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    120 HZ IR PHOTODIODE Search Results

    120 HZ IR PHOTODIODE Result Highlights (5)

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    ADPD2140WBCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
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    ADPD2140BCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
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    120 HZ IR PHOTODIODE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS VCNL4000 Industry’s First Optical Sensor Combining an IR Emitter, PIN Photodiode, and Ambient Light Detector with 16-bit Resolution and I2C Interface FEATURES AND BENEFITS • Low profile surface-mount package: 3.95 mm x 3.95 mm x 0.75 H mm


    Original     		PDF VCNL4000 16-bit VMN-PT0251-1107

    3 mm ir receiver

    Abstract: s950 PIN photodiode 850 nm 850 photodiode 2 pin ir receiver Q62702-P3019 S850
    Text: SRD 00111Z Silicon PIN Photodiode in TO-Package • • • • • • • • • • • Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window 850 nm Suitable for bit rates up to 565 Mbit/s


    Original     		PDF 00111Z Q62702-P3019 3 mm ir receiver s950 PIN photodiode 850 nm 850 photodiode 2 pin ir receiver Q62702-P3019 S850

    GEO06861

    Abstract: OHFD1781 Q62702-P1646
    Text: 1.1 0.9 1.6 1.2 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BP 104 FS 0.2 0.1 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter Cathode lead feo06861 Photosensitive area 2.20 mm x 2.20 mm


    Original     		PDF feo06861 GEO06861 OHFD1781 OHF01778 OHF00082 OHF01402 GEO06861 OHFD1781 Q62702-P1646

    BPW 14 A

    Abstract: E9087 GEO06916 Q62702-P1829 P30120 BPW 34 FAS
    Text: Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BPW 34 FAS (E9087) Photosensitive area 2.65 mm x 2.65 mm feo06916 4.0


    Original     		PDF E9087) feo06916 GEO06916 E9087: OHF00080 OHF00081 OHF00082 OHF01402 BPW 14 A E9087 GEO06916 Q62702-P1829 P30120 BPW 34 FAS

    OHF01066

    Abstract: Q62702-P1602 GEO06863 120 Hz IR photodiode S8050 BPW 34 S
    Text: 1.1 0.9 1.8 1.4 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BPW 34 S 0.2 0.1 Silizium-PIN-Fotodiode Silicon PIN Photodiode Cathode lead feo06862 Photosensitive area 2.65 mm x 2.65 mm GEO06863 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF feo06862 GEO06863 OHF00080 OHF00081 OHF00082 OHF01402 OHF01066 Q62702-P1602 GEO06863 120 Hz IR photodiode S8050 BPW 34 S

    E9087

    Abstract: GEO06916 Q62702-P1826
    Text: Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BPW 34 FS (E9087) Photosensitive area 2.65 mm x 2.65 mm feo06916 4.0 3.7


    Original     		PDF E9087) feo06916 GEO06916 E9087: OHF00080 OHF00081 OHF00082 OHF01402 E9087 GEO06916 Q62702-P1826

    bpw 104

    Abstract: OHF00368 GEO06863 Q62702-P1604
    Text: Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BPW 34 FS Photosensitive area 2.65 mm x 2.65 mm feo06861 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 ±0.2


    Original     		PDF feo06861 GEO06863 OHF00080 OHF00081 OHF00082 OHF01402 bpw 104 OHF00368 GEO06863 Q62702-P1604

    GEO06972

    Abstract: Q62702-P1794 SFH2400
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 2400 SFH 2400 FA Vorläufige Daten / Preliminary Data 1.1 1.0 0.3 0.2 Chip position not connected 0.5 0.3 1.1 0.9 0.9 0.6 2.1 1.9 0.8 0.6 Active area 1x1 0.1 0.0 4.8 4.4 Cathode 2.7 2.5 Anode GEO06972 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GEO06972 OHF01026 OHF01402 OHF00331 GEO06972 Q62702-P1794 SFH2400

    OHFD0228

    Abstract: GEOY6972 SFH 2400FA
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 2400 SFH 2400FA SFH 2400 SFH 2400FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


    Original     		PDF 2400FA 2400FA) OHFD0228 GEOY6972 SFH 2400FA

    BP 104 FAS

    Abstract: No abstract text available
    Text: Silizium-Pin-Fotodiode mit Tageslichtsperrfilter Silicon Pin Photodiode with Daylight Filter Lead Pb Free Product - RoHS Compliant BP 104 FAS BP 104 FAS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen bei 880 nm • Kurze Schaltzeit (typ. 20 ns)


