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Catalog Datasheet	MFG & Type	PDF	Document Tags
CGH40035FE Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and	Original	PDF	CGH40035 CGH40035 CGH40035, CGH4003 CGH40035FE STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035F str 765 RT

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PDF

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CGH40035FE

Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and

Original

PDF

CGH40035 CGH40035 CGH40035, CGH4003 CGH40035FE STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035F str 765 RT