Untitled
Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGH30N120FTD
FGH30N120FTD
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HGTG30N120D2
Abstract: AN7254 AN7260 HGTG20N100D2 G30N120D2
Text: HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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HGTG30N120D2
O-247
580ns
HGTG30N120D2
150oC.
AN7254
AN7260
HGTG20N100D2
G30N120D2
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APT10035LLL
Abstract: APT30D120B APT30D120S 30A 1200V Diode APT TO-247
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D120B 1200V APT30D120S 1200V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30D120B
APT30D120S
O-247
APT10035LLL
30A 1200V Diode APT TO-247
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Untitled
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
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Untitled
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
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STGW30NC120HD
Abstract: GW30NC120HD JESD97
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
GW30NC120HD
JESD97
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PDF
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Untitled
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
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PDF
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GW30NC120HD
Abstract: STGW30NC120HD schematic diagram induction heating JESD97 W313 9915 H
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
GW30NC120HD
schematic diagram induction heating
JESD97
W313
9915 H
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STGW30NC120HD
Abstract: GW30NC120HD JESD97 STGW30NC120HD ST
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
GW30NC120HD
JESD97
STGW30NC120HD ST
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PDF
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1200v 30A to247
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
1200v 30A to247
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PDF
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STGW30NC120HD ST
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
O-247
STGW30NC120HD ST
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HGTG30N120D2
Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
Text: HGTG30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL
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Original
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HGTG30N120D2
O-247
580ns
HGTG30N120D2
150oC.
AN7254
AN7260
HGTG20N100D2
717 MOSFET
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PDF
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600v 30a IGBT
Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGH30N120FTD
1200ut
FGH30N120FTD
600v 30a IGBT
FGH30N120FTDTU
IGBT 1200V 60A
IGBT 200A 1200V application induction heating
IGBT 60A 1200V
HIGH VOLTAGE DIODE for microwave ovens
igbt 600V 30A datasheet
I36 MARKING
igbt for HIGH POWER induction heating
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schematic diagram "induction heating"
Abstract: schematic diagram induction heating induction heating schematic schematic induction heating GW30NC120HD ic MARKING QG induction heating control circuit diagram schematic diagram for induction welding JESD97 STGW30NC120HD
Text: STGW30NC120HD N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH IGBT TARGET SPECIFICATION General features Type VCES STGW30NC120HD 1200V VCE sat (Max) @ 25°C < 2.8V • LOW ON-LOSSES ■ LOW ON-VOLTAGE DROP (Vcesat) ■ HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE
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STGW30NC120HD
O-247
schematic diagram "induction heating"
schematic diagram induction heating
induction heating schematic
schematic induction heating
GW30NC120HD
ic MARKING QG
induction heating control circuit diagram
schematic diagram for induction welding
JESD97
STGW30NC120HD
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30N120D2
Abstract: No abstract text available
Text: m a r i a HGTG30N120D2 s 30A, 1200V N-Channel IGBT A p ril 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The H G T G 30 N 1 20 D 2 is a M O S g ate d high vo lta g e sw itch in g
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HGTG30N120D2
O-247
580ns
30N120D2
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Untitled
Abstract: No abstract text available
Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200
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IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
IC110
204ns
O-263
O-247
30N120B3
0-06-09-A
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IXGH30N120B3
Abstract: ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns
Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200
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IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
IC110
204ns
O-263
O-247
O-220
30N120B3
IXGH30N120B3
ixgh30n120
G30N120B3
IXGA30N120B3
30n12
204ns
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30120CC
Abstract: No abstract text available
Text: RHRG30120CC fJi HARRIS S E M I C O N D U C T O R 30A, 1200V Hyperfast Dual Diode Aprii 1995 Features Package • Hyperfast with Soft Recovery . <65ns • Operating Tem perature. +175°C • Reverse V oltage. .1200V JEDEC STYLE TO-247
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RHRG30120CC
O-247
TA49041)
RHRG30120CC
M004I
30120CC
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP30N120C3 IXYH30N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXYP30N120C3
IXYH30N120C3
O-220
30N120C3
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXYH30N120C3D1
O-247
IF110
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12v 30a smps
Abstract: No abstract text available
Text: IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH30N120C3D1
IC110
O-247
IF110
062in.
12v 30a smps
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IXYP30N120C3
Abstract: No abstract text available
Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYP30N120C3
IXYH30N120C3
IC110
O-220
062in.
O-220
O-247
30N120C3
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Untitled
Abstract: No abstract text available
Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXYP30N120C3
IXYH30N120C3
IC110
O-220
O-247
30N120C3
4N-C91)
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