SC-75A
Abstract: SC-89 Si1031R Si1031X marking code h
Text: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D
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Si1031R/X
08-Apr-05
SC-75A
SC-89
Si1031R
Si1031X
marking code h
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SUM27N20-78
Abstract: No abstract text available
Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V
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SUM27N20-78
O-263
S-31511--Rev.
14-Jul-03
SUM27N20-78
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31507
Abstract: SC-75A SC-89 Si1031R Si1031X
Text: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D
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Si1031R/X
SC-75A,
Si1031R
S-31507--Rev.
14-Jul-03
31507
SC-75A
SC-89
Si1031X
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Untitled
Abstract: No abstract text available
Text: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V
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Si6880AEDQ
Si6880AEDQ-T1
08-Apr-05
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marking AD sc70-6
Abstract: No abstract text available
Text: Si1404DH New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.35 @ VGS = 4.5 V 1.57 0.45 @ VGS = 2.5 V 1.39 APPLICATIONS D Load Switch for Portable Devices 25 SOT-363
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Si1404DH
SC-70
OT-363
SC-70
Si1404DH-T1
s-31510--Rev.
14-JuL-03
marking AD sc70-6
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Si8407DB
Abstract: No abstract text available
Text: Si8407DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.027 @ VGS = - 4.5 V - 8.2 0.032 @ VGS = - 2.5 V - 7.5 0.045 @ VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View 5 S S D TrenchFETr Power MOSFET
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Si8407DB
Si8407DB-T2
63/37Pb
S-31502--Rev.
14-Jul-03
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Untitled
Abstract: No abstract text available
Text: Si2319DS Vishay Siliconix New Product P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = - 10 V - 3.0 0.130 @ VGS = - 4.5 V - 2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2
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Si2319DS
O-236
OT-23)
Si2319DS-T1
S-31503--Rev.
14-Jul-03
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s3-1515
Abstract: SUM45N25-58
Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V
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SUM45N25-58
O-263
SUM45N25-58N-Channel
S-31515--Rev.
14-Jul-03
s3-1515
SUM45N25-58
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Si8407DB
Abstract: Si8902EDB
Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX
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275-mm
Si8407DB-T2
Si8902EDB-T2
10-sprocket
93-5211-x)
92-5210-x)
S-31501--Rev.
14-Jul-03
Si8407DB
Si8902EDB
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SUM27N20-78
Abstract: No abstract text available
Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V
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SUM27N20-78
O-263
18-Jul-08
SUM27N20-78
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Untitled
Abstract: No abstract text available
Text: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V
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Si4955DY
0-V/20-V
Si4955DY-T1
S-31509--Rev.
14-Jul-03
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Si6880AEDQ
Abstract: No abstract text available
Text: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V
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Si6880AEDQ
Si6880AEDQ-T1
S-31506--Rev.
14-Jul-03
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SUM27N20-78
Abstract: s3151
Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V
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SUM27N20-78
O-263
08-Apr-05
SUM27N20-78
s3151
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Untitled
Abstract: No abstract text available
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.110 @ VGS = -4.5 V -2.5 0.145 @ VGS = -2.5 V -2.0 0.220 @ VGS = -1.8 V -1.0 D TrenchFETr Power MOSFETS D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1
S-31404--Rev.
14-Jul-03
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raychem aa-400
Abstract: raychem aa 400 raychem heat shrinkable sleeve raychem solder sleeve J-STD-006
Text: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI/J-STD-006. FLUX: TYPE ROL1 per ANSI/J-STD-004.
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ANSI/J-STD-006.
ANSI/J-STD-004.
AA-400
D-141-51
14-Jul-03
D030390
raychem aa-400
raychem aa 400
raychem heat shrinkable sleeve
raychem solder sleeve
J-STD-006
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Untitled
Abstract: No abstract text available
Text: 2R, 3R, 4R Vishay Foil Resistors Bulk Metal Foil Technology Molded Resistor Networks FEATURES THROUGH HOLE Product may not be to scale Unitized Resistor Networks are comprised of Vishay S102C elements combined and molded into single units. This method of making networks yields some important advantages that
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S102C
14-Jul-03
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Untitled
Abstract: No abstract text available
Text: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel)
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Si4876DY
Si4876DY-T1
S-31508--Rev.
14-Jul-03
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Si8407DB
Abstract: No abstract text available
Text: Si8407DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Provides Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance rDS(on) (W) ID (A)
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Si8407DB
Si8407DB-T2
63/37Pb
S-31502--Rev.
14-Jul-03
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770988-1
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBUCATION-^ E Q ELECTRONICS CORPORATION. REVISIONS ALL RIGHTS RESERVED. 00 CM -DESCRIPTION-REVISED PER 0 G 3 B -0 3 8 9 - 0 3 SC 14JUL03 CJ - 0.38 [.015 ]
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0G3B-0389-03
14JUL03
17105-360B
31MAR2000
770988-1
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT E RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. REVISIONS CM 00 0 ELECTRONICS CORPORATION. -DESCRIPTION- -1 7 . 0 4 REVISED PER 0 G 3 B -0 3 8 9 - 0 3 14JUL03 SC CJ -1 1 . 8 1 5 0 .9 9 + 0 .0 3 —
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0G3B-0389-03
14JUL03
17105-360B
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17709860
Abstract: RICS
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBUCATION T - . DIST LOC ALL RIGHTS RESERVED. REVISIONS CM 00 p LTR F •0 .37 [.0 1 5 ] A MAX CUT-OFF TAB [.0 0 0 0 5 0 ] OR M IN APVD SC CJ N IC K E L. WIRE 3. IN S U L A T IO N RANGE: 4. DIM E N S IO N S IN RANGE:
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0G3B-0389-03
14JUL03
17105-360B
31MAR2000
17709860
RICS
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