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    SC-75A

    Abstract: SC-89 Si1031R Si1031X marking code h
    Text: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D


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    Si1031R/X 08-Apr-05 SC-75A SC-89 Si1031R Si1031X marking code h PDF

    SUM27N20-78

    Abstract: No abstract text available
    Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V


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    SUM27N20-78 O-263 S-31511--Rev. 14-Jul-03 SUM27N20-78 PDF

    31507

    Abstract: SC-75A SC-89 Si1031R Si1031X
    Text: Si1031R/X New Product Vishay Siliconix P-Channel 20-V D-S MOSFET 1.5−V Rated PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D D D


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    Si1031R/X SC-75A, Si1031R S-31507--Rev. 14-Jul-03 31507 SC-75A SC-89 Si1031X PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V


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    Si6880AEDQ Si6880AEDQ-T1 08-Apr-05 PDF

    marking AD sc70-6

    Abstract: No abstract text available
    Text: Si1404DH New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.35 @ VGS = 4.5 V 1.57 0.45 @ VGS = 2.5 V 1.39 APPLICATIONS D Load Switch for Portable Devices 25 SOT-363


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    Si1404DH SC-70 OT-363 SC-70 Si1404DH-T1 s-31510--Rev. 14-JuL-03 marking AD sc70-6 PDF

    Si8407DB

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.027 @ VGS = - 4.5 V - 8.2 0.032 @ VGS = - 2.5 V - 7.5 0.045 @ VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View 5 S S D TrenchFETr Power MOSFET


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    Si8407DB Si8407DB-T2 63/37Pb S-31502--Rev. 14-Jul-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2319DS Vishay Siliconix New Product P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = - 10 V - 3.0 0.130 @ VGS = - 4.5 V - 2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2


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    Si2319DS O-236 OT-23) Si2319DS-T1 S-31503--Rev. 14-Jul-03 PDF

    s3-1515

    Abstract: SUM45N25-58
    Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V


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    SUM45N25-58 O-263 SUM45N25-58N-Channel S-31515--Rev. 14-Jul-03 s3-1515 SUM45N25-58 PDF

    Si8407DB

    Abstract: Si8902EDB
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX


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    275-mm Si8407DB-T2 Si8902EDB-T2 10-sprocket 93-5211-x) 92-5210-x) S-31501--Rev. 14-Jul-03 Si8407DB Si8902EDB PDF

    SUM27N20-78

    Abstract: No abstract text available
    Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V


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    SUM27N20-78 O-263 18-Jul-08 SUM27N20-78 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V


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    Si4955DY 0-V/20-V Si4955DY-T1 S-31509--Rev. 14-Jul-03 PDF

    Si6880AEDQ

    Abstract: No abstract text available
    Text: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V


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    Si6880AEDQ Si6880AEDQ-T1 S-31506--Rev. 14-Jul-03 PDF

    SUM27N20-78

    Abstract: s3151
    Text: SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W) ID (A) 0.078 @ VGS = 10 V


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    SUM27N20-78 O-263 08-Apr-05 SUM27N20-78 s3151 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.110 @ VGS = -4.5 V -2.5 0.145 @ VGS = -2.5 V -2.0 0.220 @ VGS = -1.8 V -1.0 D TrenchFETr Power MOSFETS D Symetrical Dual P-Channel


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    Si3983DV Si3983DV-T1 S-31404--Rev. 14-Jul-03 PDF

    raychem aa-400

    Abstract: raychem aa 400 raychem heat shrinkable sleeve raychem solder sleeve J-STD-006
    Text: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI/J-STD-006. FLUX: TYPE ROL1 per ANSI/J-STD-004.


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    ANSI/J-STD-006. ANSI/J-STD-004. AA-400 D-141-51 14-Jul-03 D030390 raychem aa-400 raychem aa 400 raychem heat shrinkable sleeve raychem solder sleeve J-STD-006 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2R, 3R, 4R Vishay Foil Resistors Bulk Metal Foil Technology Molded Resistor Networks FEATURES THROUGH HOLE Product may not be to scale Unitized Resistor Networks are comprised of Vishay S102C elements combined and molded into single units. This method of making networks yields some important advantages that


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    S102C 14-Jul-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4876DY Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.005 @ VGS = 4.5 V 21 0.0075 @ VGS = 2.5 V 17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel)


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    Si4876DY Si4876DY-T1 S-31508--Rev. 14-Jul-03 PDF

    Si8407DB

    Abstract: No abstract text available
    Text: Si8407DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Provides Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance rDS(on) (W) ID (A)


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    Si8407DB Si8407DB-T2 63/37Pb S-31502--Rev. 14-Jul-03 PDF

    770988-1

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBUCATION-^ E Q ELECTRONICS CORPORATION. REVISIONS ALL RIGHTS RESERVED. 00 CM -DESCRIPTION-REVISED PER 0 G 3 B -0 3 8 9 - 0 3 SC 14JUL03 CJ - 0.38 [.015 ]


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    0G3B-0389-03 14JUL03 17105-360B 31MAR2000 770988-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT E RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. REVISIONS CM 00 0 ELECTRONICS CORPORATION. -DESCRIPTION- -1 7 . 0 4 REVISED PER 0 G 3 B -0 3 8 9 - 0 3 14JUL03 SC CJ -1 1 . 8 1 5 0 .9 9 + 0 .0 3 —


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    0G3B-0389-03 14JUL03 17105-360B PDF

    17709860

    Abstract: RICS
    Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBUCATION T - . DIST LOC ALL RIGHTS RESERVED. REVISIONS CM 00 p LTR F •0 .37 [.0 1 5 ] A MAX CUT-OFF TAB [.0 0 0 0 5 0 ] OR M IN APVD SC CJ N IC K E L. WIRE 3. IN S U L A T IO N RANGE: 4. DIM E N S IO N S IN RANGE:


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    0G3B-0389-03 14JUL03 17105-360B 31MAR2000 17709860 RICS PDF