gnd qout qoutcomp VP 7 0 5V VN 4 0 0V VIN 3 0 PULSE 0V 2.5V 100N 1N 1N 100N ;Input generator VLE 352 0 PULSE(0V 5V 150N 1N 1N 5000N) vbias 2 0 1V	Original	PDF	MAX961 961LATCH MAX961 5000N) 100N 150N
HT23C010 Abstract: No abstract text available Text: HT23C010 CMOS 128K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)	Original	PDF	HT23C010 150ns 250ns 28-pin 32-pin HT23C010
HT23C128 Abstract: No abstract text available Text: HT23C128 CMOS 16K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)	Original	PDF	HT23C128 150ns 250ns 28-pin HT23C128
Untitled Abstract: No abstract text available Text: UM23V8001 1,048,576 X 8 BIT WIDE VOLTAGE RANGE CMOS MASK ROM Features • 1,048,576 x 8 bit organization ■ Wide power supply range: + 2.7V to +5.5V ■ Access times: 150ns m ax. /VCC = 5V 250ns (m ax.)/VCC = 3V ■ Current: Operating: 50mA (m ax.)/VCC = 5V	OCR Scan	PDF	UM23V8001 150ns 250ns 32-pin UM23V8001 100pF UM23V8001M
TMM24256P Abstract: AF150 TC54256P TTL af tc54256ap Text: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access	OCR Scan	PDF	TC54256AP/AF-150 TC54256AP/AF 150ns TC57256AD 30mA/6 150ns TC54256AP TMM24256P AF150 TC54256P TTL af
ta25 du14 Abstract: No abstract text available Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: R A C C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits	OCR Scan	PDF	ST1641OOOAG1 144-PIN STI641000AG1 44-pin -60LVG ta25 du14
jeida+dram+88+pin Abstract: jeida 88 pin jeida dram 88 pin Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology	OCR Scan	PDF	STI321000C1 STI321000C1-60Vx STI32100OC1-7OVx STI321000C1-80Vx 110ns 130ns 150ns 88-PIN jeida+dram+88+pin jeida 88 pin jeida dram 88 pin

Untitled Abstract: No abstract text available Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic	OCR Scan	PDF	STI338000 STI338000-60 STI338000-70 STI338000-80 110ns 130ns 150ns 72-PIN STI338000
Untitled Abstract: No abstract text available Text: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic	OCR Scan	PDF	STI32256 STI32256-60 STI32 STI32256-80 110ns 130ns 150ns 72-PIN STI32256
EXEL MICROELECTRONICS Abstract: XLS48C64-200 XLS48C64-250 XLS48C64C-150 Text: XL48C64 M IC R O E L E C T R O N IC S . IN C FEATURES • ■ ■ ■ ■ ■ ■ ■ 8192 x 8 Bit E2PRO M Single 5-Volt Supply Fast Data Access: 150ns Low Power Requirements: - 100/u.a Standby - 100/u.a Quiescent Automatic Write Cycle Time-out Foolproof False Write	OCR Scan	PDF	XL48C64 150ns 100/u XL48C64 21002C/ EXEL MICROELECTRONICS XLS48C64-200 XLS48C64-250 XLS48C64C-150
82S185 Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185 Text: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector	OCR Scan	PDF	82S184-I 82S185-I 82S184 82S185 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
3A73 Abstract: No abstract text available Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at	OCR Scan	PDF	TC531024P/F 120ns 150ns, 600mil 40pin 525mil 3A73
hm62256 Abstract: No abstract text available Text: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)	OCR Scan	PDF	HM62256 32768-word 85/100/120/150ns 200/iW /10/LiW 2256P
Untitled Abstract: No abstract text available Text: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA	OCR Scan	PDF	D200LC40B 150ns J533-1)
6264alp Abstract: 6264ALSP-10 Text: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •	OCR Scan	PDF	HM6264A 8192-word 10/LtW 15mW/MHz 100ns/120rts/150ns DP-28) HM6264ASP 6264AP-10 HM6264AP-12 HM6264AP-15 6264alp 6264ALSP-10
2SK868 Abstract: 2SK868A SC-65 C1624 Text: P o w e r F-MOS FET 2SK868, 2SK 868A 2 S K 8 6 8 , 2S K 8 6 8 A Silicon N-channel Power F-M O S FET P ackage Dim ensions • Features • Low ON resistance R d s on : R d s (on) = 0 .2 fl (typ.) • High switching rate : tf= 150ns (typ.) • No secondary breakdown	OCR Scan	PDF	2SK868, 2SK868A 150ns 2SK868 2SK868A SC-65 C1624
HM472114AP-2 Abstract: HM472114A HM472114A-2 2114L HM472114A-1 HM472114AP-1 HM472114AP2 Text: H M 472114A -1 ,H M 4 7 2 1 1 4 A -2 , H M 472114A P-1 ,H M 4 7 2 1 1 4 A P -2 1 0 2 4 -word X 4 - bit Static Random Access M em ory Fast Access T i m e . H M 4 72 114 A -1 150ns max. H M 4 7 2 1 1 4 A -2 200ns (m ax.)	OCR Scan	PDF	HM472114A-1 HM472114A-2, HM472114AP-1 HM472114AP-2 1024-word HM472114A-1 150ns HM472114A-2 200ns 200mW HM472114AP-2 HM472114A 2114L HM472114AP-1 HM472114AP2

150N Search Results

150N Result Highlights (2)

150N Price and Stock

Diotec Semiconductor AG DI150N04PQ

Flip Electronics FCH150N65F-F155

Rochester Electronics LLC FCH150N65F-F155

onsemi FDI150N10

onsemi FDBL0150N80

150N Datasheets (25)

150N Datasheets Context Search

X28LV010

150N15

BS62UV256

IXXH100N60B3

Untitled

Untitled

MAX4182

100N

HT23C010

HT23C128

Untitled

TMM24256P

ta25 du14

jeida+dram+88+pin

Untitled

Untitled

EXEL MICROELECTRONICS

82S185

3A73

hm62256

Untitled

6264alp

2SK868

HM472114AP-2