RA07M1317MS
Abstract: 135175MHz ra07m1317msa
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to
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RA07M1317MSA
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
135175MHz
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RA30H1317M
Abstract: RA30H1317M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
24Jan
RA30H1317M-101
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RD12MVP1
Abstract: RD12MVS1 2040D
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V
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AN-VHF-034-B
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/17meter)
RD12MVS1
2040D
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RA30H1317M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M1
135-175MHz
RA30H1317M1
30-watt
175-MHz
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RA08H1317
Abstract: RA08H1317M RA08H1317M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
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RA08H1317M
08H1317
135-175MHz
RA08H1317M
175-MHz
RA08H1317
RA08H1317M-101
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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RD07MUS2B
Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V
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AN-VHF-047-A
RD07MUS2B
RD07MUS2B:
083YH-G"
RD07MUS2B
175MHz
250mA
2302S
2306C
RPC10T
Single-Stage amplifier
GRM2162C1H101GD01E
2306C
135-175MHz
GRM2162C1H200GD01E
GRM2162C1H220GD01E
GRM2162C1H430GD01E
GRM2162C1H560GD01E
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RA08N1317M
Abstract: RA08N1317M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz
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RA08N1317M
135-175MHz
RA08N1317M
175-MHz
RA08N1317M-01
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RA07M1317M
Abstract: RA07M1317M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to
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RA07M1317M
135-175MHz
RA07M1317M
175-MHz
RA07M1317M-01
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RA08N1317M
Abstract: RA08N1317M-101 RA08N1317
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz
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RA08N1317M
135-175MHz
RA08N1317M
175-MHz
RA08N1317M-101
RA08N1317
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RA60H1317M-101
Abstract: RA60H1317M RA60H1317M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
RA60H1317M-101
RA60H1317M1
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MAX232 8pin configuration
Abstract: max232 interface pic pc RS232 MAX232 RX1M-151-5 DB9M NULL DATASHEET MAX232 TX1M-151-5 FM RADIO transmitter circuit diagram vhf fm transmitter
Text: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 3, 19 October2007 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 TX1M/RX1M VHF Narrow Band Band FM multi channel radio Transmitter & Receiver UK Version: RX1M-173-5/TX1M-173-5 (10mW)
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October2007
RX1M-173-5/TX1M-173-5
TX1M-151-5
RX1M-151-5
MAX232 8pin configuration
max232 interface pic pc
RS232 MAX232
RX1M-151-5
DB9M NULL DATASHEET
MAX232
TX1M-151-5
FM RADIO transmitter circuit diagram
vhf fm transmitter
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RD12MVP1
Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data
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AN-VHF-034-A
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
mitsubishi 5218
5253 1007
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RA30H1317M1-201
Abstract: Mitsubishi GP730 RA30H1317M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M1
135-175MHz
RA30H1317M1
30-watt
175-MHz
RA30H1317M1-201
Mitsubishi
GP730
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
RD07MUS
RD07MUS2
f763
gp 817
329J
RD07M
mitsubishi MOSFET
jc 817
j-120
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RA07M1317MS
Abstract: RA07M1317MSA RA07M1317M-s RA07M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to
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RA07M1317MSA
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
RA07M1317M-s
RA07M
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hatfield attenuator
Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
hatfield attenuator
RA60H1317M-01
RA60H1317M-E01
RF MOSFET MODULE
low voltage power transistor
RF MODULE CIRCUIT DIAGRAM
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RA60H131
Abstract: RA60H1317M-101
Text: <Silicon RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
RA60H131
RA60H1317M-101
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GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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Untitled
Abstract: No abstract text available
Text: Hartcran House, 231 Kenton Lane, Harrow, Middlesex, HA3 8RP, England Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233, www.radiometrix.com QPX1 Issue 1, 31 July 2012 123455267859ABC4DDE82F 2 4DBE9E The QPX1 transceiver module offers a 2 watt RF output VHF radio link, in a robust
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123455267859ABC4DDE82F
QPX1-173-5-12k5-FCC-EAS
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schematic diagram 48v bldc motor speed controller
Abstract: power supply DVD schematic diagram ic viper 22 A fault finding all type of lcd tv file VIPER53 circuit diagram of smps 400w DESKTOP auto cut off circuity diagram 48v battery charger 3v battery mini motor speed control circuit diagram schematic diagram ac-dc welding inverter CIRCUIT Hdmi to micro usb wiring diagram VIPER22A for DVD out put of 12v and 5v
Text: www.st.com/express INDUSTRIAL AND MULTISEGMENT PRODUCTS 2. TDE1708DFT Power Switch 3. L6726A & L6727 Buck Controllers 4. practiSPIN 19. STR750 Motor Control Kit 20. USB Developer Kit 21. ST7FLiteUO Design Tool 5. L6562A PFC Controller 22. 1Mbit Serial EEPROM
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TDE1708DFT
L6726A
L6727
STR750
L6562A
PM6670
STMPE2401
24-bit
STHDMI002A
ST2G3236
schematic diagram 48v bldc motor speed controller
power supply DVD schematic diagram ic viper 22 A
fault finding all type of lcd tv file
VIPER53
circuit diagram of smps 400w DESKTOP
auto cut off circuity diagram 48v battery charger
3v battery mini motor speed control circuit diagram
schematic diagram ac-dc welding inverter CIRCUIT
Hdmi to micro usb wiring diagram
VIPER22A for DVD out put of 12v and 5v
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g35V
Abstract: "MOSFET Module" hatfield attenuator F-135 mitsubishi power module mitsubishi rf power module RF MOSFET MODULE RA08N1317M RA08N1317M-01 RA08N1317M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz
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RA08N1317M
135-175MHz
RA08N1317M
175-MHz
g35V
"MOSFET Module"
hatfield attenuator
F-135
mitsubishi power module
mitsubishi rf power module
RF MOSFET MODULE
RA08N1317M-01
RA08N1317M-E01
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Untitled
Abstract: No abstract text available
Text: A m itsu b ish i ELECTRONIC DEVICE GROUP RF POWER MODULE M67755 Series 135-175MHz Band 5W Handy Radio DESCRIPTION OUTLINE DRAWING M67755 series are thick film hybrid RF power modules especially designed for 135-175MHz band handy radios. 14 ± 0.5 ' 45 ± 1
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M67755
135-175MHz
135-175MHz
150-175MHz
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RA30H1317M
Abstract: 175mhz
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H1317M Silicon MOS FET Power Amplifier, 135-175MHz 30W FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm 66.0 + / - 0.5 21.0 2.3 MAXIMUM RATINGS SYMBOL
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RA30H1317M
135-175MHz
25deg
50ohm
RA30H1317M
175mhz
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