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    DO-220AA

    Abstract: No abstract text available
    Text: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features


    Original     		PDF DO-220AA J-STD-020C J-STD-002B JESD22-B102D 14-Nov-05 DO-220AA

    74115

    Abstract: AN609 Si4856DY 74177
    Text: Si4856DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4856DY AN609 14-Nov-05 74115 74177

    Untitled

    Abstract: No abstract text available
    Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd, 3rd & 5th Harmonic : Pushing: Pulling, 12dBr pk-pk (all Phases): Tuning Sensitivity:


    Original     		PDF 12dBr 10kHz CVCO25CL-0160-0220 14-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:


    Original     		PDF 10kHz 100kHz CVCO55CL-0470-0520 14-Nov-05

    2314 mosfet

    Abstract: Si4892BDY AN609
    Text: Si4892BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4892BDY AN609 14-Nov-05 2314 mosfet

    7636

    Abstract: 7636 mosfet mosfet 4812 4812 mosfet 1216 AN609 Si4840DY
    Text: Si4840DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4840DY AN609 14-Nov-05 7636 7636 mosfet mosfet 4812 4812 mosfet 1216

    AN609

    Abstract: Si1557DH
    Text: Si1557DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1557DH AN609 14-Nov-05

    74114

    Abstract: SI4856ADY-RC 74114 data sheet 4894 7115 si4856A 48276 AN609 Si4856ADY
    Text: Si4856ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4856ADY AN609 14-Nov-05 74114 SI4856ADY-RC 74114 data sheet 4894 7115 si4856A 48276

    SL34A

    Abstract: SL32A SL32 SL33 SL33A SL34
    Text: SL32A Thru SL34A Low VF Surface Mount Schottky Barrier Rectifiers P b Lead Pb -Free Features: * Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For surface mounted applications.


    Original     		PDF SL32A SL34A MIL-S-19500 JEDECDO-214AC. MIL-STD-750, 14-Nov-05 SL34A SL32 SL33 SL33A SL34

    Untitled

    Abstract: No abstract text available
    Text: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features


    Original     		PDF DO-220AA J-STD-020C J-STD-002B JESD22-B102D 08-Apr-05

    74113

    Abstract: SI4850EY AN609 34721
    Text: Si4850EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4850EY AN609 14-Nov-05 74113 34721

    Untitled

    Abstract: No abstract text available
    Text: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • P case offers single-sided lead Pb -free terminations. • Wraparound lead (Pb)-free terminations: Q, S, A, B and T. • Low Impedance.


    Original     		PDF EIA-481-1 14-Nov-05

    74112

    Abstract: AN609 Si4825DY
    Text: Si4825DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4825DY AN609 14-Nov-05 74112

    Untitled

    Abstract: No abstract text available
    Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:


    Original     		PDF 10kHz 100kHz CVCO55BE-2650-2800 14-Nov-05

    6558

    Abstract: AN609 Si1539DL
    Text: Si1539DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1539DL AN609 14-Nov-05 6558

    74110

    Abstract: c 4161 AN609 Si4682DY
    Text: Si4682DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4682DY AN609 14-Nov-05 74110 c 4161

    78256

    Abstract: 4562 mosfet 4562 9373 AN609 Si4567DY SI4567
    Text: Si4567DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4567DY AN609 14-Nov-05 78256 4562 mosfet 4562 9373 SI4567

    14584

    Abstract: AN609 Si1553DL
    Text: Si1553DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1553DL AN609 14-Nov-05 14584

    74116

    Abstract: AN609 Si4892DY 607-60
    Text: Si4892DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4892DY AN609 14-Nov-05 74116 607-60

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. SEPT ,2005- LOC ALL RIGHTS RESERVED. REVISIONS DIST E B P LTR DESCRIPTION E DATE ECR — 05 —01 5561 DWN APVD JMS FWK 14NOV05 NOTES: A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107- 3275


    OCR Scan     		PDF 14NOV05 12SEPT05 RG58C/U, 41A/U, 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION A L L RIGHTS RESERVED. LOC D IST AF 50 R E V IS IO N S LTR K1 DESC RIPTIO N DATE 14NOV05 REVISED PER E C R - 0 5 - 0 1 2571 DWN APVD MF GP D D


    OCR Scan     		PDF 14NOV05

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 P LTR DESCRIPTION D D R E V IS E D PER ECO-05-008694 DATE DWN APVD 14NOV05 BM JL D FOLD CENTER CONDUCTOR


    OCR Scan     		PDF 14NOV05 ECO-05-008694 MAY2003 21MAY03

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2005 BY TYCO 2 3 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS SEPT ,2 0 0 5 . REVISIONS D IS T RE S ER VED . P LTR NOTES: D A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275


    OCR Scan     		PDF 29AUG08 31MAR2000 RG59B/U, 140/U URM90

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP


    OCR Scan     		PDF 14NOV05 19DEC2002 19DEC2002 31MAR2000