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    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
    Text: G30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL


    Original     		HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 717 MOSFET PDF

    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 G30N120D2
    Text: G30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original     		HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 G30N120D2 PDF