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    15.03 J1 Search Results

    15.03 J1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1503J-130C Data Delay Devices Max delay 130 ns, Mechanically variable delay line Original PDF
    1503J-130C Data Delay Devices devices are mechanically variable, passive delay lines. The signal input (IN) is reproduced at the tap output (TAP) Original PDF
    1503J-150A Data Delay Devices devices are mechanically variable, passive delay lines. The signal input (IN) is reproduced at the tap output (TAP) Original PDF
    1503J-150A Data Delay Devices Max delay 150 ns, Mechanically variable delay line Original PDF

    15.03 J1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    crouzet octal timer

    Abstract: Crouzet Timer 814 Crouzet 88826103 crouzet TIMER WM1784-ND 87610150 crouzet repeat cycle timer Crouzet 814 timer 87610340 crouzet timer multifunction timer
    Text: NEW! Analog Timer Controls Couzet’s Chronos series of timers are their newest timers with improved features such as greater accuracy, LED status indicator, 3 wire sensor control option and a heavy duty 10A relay. Perfect for all delay-on/off functions as well as Interval timing, repetitive cycle timing and remote triggered sequence timing. All timers are cUL and CE approved.


    Original     		PDF co1048150D100230A 700LN001N48150D100230A 701LN001N1248D 700LN001N1248D2060A 701SR601048150D100230A 701PR-102 701PR-112 703PR-102 703PR-112 906D36HGA crouzet octal timer Crouzet Timer 814 Crouzet 88826103 crouzet TIMER WM1784-ND 87610150 crouzet repeat cycle timer Crouzet 814 timer 87610340 crouzet timer multifunction timer

    marking codes fairchild

    Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
    Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4


    Original     		PDF J24AQ J28AQ J28CQ J32AQ J40BQ MBS28A marking codes fairchild NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ

    691102710002

    Abstract: 4 pin optocoupler 12v INFINEON application note
    Text: AN- EVAL- 3 RBR06 65 JZ BDTIC 30W 12V SMPS e va l uat ion boar d wit h I CE3RB R0665J Z Appl icat ion Not e AN - EVAL- 3RB R0665JZ V1. 0 , 2014- 07- 22 Po wer Manag em ent & Mult im ar k et www.BDTIC.com/infineon BDTIC Edition 2014-07-22 Published by Infineon Technologies AG,


    Original     		PDF RBR06 R0665J R0665JZ ICE3RBR0665JZ DSO-16/12) AN-EVAL-3RBR0665JZ 691102710002 4 pin optocoupler 12v INFINEON application note

    LBT35007

    Abstract: No abstract text available
    Text: 350MHz SAW Filter 11MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT35007 www.sipatsaw.com Features — For RF SAW filter — Single-ended operation — Ceramic Surface Mount Package — Small size


    Original     		PDF 350MHz 11MHz LBT35007 2002/95/EC) 10deg/Div LBT35007

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Power Splitter - ZAPD-ED10572/1 Power Splitter Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article. • case style outline drawing: 99-01-916


    Original     		PDF ZAPD-ED10572/1

    Untitled

    Abstract: No abstract text available
    Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C105I2D 25deg

    93c46ln

    Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		PDF MTC08 VBH48A VEH64A 93c46ln 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN

    PS0SXDS60

    Abstract: IEC 352-2 6J4 CORCOM corcom 6J4 PS0S0SS60 1060-090 PE0S0SS30 corcom 6vj1
    Text: 855-2012:QuarkCatalogTempNew 8/27/12 8:57 AM Page 855 8 Power Entry Modules RoHS 6 Amps; 100-240 Volts AC, 50-60 Hz Mounting Diagram Recommended Panel Cutout Note: Specify line cord GA400 below to mate with IEC connector. 6VJ1/6J4 6VJ1 6VJ1 INTERCONNECT


    Original     		PDF GA400 PS0SXDS60 IEC 352-2 6J4 CORCOM corcom 6J4 PS0S0SS60 1060-090 PE0S0SS30 corcom 6vj1

    A4436

    Abstract: transistor a684
    Text: H Avantek Products Surface Mount Cascadable Amplifier 2 to 18 GHz Technical Data PPA-18222 Features Description Pin Configuration • Small Surface Mount Package: 0.25 in. x 0.25 in. PP-25 • GaAs MMIC Technology The PPA-18222 is an extremely wideband two stage MMIC


