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    150 AMP TRANSISTORS Search Results

    150 AMP TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    150 AMP TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADA4850-1

    Abstract: ADA4850-2 MO-220-VEED-2 Differential Video Amplifier
    Text: High Speed, Rail-to-Rail Output, Op Amp with Ultralow Power-Down ADA4850-1/ADA4850-2 PIN CONFIGURATIONS Ultralow power-down current: 150 nA/amp max Low quiescent current: 2.4 mA/amp High speed 175 MHz −3 dB bandwidth 220 V/µs slew rate 85 ns settling time to 0.1%


    Original     		PDF ADA4850-1/ADA4850-2 ADA4850-1 ADA4850-2 16-Lead CP-16-3 ADA4850-1 ADA4850-2 MO-220-VEED-2 Differential Video Amplifier

    2N1202

    Abstract: 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A
    Text: germanium power transistors 143 PNP ALLOY TRANSISTORS 3.5-5 Amp NORMALIZED CURRENT GAIN 200 - ,- . . 175 .!. ~ w ~ 150 ~ z. ;( 125 C) ~ Z ~ 100 GI: ~ - VCEo-2V ~ u 75 50 o -Q5 -1.0 -1.5 -. -3.0 -2.5 -2.0 COLLECTOR CURRENT, IC (AMPS)


    Original     		PDF MIL-S-19500/3SB MIL-S-19500/3SB 8-32NC-2A 2N1202 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A

    2N1552

    Abstract: Germanium power 2N1559a 2N1560 2N1555
    Text: germanium. power transistors 150 T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 10.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER V eB 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1031B 2N1031C 2N1032 2N1032A 2N1032B 2N1032C 2N1120


    Original     		PDF 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1552 Germanium power 2N1559a 2N1560 2N1555

    ZTX654

    Abstract: ZTX655 DSA003771
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10


    Original     		PDF ZTX654 ZTX655 500mA, 200mA* 20MHz ZTX654 ZTX655 DSA003771

    ZTX654

    Abstract: No abstract text available
    Text: ZTX654 Not Recommended for New Design Please Use ZTX655 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain %


    Original     		PDF ZTX654 ZTX655 ZTX655 IC/10 100ms

    LTVW

    Abstract: BPW21 application note BPW21 SFH213FA Amplifier c4 F3141 si quad PHOTodiode G02A LT1880 Q581
    Text: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150µV and


    Original     		PDF LT1880 OT-23, OT-23 900pA 13nV/Hz MMBT3904 SFH213FA 100kHz, LT1782 LTVW BPW21 application note BPW21 Amplifier c4 F3141 si quad PHOTodiode G02A LT1880 Q581

    Untitled

    Abstract: No abstract text available
    Text: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp DESCRIPTION FEATURES n n n n n n n n n n n The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150 V and


    Original     		PDF LT1880 OT-23, OT-23 900pA 900pA 13nV/â 100kHz, LT1782 LT1792

    LTVW

    Abstract: bpw21 op BPW21 resistor parasitic capacitance LT1880 LTVW MARKING siemens thermocouple 2N5486 LT1806 LT1880CS5
    Text: Final Electrical Specifications LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150µV and


    Original     		PDF LT1880 OT-23, OT-23 900pA LT1782 LT1792 LT1881/LT1882 200pA LTVW bpw21 op BPW21 resistor parasitic capacitance LT1880 LTVW MARKING siemens thermocouple 2N5486 LT1806 LT1880CS5

    PMD20K200

    Abstract: 1N4435 20K150 20K120 20K200
    Text: A LAMBDA SWITCHING POWER DARLINGTONS PMD 20K SERIES 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PA RA M ET ER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 150°C • Guaranteed and 100% tested for lSB


    OCR Scan     		PDF

    80 amp 30v npn darlington

    Abstract: No abstract text available
    Text: SENTECH CORP 5Ö E D • fllB’ilB'i D O D B E T S Süß 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 150°C • Guaranteed and 100% tested for lSB


