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    H11B Price and Stock

    Rochester Electronics LLC H11B3

    DARLINGTON OUTPUT OPTOCOUPLER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11B3 Tube 4,662 2,664
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    • 10000 $0.11
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    Isocom Components H11B1SM

    OPTOISO 5.3KV DARL W/BASE 6SMD
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    DigiKey H11B1SM Tube 3,240 1
    • 1 $0.67
    • 10 $0.439
    • 100 $0.2878
    • 1000 $0.2878
    • 10000 $0.20453
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    Verical H11B1SM 29,900 2,990
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    • 10000 $0.207
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    H11B1SM 4,970 423
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    Arrow Electronics H11B1SM 4,970 2 Weeks 423
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    • 1000 $0.2362
    • 10000 $0.2014
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    NAC H11B1SM Tube 2,990
    • 1 $0.285
    • 10 $0.285
    • 100 $0.285
    • 1000 $0.285
    • 10000 $0.192
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    PanJit Group PZ1AH11B-AU_R1_000A1

    SILICON ZENER DIODE
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    DigiKey PZ1AH11B-AU_R1_000A1 Cut Tape 2,465 1
    • 1 $0.41
    • 10 $0.293
    • 100 $0.1476
    • 1000 $0.10181
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    Isocom Components H11B2

    6PIN DARLINGTON OUTPUT, SINGLE,
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    DigiKey H11B2 Tube 2,208 1
    • 1 $0.62
    • 10 $0.53
    • 100 $0.49492
    • 1000 $0.31108
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    Verical H11B2 29,900 2,990
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    NAC H11B2 Tube 2,990
    • 1 $0.266
    • 10 $0.266
    • 100 $0.266
    • 1000 $0.266
    • 10000 $0.1792
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    onsemi H11B1VM

    OPTOISO 4.17KV DARL W/BASE 6DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11B1VM Tube 1,112 1
    • 1 $1.03
    • 10 $1.03
    • 100 $0.4824
    • 1000 $0.36509
    • 10000 $0.33119
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    Avnet Americas H11B1VM Bulk 10 Weeks 2,000
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    Mouser Electronics H11B1VM 389
    • 1 $1.03
    • 10 $0.652
    • 100 $0.483
    • 1000 $0.365
    • 10000 $0.331
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    Find more H11B price and stock on Findchips.com

    H11B Datasheets (218)

    Part ECAD Model Manufacturer Description Curated Type PDF
    H11B1 Everlight Electronics Isolators - Optoisolators - Transistor, Photovoltaic Output - OPTOISO 5KV DARL W/BASE 6DIP Original PDF
    H11B1 Fairchild Semiconductor Photodarlington Optocoupler Original PDF
    H11B1 Fairchild Semiconductor 6-Pin DIP Photodarlington Output Optocoupler Original PDF
    H11B1 Infineon Technologies Optocoupler, 6 Pin, Sngl, 500% CTR, Photodarlington Original PDF
    H11B1 Isocom Components 5V 80mA optically coupled isolator photodarlington output Original PDF
    H11B1 Micro Commercial Components Pd=500mW, Vz=10.4V zener diode Original PDF
    H11B1 On Semiconductor IC OPTOCOUPL DC-IN 1-CH DARL W/BASE DC-OUT LO IF 6DIP Original PDF
    H11B1 Opto 6 Pin, DIP, Photodarlington Detector w/ Base CTR 500 min @ 1mA, 5V Optocoupler Original PDF
    H11B1 Philips Semiconductors Optocouplers Original PDF
    H11B1 QT Optoelectronics PHOTODARLINGTON OPTOCOUPLERS Original PDF
    H11B1 Siemens PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11B1 Vishay Semiconductors Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV DARL W/BASE 6DIP Original PDF
    H11B1 Vishay Siliconix Optocouplers Original PDF
    H11B1 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Photo Transistor Output, 5.3kV, 25V Min. BV CEO Scan PDF
    H11B1 Fairchild Semiconductor Optoelectronics Data Book 1979 Scan PDF
    H11B1 Fairchild Semiconductor Optoelectronics Data Book 1980 Scan PDF
    H11B1 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    H11B1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H11B1 General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. Scan PDF
    H11B1 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    ...

    H11B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    optocouplers 501 IC

    Abstract: TIL113 CNX48U
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


    Original     		PDF CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 optocouplers 501 IC

    H11BX

    Abstract: CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 MOC8080 TIL113
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


    Original     		PDF CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 H11BX CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3

    E91231

    Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
    Text: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18


    Original     		PDF H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 E91231 ins50 DB92167-AAS/A2 E91231 H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X

    Untitled

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


    Original     		PDF CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255

    H11B1

    Abstract: H11B2 H11B3
    Text: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with


    Original     		PDF H11B1/H11B2/H11B3 H11B1, H11B2, H11B3, E52744 H11B1/H11B2/H11B3 17-August-01 H11B1 H11B2 H11B3

    datasheet 4n29 optocoupler

    Abstract: til113 4N29M 4N30M 4N32M 4N32SM 4N32SR2M 4N33M H11B1M TIL113M
    Text: 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.


