Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    11B2* DIODE Search Results

    11B2* DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    11B2* DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R7411 2A

    Abstract: PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100
    Text: 8 6 7 5 2 3 4 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? DATE ? SCHEM,LIO/AUDIO ,MacBook Pro 15"


    Original
    PDF U8300 U8301 U8405 U8415 U8450 XW6800 XW7200 XW7300 XW7301 XW7310 R7411 2A PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100

    SO56-2

    Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
    Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay


    Original
    PDF IDTQS316212 24-BIT 56-pin QS316212 12-bit O56-1) SO56-2 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2

    ZP80

    Abstract: 11B2 Diode motorola diode ZP PI3LVD812 diode 6b1 10B1 10B2 11B1 11B2 12B1
    Text: PI3LVD812 3.3V, 8-differential Channel Dual-LVDS Switch Targeted for 18-bit Displays Features Description • Designed specifically to switch Dual-LVDS signals • Full switch for 6-differential LVDS data signals and 2 differential LVDS clock signals • VDD = 3.3V ±10%


    Original
    PDF PI3LVD812 18-bit -55dB 80-pin PI3LVD812 PS9034A 5X11mm ZP80 11B2 Diode motorola diode ZP diode 6b1 10B1 10B2 11B1 11B2 12B1

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original
    PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original
    PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil

    18b2 diode

    Abstract: DIODE 15B2 PI3LVD1012 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original
    PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil 18b2 diode DIODE 15B2 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2

    10B1

    Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
    Text: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs


    Original
    PDF QS3165233 56-pin QS3165233 32-bit 16-bit QS316233 QS3162233 MDSL-00245-01 10B1 10B2 12B1 12B2 16B1 16B2 DIODE 15B2

    1Bn-12Bn

    Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
    Text: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original
    PDF QS316212, QS3162212 24-Bit QS316212 56-pin QS3162212 QS316212 1Bn-12Bn diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1

    5a2 DIODE

    Abstract: No abstract text available
    Text: SN74CBTS16212 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS036B – DECEMBER 1997 – REVISED MAY 1998 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D Latch-Up Performance Exceeds 250 mA Per D D DGG, DGV, OR DL PACKAGE


    Original
    PDF SN74CBTS16212 24-BIT SCDS036B MIL-STD-833, 300-mil 5a2 DIODE

    Untitled

    Abstract: No abstract text available
    Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH FEATURES: • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay


    Original
    PDF IDTQS316212 24-BIT QS316212 12-bit

    DIODE 10B3

    Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
    Text: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC


    Original
    PDF QS316214, QS3162214 12-Bit QS316214 QS3162214 56-pin QS316214 DIODE 10B3 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 1A12A

    1562B

    Abstract: No abstract text available
    Text: IDTQS316233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX FEATURES: • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs


    Original
    PDF IDTQS316233 QS316233 32-bit 16-bit 1562B

    10B1

    Abstract: 10B2 12B1 12B2 QS3162233 QS316233
    Text: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original
    PDF QS316233, QS3162233 QS316233 56-pin QS3162233 QS316233 QS3162233, 32-bit 16-bit 10B1 10B2 12B1 12B2

    TSSOP IA2

    Abstract: 5a1 DIODE 9b2 diode 10A1 10A2 11A1 11A2 QS316213 IA2 TSSOP-20
    Text: QS316213, QS3162213 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch With iA1 = iA2 = iB2 Function Q QUALITY SEMICONDUCTOR, INC. QS316213 QS3162213 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original
    PDF QS316213, QS3162213 24-Bit QS316213 56-pin QS3162213 QS316213 TSSOP IA2 5a1 DIODE 9b2 diode 10A1 10A2 11A1 11A2 IA2 TSSOP-20

    10A1

    Abstract: 10B1 11A1 12A1 QS316292 diode 10b1 11B2 Diode
    Text: QS316292, QS3162292 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 12-Bit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side QS316292 QS3162292 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC


    Original
    PDF QS316292, QS3162292 12-Bit QS316292 56-pin QS316292 QS3162292 10A1 10B1 11A1 12A1 diode 10b1 11B2 Diode

    10A1

    Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS316212 QS316212 SO56-2
    Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay


    Original
    PDF IDTQS316212 24-BIT 56-pin QS316212 12-bit O56-1) 10A1 10A2 11A1 11A2 12A1 12A2 IDTQS316212 SO56-2

    523a6

    Abstract: 10B1 10B2 10B3 11B1 11B3 IDTQS316214 QS316214 9b3 diode 12b3 diode
    Text: IDTQS316214 HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH FEATURES: • • • • • • IDTQS316214 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc


    Original
    PDF IDTQS316214 12-BIT QS316214 523a6 10B1 10B2 10B3 11B1 11B3 IDTQS316214 9b3 diode 12b3 diode

    11B2* Diode

    Abstract: 11b3 DIODE 11B2 Diode
    Text: G E SOLI» -DI STATE DE|3ñ?SDñl 0 O I T 710 1 | Optoelectronic Specifications T ^ J'5 5 Photon Coupled Isolator H11B1,H11B2,H11B3 SYMJUL Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H 11B1, H 11B2 and H 11B3 are gallium arsenide,


    OCR Scan
    PDF H11B1 H11B2 H11B3 E51868 0110b H11B1, H11B2, 11B2* Diode 11b3 DIODE 11B2 Diode

    H11B

    Abstract: No abstract text available
    Text: MOTOROLA SC DI O D ES /O PT O b 3 b 7 ESS DüûbbH? b 4E D 1 3 fl MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VDE UL C SA SETI ® SEMKO OEMKO BS NEM KO BABT H11B1* H 11B2* H11B3 [C TR = 500% Min] 6-Pin DIP Optoisolators Darlington Output (Low Input Current)


    OCR Scan
    PDF H11B1, H11B2 H11B3 H11B1* H11B3 b3b7255 H11B2, H11B

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,


    OCR Scan
    PDF 43QE271 G027172 H11B1 H11B2 H11B3 S-42662 92CS-429S1

    H11B1

    Abstract: H11B2 VDE0160 VDE0832 VDE0833
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­


    OCR Scan
    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 H11B1 H11B2 VDE0160 VDE0832 VDE0833

    11B2 Diode

    Abstract: 7b246
    Text: f ¡J PERICOM 16-Bit to 32-Bit, Demux PCI Hot-Plug Bus Switch with -1.5V Undershoot Protection Product Features Product Description • R on is 5Q typical Pericom Semiconductor’s PI5C series of logic circuits are produced in the Company’s advanced sub-micron CMOS technology,


    OCR Scan
    PDF 16-Bit 32-Bit, PI5C32160C 32-bit of250ps, 32160CA 56-TSSO 240-mil PS8362A 11B2 Diode 7b246

    1431 transistor equivalent

    Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA20 1431 transistor equivalent MCA255

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce


    OCR Scan
    PDF QS316233 QS3162233 QS316233 QS3162233, 32-bit 16-bit QS3162233