FMMT455
Abstract: FMMT555 transistor ztx
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 200 1 -1 400 100 -0.01 tr IC - Collector Current Amps
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FMMT555
FMMT455
IC/10
-100mA,
-10mA*
-10mA,
FMMT455
FMMT555
transistor ztx
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ZTX555
Abstract: ZTX554 DSA003769
Text: ZTX554 ZTX555 ISSUE 1 MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 -0.0001 -0.001 -0.01 -0.1
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ZTX554
ZTX555
IC/10
ZTX554/55-2
ZTX555
ZTX554
DSA003769
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Untitled
Abstract: No abstract text available
Text: ZTX554 Not Recommended for New Design Please Use ZTX555 ZTX554 ZTX555 ISSUE 1 MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts)
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ZTX554
ZTX555
ZTX555
100ms
ZTX554
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 -0.01 -1 400 100 200 tr IC - Collector Current Amps
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FMMT555
FMMT455
IC/10
-100mA,
-10mA*
-10mA,
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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pnp transistor 1000v
Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)
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FMMT555
FMMT455
IC/10
100ms
-10mA,
-300mA,
-50mA,
100MHz
ZTX554
ZTX555
pnp transistor 1000v
FMMT555
FMMT455
PNP POWER TRANSISTOR SOT23
ZTX554
ZTX555
DSA003698
transistor VCBO 1000V IC 100mA
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE
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FMMT455
100ms
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Tip300
Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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202AC
220AB
126var
Tip300
2SA8140
BCX53 Rohm
2SA8150
rohm 6AE
2SA1358Y
MM4006
2SA1358-Y
2SA815
2sb631 hitachi
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage
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ZTX554
ZTX555
-120V
-140V
-100mA,
-10mA*
ZTX555
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Untitled
Abstract: No abstract text available
Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc
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70S7fl
000bfl7fl
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
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Untitled
Abstract: No abstract text available
Text: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages
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ZX557
ZTX554
ZTX555
ZTX556
ZTX557
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555
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ZTX554
ZTX555
001G35S
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2LU50
Abstract: No abstract text available
Text: E-LINE TRANSISTORS TABLE 5: HIGH PERFORMANCE E LINE TRANSISTORS Pd = 1 W att The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 Amp with power dissipation capabilities of 1 Watt at 25°C ambient temperature. Typical
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ZTX458
ZTX457
ZTX455
FXT455
ZTX454
ZTX453
FXT453
2N6730
2N6732
2N6729
2LU50
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Untitled
Abstract: No abstract text available
Text: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps
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7E50533
000SD7M
ZTX657
MPSA42
BF393
BF392
ZTX656
MPSA43
BF391
ZTX655
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2TX650
Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
Text: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.
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ZTX4555
ZTX555
ZTX454
ZTX554
ZTX4535
ZTX553
ZTX452
SO-94
SO-95
SO-97
2TX650
BFS97
BFS98
ZTX337
ZTX338
MPSA06
MPSA56
ZTX451
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ZTX458
Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA425
MPSA92
BF393
BF493
BF493
BF392
MPSA92
ZTX558
ZTX757
ZTX758
2N5401 BF391
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BF493
Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.
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1000mW
ZTX4555
ZTX555
ZTX454
ZTX554
ZTX453S
ZTX553
ZTX452
ZTX552
MPSA06
BF493
ZTX338
ZTX451
ZTX551
ZTX552
ZTX553
ZTX554
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2TX650
Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Text: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA42S
MPSA92
BF393
BF493
2TX650
zetex transistors TO92
BF493
ZTX558
ZTX758
BF392
MPSA92
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ZT Ferranti
Abstract: BF4935P SE-169 TX-550 X752 X449
Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current
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TQ-92
ZTX752
ZTX751
ZTX749
SO-96
107il/D
SE172
ZT Ferranti
BF4935P
SE-169
TX-550
X752
X449
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Untitled
Abstract: No abstract text available
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 °C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ZTX555
ZTX554
ZTX553
ZTX552
MPSA56
ZTX551
ZTX455
ZTX454
ZTX453
ZTX452
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BFS98
Abstract: BFS61 BFS59 BFS60 BFS97 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.
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1000mW
ZTX4555
ZTX555
ZTX454
ZTX554
ZTX453S
ZTX553
ZTX452
ZTX552
MPSA06
BFS98
BFS61
BFS59
BFS60
BFS97
ZTX451
ZTX551
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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