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    12 VOLTS CIRCUIT USING MOSFET Search Results

    12 VOLTS CIRCUIT USING MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    12 VOLTS CIRCUIT USING MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ferroxcube 3C8

    Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


    Original     		PDF U-127 UC3724/UC3725, U-110 U-126 Ferroxcube 3C8 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg

    Ferroxcube 3C8

    Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


    Original     		PDF U-127 UC3724/UC3725, Ferroxcube 3C8 U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    Untitled

    Abstract: No abstract text available
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2

    AO6601

    Abstract: 30V vgs
    Text: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6601 AO6601 30V vgs

    Untitled

    Abstract: No abstract text available
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SOIC−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2 NTMD2C02R2/D

    AN569

    Abstract: MMDF2C01HD MMDF2C01HDR2 D2C01 MiniMOS
    Text: MMDF2C01HD Preferred Device Power MOSFET 2 Amps, 12 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–


    Original     		PDF MMDF2C01HD r14525 MMDF2C01HD/D AN569 MMDF2C01HD MMDF2C01HDR2 D2C01 MiniMOS

    AN569

    Abstract: MMDF3C03HD MMDF3C03HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


    Original     		PDF MMDF3C03HD/D MMDF3C03HD AN569 MMDF3C03HD MMDF3C03HDR2 SMD310

    TRANSISTOR LWW 20

    Abstract: TRANSISTOR LWW 17
    Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17

    AN569

    Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2
    Text: MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–


    Original     		PDF MMDF2C02HD r14525 MMDF2C02HD/D AN569 D2C02 MMDF2C02HD MMDF2C02HDR2

    d2c03

    Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs


    Original     		PDF MMDF2C03HD/D MMDF2C03HD MMDF2C03HD/D* d2c03 AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes

    AO4606

    Abstract: No abstract text available
    Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of


    Original     		PDF AO4606 AO4606

    Untitled

    Abstract: No abstract text available
    Text: MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C02HD MMDF2C02HD/D

    AO4606

    Abstract: Complementary
    Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of


    Original     		PDF AO4606 AO4606 Complementary

    d6n02

    Abstract: MMDF6N02HDR2 AN569 MMDF6N02HD
    Text: MMDF6N02HD Preferred Device Power MOSFET 6 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power


    Original     		PDF MMDF6N02HD r14525 MMDF6N02HD/D d6n02 MMDF6N02HDR2 AN569 MMDF6N02HD

    AN569

    Abstract: MMSF10N02Z MMSF10N02ZR2
    Text: MMSF10N02Z Preferred Device Power MOSFET 10 Amps, 20 Volts N–Channel SO–8 EZFETst are an advanced series of Power MOSFETs which contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These


    Original     		PDF MMSF10N02Z r14525 MMSF10N02Z/D AN569 MMSF10N02Z MMSF10N02ZR2

    t12n10

    Abstract: NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die
    Text: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V


    Original     		PDF NTD12N10 r14525 NTD12N10/D t12n10 NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die

    T2-955V

    Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
    Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		PDF MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C

    AO4616

    Abstract: 20V P-Channel Power MOSFET 500A
    Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4616 AO4616 20V P-Channel Power MOSFET 500A

    aotf12n50

    Abstract: No abstract text available
    Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N50/AOB12N50/AOTF12N50 AOT12N50 AOB12N50 AOTF12N50 AOT12N50L AOTF12N50L AOB12N50L O-220 O-220F O-263

    AO6604

    Abstract: No abstract text available
    Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AO6604 AO6604

    AO6602

    Abstract: uis test
    Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6602 AO6602 uis test

    T2955V

    Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
    Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original     		PDF MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel

    68HC24

    Abstract: 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB
    Text: by AN1102/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1102 Interfacing Power MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE CHARACTERISTICS Power M OSFETs are commonly used in switching applica­ tions due to their fast switching speeds and low static losses.


    OCR Scan     		PDF AN1102/D AN1102 25178T AN1102/D 68HC24 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB