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    150 10V Search Results

    150 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    150 10V Price and Stock

    Littelfuse Inc 0215010.VXP

    FUSE CERAMIC 10A 250VAC 5X20MM
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    DigiKey 0215010.VXP Bulk 1 1
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    Newark 0215010.VXP Bulk 5
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    RS 0215010.VXP Bulk 21 1
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    Ozdisan Elektronik 0215010.VXP
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    Littelfuse Inc 0315010.VXP

    FUSE GLASS 10A 32VAC 3AB 3AG
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    DigiKey 0315010.VXP Bulk 5
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    RS 0315010.VXP Bulk 8 Weeks 5
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    Ozdisan Elektronik 0315010.VXP
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    Littelfuse Inc 0315.010VXP

    FUSE GLASS 10MA 250VAC 3AB 3AG
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    DigiKey 0315.010VXP Bulk 5
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    RS 0315.010VXP Bulk 8 Weeks 5
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    Ozdisan Elektronik 0315.010VXP
    • 1 $12.50616
    • 10 $11.688
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    Samtec Inc JW-10-04-T-S-415-010-VS

    Conn Board Stacker HDR 10 POS 10.55mm Stack Height 3.96mm Solder ST SMD Bulk - Bulk (Alt: JW-10-04-T-S-415-0)
    Free Sample
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    Master Electronics JW-10-04-T-S-415-010-VS
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    TDK Corporation VLS6045EX-150M

    Power Inductors - SMD 15uH 0.075ohms 3.1A
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    Mouser Electronics VLS6045EX-150M 59,614
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    Find more 150 10V price and stock on Findchips.com

    150 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150N15

    Abstract: E 150N10 150N10 9100pF
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20


    Original     		PDF 150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30


    Original     		PDF 150N15 OT-227

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 E153432

    L7809CV

    Abstract: L7812ML L78S05CV L7812CV ST L78M06ABS l78m05acs L78S12CV L7808CV L7820CV L7815CV
    Text: VOLTAGE REGULATORS CROSS REFERENCE: SANYO VS ST T j o C Iout (A) Tol (%) 5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V5 8.5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V85 10V LOW DROP -40 to 150 1.5 2 TO-220 L4940V10 Description Package SANYO ST 12V LOW DROP -40 to 150


    Original     		PDF O-220 L4940V5 L4940V85 L4940V10 L4940V12 L4941BDT OT-194 L7809CV L7812ML L78S05CV L7812CV ST L78M06ABS l78m05acs L78S12CV L7808CV L7820CV L7815CV

    180N15

    Abstract: 123B16
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS


    Original     		PDF 180N15 728B1 123B1 728B1 065B1 180N15 123B16

    Untitled

    Abstract: No abstract text available
    Text: IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 128N15 O-264 728B1 123B1 728B1 065B1

    IXTH75N15

    Abstract: 75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2 IXTH75N15 75N15

    75N15

    Abstract: .75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous


    Original     		PDF 75N15 O-247 728B1 75N15 .75N15

    96N15P

    Abstract: IXTQ96N15P
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


    Original     		PDF 96N15P 96N15P IXTQ96N15P

    Untitled

    Abstract: No abstract text available
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2

    96n15

    Abstract: No abstract text available
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


    Original     		PDF 96N15P 96n15

    diode SM 88A

    Abstract: transistor N 343 AD
    Text: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient


    Original     		PDF 88N15 O-247 728B1 123B1 728B1 065B1 diode SM 88A transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLUUA08A – March 2013 – Revised April 2013 bq2425xEVM-150, Single-Cell Li-Ion Switch-Mode Charger This user's guide describes the characteristics, operation, and use of the bq24250EVM-150, bq24251EVM-150, and bq24257EVM-150 evaluation modules EVM . These EVMs enable test and


    Original     		PDF SLUUA08A bq2425xEVM-150 bq24250EVM-150 bq24251EVM-150 bq24257EVM-150 bq24250 bq24251 bq24257 bq2425x

    2N6658

    Abstract: VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 2N6658 VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641

    VN66AF

    Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN66AF VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630

    skfh150

    Abstract: No abstract text available
    Text: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF FT150 SKFT150 SKFH150 013bL G00473A skfh150

    Untitled

    Abstract: No abstract text available
    Text: 5EMIKR0N V rrm tq T*j = 125 °C Itrms (maximum values for continuous operation) 350 A V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm I t a v (sin. 160', Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF SKFH150 SKFT150 A13bb71

    VN46AF

    Abstract: VN66AF 2N6658 VN89AF VN67AF VN88 2N6657 VN66AD IRF620 IRF630
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN46AF VN66AF 2N6658 VN89AF VN67AF VN88 2N6657 VN66AD IRF620 IRF630

    VN88AD

    Abstract: 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN88AD 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640

    VN99AB

    Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN99AB VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633

    semikron SKFT 150

    Abstract: semikron SKFT 40
    Text: SEMIKRON tq Tvj = 125 °C Itrms (m axim um values fo r contin u o us operation) V rrm V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm 350 A Itav (sin. 180; Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF SKFT150 semikron SKFT 150 semikron SKFT 40

    semikron SKFH150

    Abstract: Semipack skfh
    Text: SEMIKRDN Itrm s m axim um v a lu e s for co ntinuo us operation V rrm tq (Tv) = 125 °C) V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S1) V drm 350 A It a v (Sin. 180; To«» = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF f--20-= SKFH150 semikron SKFH150 Semipack skfh

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642