    Original     		PDF PPA-18222 PP-25 PPA-18222 5963-3232E. 5963-2591E A4436 transistor a684

    HDR2X3, header

    Abstract: HDR1X2 CC3216-1206 CC2012 CC3216 polarized capacitor HDR2X3 smt-induct capacitor 100nf 50v 0805 CC3225-1210
    Text: ੺໏๑ᆩኸళ āāሞཌ၍ഗJP4ࢅJP2ฉ๼෇૬༹ᅼೕ႑ࡽă‫ݴ‬՚ॽᇸ āāॽI2C႑ࡽ݀ิഗࢅথ੨‫ۉ‬ୟӱ૶থ዁ऺ໙ऐ‫ڦ‬ժႜ ႑ࡽࢅথ‫܋ں‬ᆌᆩ዁"IN1"ᆅগࢅ"GND"ᆅগă ‫܋‬੨ă āāሞJP5ฉ‫ڦ‬ᆅগኮक़૶থᅃ߲޶ሜDŽĽ8ˮDžLjሞ


    Original     		PDF LM4681 LM4681 AN-1488 AN201959 HDR2X3, header HDR1X2 CC3216-1206 CC2012 CC3216 polarized capacitor HDR2X3 smt-induct capacitor 100nf 50v 0805 CC3225-1210

    transistor RFP25N05

    Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05
    Text: RFP25N05 S E M I C O N D U C T O R 25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET April 1995 Features Packaging • 25A, 50V JEDEC TO-220AB • rDS(ON) = 0.047Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    Original     		PDF RFP25N05 O-220AB 175oC RFP25N05 1-800-4-HARRIS transistor RFP25N05 AN7254 AN7260 AN9321 AN9322

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH55015 CGH55015 CGH5501 CGH55015F

    10 awg twh

    Abstract: diagram 3 phase heater LCD TV backlight power inverter 650C LC050 RS170
    Text: White Electronic Designs Display Systems Division 199-0009-00 AMLCD PRODUCT - MODEL LC050 Ruggedized 5.0" Display Head Assembly 320 x 234 OVERVIEW White Electronic Designs’ 5.0” sunlight readable display head assembly with backlight is ruggedized for harsh


    Original     		PDF LC050 -400C 2000Hz, 91grms. 15-30Hz, 30-35Hz 35-2000Hz, 16grms. Mil-STD-81OE, 10 awg twh diagram 3 phase heater LCD TV backlight power inverter 650C LC050 RS170

    2312 footprint dimension

    Abstract: No abstract text available
    Text: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz


    Original     		PDF AG603-89G OT-89 AG603-89 2312 footprint dimension

    Untitled

    Abstract: No abstract text available
    Text: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz


    Original     		PDF AG603-89G OT-89 AG603-89G AG603-89

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz

    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor

    CC2012-0805

    Abstract: CC3216-1206 CC3225-1210 cc4532-1812 HDR1X2 100uF polarized capacitor polarized capacitor HDR2X3, header CC3225 AN-1187
    Text: National Semiconductor Application Note 1488 Kevin Hoskins May 2006 Quick Start Guide Connect a load ≥ 8Ω between the pins on JP5 and another load between the pins on JP3. Apply power. Make measurements. Plug in a pair of headphones. Enjoy. 2 Connect the I C signal generation and interface board to a


    Original     		PDF LM4681 ver11. CSP-9-111S2) AN-1488 CC2012-0805 CC3216-1206 CC3225-1210 cc4532-1812 HDR1X2 100uF polarized capacitor polarized capacitor HDR2X3, header CC3225 AN-1187

    CGH40035FE

    Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
    Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and


    Original     		PDF CGH40035 CGH40035 CGH40035, CGH4003 CGH40035FE STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035F str 765 RT

    Untitled

    Abstract: No abstract text available
    Text: TQP3M9037 Ultra Low Noise, High Linearity LNA Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • • •


    Original     		PDF TQP3M9037 TQP3M9036

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F

    lm 3254

    Abstract: ICA1009 11293
    Text: u u lÌ ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS IC A 1009 Chip Outline


    OCR Scan     		PDF ICA1009 J1-4401 lm 3254 ICA1009 11293

    Untitled

    Abstract: No abstract text available
    Text: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS


    OCR Scan     		PDF ICA1009 ICA1009 J1-4401