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    ADSP-BF537KBCZ-6AV Analog Devices Blackfin Processor,600MHz,32KB Visit Analog Devices Buy
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    ADSP-BF523KBCZ-6A Analog Devices ADSP-BF523Processor,600Mhz,Eth Visit Analog Devices Buy
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    ADP1874-0.6-EVALZ Analog Devices 600MHz Evaluation Board Visit Analog Devices Buy
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    1250 W CW, 1.8-600 MHZ Price and Stock

    ECS International Inc ECS-7050MV-1250-BN-TR

    Crystal Oscillator - 125.000 MHz - 1.6 to 3.6V - ±50ppm -40°C to +85°C - SMD - 0.276" L x 0.197" W (7.00mm x 5.00mm)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ECS-7050MV-1250-BN-TR
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    • 10000 $0.895
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    1250 W CW, 1.8-600 MHZ Datasheets Context Search

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    Product Selector Guide

    Abstract: NI-400S-2S
    Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high


    Original     		PDF MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power


    Original     		PDF MMRF1306H MMRF1306HR5 MMRF1306HR5 MMRF1306HSR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power


    Original     		PDF MMRF1306H MMRF1306HR5 MMRF1306HSR5 MMRF1306HR5

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT

    TDK Ferrite Balun

    Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP

    mrfe6vp61k25h

    Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon

    MRFE6VP61K25H

    Abstract: MRFE6VP61K25HR6 AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C

    MRFE6VP61K25H

    Abstract: MRFE6VP61K25HR6 MRFE6VP MRFE6VP61K25HSR6 MRFE6VP61 CDR33BX104AKYS ad255 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 0, 11/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H MRFE6VP MRFE6VP61K25HSR6 MRFE6VP61 CDR33BX104AKYS ad255 AN1955

    amplifier MA-920

    Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		PDF MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 amplifier MA-920 ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		PDF MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1

    j327

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 j327 A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1

    567 tone

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1 j327
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 2, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 DataMRF7S19100N 567 tone A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 j327

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3

    IRL 1530

    Abstract: C4532JB1H685M 2222153 A114 A115 AN1955 JESD22 MRF7S15100HR3 MRF7S15100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3 IRL 1530 C4532JB1H685M 2222153 A114 A115 AN1955 JESD22 MRF7S15100HSR3

    IRL 1530

    Abstract: 1606-TLC AN1955 MRF7S15100HR3 MRF7S15100HSR3 J4-81 TLC 3391
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3 IRL 1530 1606-TLC AN1955 MRF7S15100HSR3 J4-81 TLC 3391

    J365

    Abstract: TLC 3391 ATC100B150JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 J365 TLC 3391 ATC100B150JT500X

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100N AD250

    Untitled

    Abstract: No abstract text available
    Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01


    Original     		PDF SD57045-01 SD57045-01

    SD57045

    Abstract: 945 TRANSISTOR 700B M243
    Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION The SD57045 is a common source N-Channel


    Original     		PDF SD57045 SD57045 945 TRANSISTOR 700B M243

    TRANSISTOR J 5804

    Abstract: TRANSISTOR 5804 j 5804 transistor UTO-1065 2761 l transistor Avantek* UTO Avantek* UTC Avantek utc 5
    Text: W tia l H EW LETT« mL'HM P A C K A R D Avantek Products High Efficiency, C lass A, 1 Watt Am plifier 10 to 1000 MHz Technical Data UTO/UTC-1065 Features Description Pin Configuration • 1 W att O utput P ow er UTO—TO-3 • ECM System s The UTO-1065 is a wideband, high


    OCR Scan     		PDF UTO/UTC-1065 UTO-1065 TRANSISTOR J 5804 TRANSISTOR 5804 j 5804 transistor 2761 l transistor Avantek* UTO Avantek* UTC Avantek utc 5

    j 5804 transistor

    Abstract: TRANSISTOR J 5804
    Text: Thot HEW LETT % i!K A PACKARD Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 1000 MHz Technical Data UTO/UTC-1065 Features Description Pin Configuration • • • • The UTO-1065 is a wideband, high efficiency, Class A, 1 watt ampli­


    OCR Scan     		PDF UTO/UTC-1065 UTO-1065 Avail38 j 5804 transistor TRANSISTOR J 5804