    Original     		PDF

    OHF00078

    Abstract: Q65110A2626 GEOY6861 J-STD-020B OHLA0687
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BP 104 S BP 104 S Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • Geeignet für Vapor-Phase Löten und


    Original     		PDF Q65110A2626 200any OHF00078 Q65110A2626 GEOY6861 J-STD-020B OHLA0687

    GEOY6861

    Abstract: Q62702-P1605 OHF00078
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode BP 104 S Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit typ. 20 ns • Geeignet für Vapor-Phase Löten und IR-Reflow-Löten • SMT-fähig


    Original     		PDF GEOY6861 GEOY6861 Q62702-P1605 OHF00078

    GEO06861

    Abstract: Q62702-P1605 OHF02283
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode BP 104 S Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit typ. 20 ns • Geeignet für Vapor-Phase Löten und IR-Reflow-Löten • SMT-fähig


    Original     		PDF OHF01402 GEO06861 GEO06861 Q62702-P1605 OHF02283

    Untitled

    Abstract: No abstract text available
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BP 104 S, BP 104 SR BP 104 SR BP 104 S Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns)


    Original     		PDF

    OHFD1781

    Abstract: OHF01430 Q65110A2672 GEOY6861 BP 104 FAS
    Text: Silizium-Pin-Fotodiode mit Tageslichtsperrfilter Silicon Pin Photodiode with Daylight Filter Lead Pb Free Product - RoHS Compliant BP 104 FAS BP 104 FAS (R18R) BP 104 FAS BP 104 FAS (R18R) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen bei 880 nm


    Original     		PDF

    GEO06861

    Abstract: Q62702-P1605
    Text: Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BP 104 S 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.6 ±0.2 Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF feo06862 GEO06861 OHF02284 OHF01778 OHF00082 OHF01402 GEO06861 Q62702-P1605

    Q62702-P1605

    Abstract: GEO06861
    Text: 1.1 0.9 1.6 1.2 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BP 104 S 0.2 0.1 Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF feo06862 GEO06861 OHF02284 OHF01778 OHF00082 OHF01402 Q62702-P1605 GEO06861

    BP 104 FAS

    Abstract: BP 104 FASR
    Text: Silizium-Pin-Fotodiode mit Tageslichtsperrfilter Silicon Pin Photodiode with Daylight Filter Lead Pb Free Product - RoHS Compliant BP 104 FAS BP 104 FASR BP 104 FAS BP 104 FASR Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


    Original     		PDF 1100nm BP 104 FAS BP 104 FASR

    sfh 206

    Abstract: 850 nm LED foto transistor S8050 TCI circuit Q62702-P129
    Text: SFH 206 K feo06647 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns


    Original     		PDF feo06647 OHF00078 OHF00394 OHF00082 OHF01402 sfh 206 850 nm LED foto transistor S8050 TCI circuit Q62702-P129

    Untitled

    Abstract: No abstract text available
    Text: 2007-04-12 2-Chip Silicon PIN Photodiode 2-fach-Silizium-PIN-Fotodiode Version 1.0 KOM 2125 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 25 ns • Suitable for SMT • Speziell geeignet für Anwendungen im Bereich von


    Original     		PDF D-93055

    Fotodiode

    Abstract: GEO06075 GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104FS BP104F
    Text: Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT BP 104 F BP 104 FS BP 104 F BP 104 FS Wesentliche Merkmale • Speziell geeignet für Anwendungen bei 950 nm • Kurze Schaltzeit typ. 20 ns • DIL-Plastikbauform mit hoher Packungsdichte


    Original     		PDF GEO06075 GEO06861 Fotodiode GEO06075 GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104FS BP104F

    bpw 104

    Abstract: GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F
    Text: 0.8 0.6 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 F BPW 34 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8


    Original     		PDF feo06075 feo06861 GEO06643 GEO06863 OHF00080 OHF00081 OHF00082 OHF01402 bpw 104 GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F

    feo06643

    Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
    Text: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm


    Original     		PDF feo06643 feo06862 GEO06643 GEO06863 OHF00080 OHF00081 OHF00082 OHF01402 feo06643 GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050

    Untitled

    Abstract: No abstract text available
    Text: 0 OPTEK Product Bulletin OP913SL June 1996 PIN Silicon Photodiodes Types OP913SL, OP913WSL Features Reverse Voltage. 32 V Storage Temperature Range. -65°C to +150° C


    OCR Scan     		PDF OP913SL OP913SL, OP913WSL