    OCR Scan     		PDF 25K120 25K150 25K200 DD32c 80 amp 30v npn darlington

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


    OCR Scan     		PDF 2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

    PM 3000

    Abstract: PM26K380 PM-26K-380 PM29K380 PM-29K-380 380 transistor pmd26k PM26K
    Text: % • Fast power switching at 150°C junction temperature PM-26K, PM-29K Switching transistors • -65°C to +150°C operating • Designed to switch 3 or 5 Amp at 20 KHz • 1-5 /jSec maximum turn off time • V0EQ 380V Vq b o 450V • Guaranteed secondary breakdown


    OCR Scan     		PDF PM-26K, PM-29K PM-26K-380 PM-29K-380 PM26K380 PM29K380 VCBo450V PM-26K PM-29K PM 3000 PM26K380 PM29K380 380 transistor pmd26k PM26K

    pmd10K80

    Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
    Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB


    OCR Scan     		PDF PMD10K, pmd10K80 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K

    25K120

    Abstract: 80 amp 30v npn darlington OA 70 25K200 pmd25k120 PMD25K200
    Text: A LAMBDA SWITCHING POWER DARLINGTONS PMD 25K SERIES 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 25K120 P M D 25K150 PM D 25K200 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


    OCR Scan     		PDF

    pmd20k200

    Abstract: diode OA-70 20K150
    Text: SEflTECH CORP 56E D • fiia H B I 000320b 204 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD 20K120 PMD 20K150 PMD 20K200 Collector Base Voltage PMD 20K120 PMD 20K150 PMD 20K200 FEATURES


    OCR Scan     		PDF 000320b 20K120 20K150 20K200 pmd20k200 diode OA-70

    80 amp 80v npn darlington

    Abstract: 10 amp npn darlington power transistors with low saturation voltage
    Text: SEMTECH CORP S ñE D • Û I B T I B 11! 00032Sti 577 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD10K, 11K80 PMD10K, 11K100 V ceO Collector Base Voltage PMD10K, 11K80 PMD10K, 11K100 V c 80


    OCR Scan     		PDF 00032Sti PMD10K, 11K80 11K100 DGD32tjO 80 amp 80v npn darlington 10 amp npn darlington power transistors with low saturation voltage

    2N6354

    Abstract: 2NG354 2N6496 2ng3 150V15
    Text: 2N6354 2 N6496 POWER TRANSISTORS 20 Amp, 150 V, Double Diffused NPN Mesa FEATURES DESCRIPTION • • • • These double diffused glass passivated mesa power transistors combine fastswitching, low saturation voltage and rugged Es/b capability. They are de­


    OCR Scan     		PDF 2N6354 N6496 500ns 2N6496 2NG354 2N6496 2ng3 150V15

    2N3712

    Abstract: mbd5300 2N3772 MSD6100 mbd-5300
    Text: HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­ ing applications. Features: • Forward biased second breakdown current capability


    OCR Scan     		PDF 2N3772 2N3772 2N3712 mbd5300 MSD6100 mbd-5300

    2N3771 power circuit

    Abstract: 2N3771 MBD5300 MSD6100
    Text: HIGH POWER 2N3771 NPN POWER TRANSISTORS 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­ ing applications. Features: • Forward biased second breakdown current capability


    OCR Scan     		PDF 2N3771 T0-204AA 2N3771 power circuit 2N3771 MBD5300 MSD6100

    bsw68a

    Abstract: BSW67A MOTOROLA
    Text: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C


    OCR Scan     		PDF t-3b72S4 BSW67A BSW68A BSW68A BSW67A MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage


    OCR Scan     		PDF ZTX554 ZTX555 -120V -140V -100mA, -10mA* ZTX555

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555


    OCR Scan     		PDF ZTX554 ZTX555 001G35S

    mbd5300

    Abstract: mbd-5300 2N6487 MSD6100
    Text: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A


    OCR Scan     		PDF 2N6487 O-22QAB T0-220-AB 2N6487 mbd5300 mbd-5300 MSD6100

    MTM20N08

    Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP2P45 MTM35N05 IRF123 IRF150 MTM12N08 MTM12P08 MTM25N08 MTM55N08