M81738FP
Abstract: half bridge driver
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current
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M81738FP
M81738FP
24pin
half bridge driver
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M81019FP
Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current
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M81738FP
M81738FP
24pin
M81019FP
M81738
M81019
inverter igbt circuit diagrams in bridge
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F73-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications
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V23990-P629-L63-PM
200V/50A
V23990-P629-L63
D7-D10
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V23990-P629
Abstract: V23990-P629-F62-PM
Text: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM flow BOOST 0 1200V/40A Features flow0 12mm and 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode
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V23990-P629-F62-PM
V23990-P629-F629-PM
V23990-P629-F628Y-PM
V23990-P629-F629Y-PM
200V/40A
V23990-P629-F62-PM
V23990-P629-F628Y-PM
V23990-P629
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M81019FP
Abstract: m81019 dv/dt HVIC high voltage diodes Inverter high voltage power transistor Driver high side igbt 1200V Half Bridge Driver micro inverter
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V
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M81019FP
M81019FP
24-Lead
24P2Q-A
SSOP24-P-300-0
m81019
dv/dt HVIC
high voltage diodes
Inverter high voltage power transistor
Driver high side igbt 1200V
Half Bridge Driver
micro inverter
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V
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M81019FP
M81019FP
24-Lead
24P2Q-A
SSOP24-P-300-0
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HGT1S15N120C3
Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
Text: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching
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HGTG15N120C3,
HGTP15N120C3,
HGT1S15N120C3,
HGT1S15N120C3S
HGT1S15N120C3
HGT1S15N120C3S
150oC.
350ns
HGT1S15N120C3
HGTG15N120C3
HGTP15N120C3
RHRP15120
15N120C
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5n120
Abstract: diode zener 22A STP5N120 JESD97
Text: STP5N120 N-channel 1200V - 2.8Ω - 4.4A - TO-220 Zener - protected SuperMESH Power MOSFET TARGET SPECIFICATION Features Type VDSS RDS on ID PW STP5N120 1200V < 3.5 Ω 4.4A 160W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability
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STP5N120
O-220
5n120
diode zener 22A
STP5N120
JESD97
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JESD97
Abstract: STP1N120 P1N120
Text: STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PW STP1N120 1200V < 38Ω 500mA 45W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability
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STP1N120
500mA
O-220
500mA
JESD97
STP1N120
P1N120
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15N120C3D
Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
Text: HGTG15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance
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HGTG15N120C3D
HGTG15N120C3D
150oC.
150oC
350ns
15N120C3D
LD26
RHRP15120
15N120C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IC110
IXYR100N120C3
110ns
ISOPLUS247TM
100N120C3
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100N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
10-50kHz
110ns
O-263
IC100
24N120C3
01-15-08-C
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100N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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IXGH24N120C3
Abstract: ixga24N120 IC100 24N120C3 IXGP24N120C3 24N120
Text: Preliminary Technical Information VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
10-50kHz
110ns
O-263
IC100
24N120C3
01-15-08-C
IXGH24N120C3
ixga24N120
IC100
IXGP24N120C3
24N120
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LN-100
Abstract: diode Marking code v3 LN100
Text: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages
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LN100
LN100
DSFP-LN100
NR100312
LN-100
diode Marking code v3
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15N120C3D
Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
Text: HGTG15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG15N120C3D
HGTG15N120C3D
150oC.
150oC
350ns
1-800-4-HARRIS
15N120C3D
15N120C3
LD26
RHRP15120
15N120C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK50N120C3H1 IXGX50N120C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK50N120C3H1
IXGX50N120C3H1
IC100
O-264
IF110
50N120C3H1
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MOSFET 1200v 3a
Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXYH40N120B3D1
183ns
O-247
IF110
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DSFP-LN100
Abstract: LN-100S diode Marking code v3 BVDSS1 high voltage shunt regulator source gate m2 ZENER DIODE
Text: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages
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LN100
LN100
DSFP-LN100
NR100312
LN-100S
diode Marking code v3
BVDSS1
high voltage shunt regulator
source gate
m2 ZENER DIODE
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RHR75120
Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Text: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2
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RHR1Y75120CC
RHR1Y75120CC
O-264AA
430EB71
Q0ti37fll
RHR75120
RHR75120C
TO-264-aa
TA49042
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