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    IXYH30N120C3D1 Price and Stock

    IXYS Corporation IXYH30N120C3D1

    IGBT 1200V 66A 416W TO247
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    DigiKey IXYH30N120C3D1 Tube 504 1
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    Mouser Electronics IXYH30N120C3D1 224
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    TTI IXYH30N120C3D1 Tube 300
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    IXYH30N120C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXYH30N120C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 66A 416W TO247 Original PDF

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    IXYH30N120C3D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110 062in. IXYH30N120C3D1

    Untitled

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXYH30N120C3D1 O-247 IF110

    12v 30a smps

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYH30N120C3D1 IC110 O-247 IF110 062in. 12v 30a smps