    Original     		PDF 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M datasheet 4n29 optocoupler til113 4N29M 4N30M 4N32M 4N32SM 4N32SR2M 4N33M H11B1M TIL113M

    optocoupler H11b1

    Abstract: H11B1-X007 H11B1 H11B1-X009 H11B2 H11B2-X009 H11B3
    Text: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC


    Original     		PDF H11B1, H11B2, H11B3 2002/95/EC 2002/96/EC i179005 UL1577, E52744 optocoupler H11b1 H11B1-X007 H11B1 H11B1-X009 H11B2 H11B2-X009 H11B3

    DIN EN 50014 STANDARD

    Abstract: H11B1 H11B1-X007 H11B2 H11B3 VDE0884
    Text: H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF H11B1/ H11B2/ H11B3 2002/95/EC 2002/96/EC UL1577, E52744 i179005 VDE0884) H11B1 DIN EN 50014 STANDARD H11B1 H11B1-X007 H11B2 H11B3 VDE0884

    Untitled

    Abstract: No abstract text available
    Text: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC


    Original     		PDF H11B1, H11B2, H11B3 2002/95/EC 2002/96/EC i179005 UL1577, E52744

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Lead Pb -free component A 1 6 B C 2 5 C NC 3 4 E • Component in accordance to RoHS 2002/95/EC


    Original     		PDF H11B1/H11B2/H11B3 2002/95/EC 2002/96/EC i179005 H11B1/H11B2/H11B3 UL1577, E52744 VDE0884) H11B1 H11B2

    optocouplers 501

    Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


    Original     		PDF CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 optocouplers 501 H11BX CNX48U H11B1 H11B255 optocouplers 501 IC H11B2 H11B3

    a140mW

    Abstract: H11B815 4pin diode
    Text: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA


    Original     		PDF H11B815 H11B815 E90700) 00029A a140mW 4pin diode

    PS2004B

    Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
    Text: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80


    OCR Scan     		PDF PS2004B PS2014 MFCD850 H11B1 H11B2 MCA230 MCA231 MCA255 TIL113 TIL119 PS2004B PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860

    Untitled

    Abstract: No abstract text available
    Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.


    OCR Scan     		PDF H11B1 H11B2 H11B3 H1181 H11B3 E90700 ST1603A H11B1) H11B2)

    H11B255

    Abstract: No abstract text available
    Text: G E SOLID STATE DE ^3875001 Û 0 M 7 1 5 5 | 01 Optoelectronic Specifications i Photon Coupled Isolator H11B255 SYM30L Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H 11B255 consists of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington amplifier in a dual in-line package. This device is


    OCR Scan     		PDF H11B255 UB255 H11B255

    H11B255

    Abstract: sot-90B OPTOCOUPLER dc
    Text: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio


    OCR Scan     		PDF H11B255 0110b 7Z94797A H11B255 sot-90B OPTOCOUPLER dc

    switch H11B

    Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
    Text: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3-100 E90700 JI2-54! ST1603A ST1723 switch H11B optocouplers H11B1 ST1736 H11B ST1723

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­


    OCR Scan     		PDF H11B1 H11B2 H11B3 E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 30A-02

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also


    OCR Scan     		PDF H11B255 IB255 60apacitance 100STÌ

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR M in im u m at l F = 1 m A H 1 1 B 1 ,500% H11 B 2 ,2 0 0 % PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm I?1 Ù ] f?l Anode [ E .248(6.30) 256 (6.50) J D Base i Cathode (~2 _ J H 1 1 B 3 ,100%, * W ith s ta n d T e s t V o lta g e , 7500 V o lt


    OCR Scan     		PDF E52744 11B1/H11B2/H1183 H11B1/2/3

    FF 030 PK

    Abstract: led ir Darlington pair IC schematic 4n33 schematic H11B1 H11G1 H11G2 H11G3 H24B1 H24B3
    Text: ISOCOM COMPONENTS Photo Darlington With Base Lead Part N u m b er Fea tu res Iso la tio n V o lta g e VDC C u rren t T ra n s fe r R a tio M in % H11B1 M C A255 IS662 Ir = lO fiA M a x (V ) (D ark) VcE(Sat) M ax (v) V ce = 1 0 V ( lc = ( lc = 1000 1m A )


    OCR Scan     		PDF 10jiA H11B1 MCA255 IS660 100mA) IS661 IS662 H11G1 H11G2 FF 030 PK led ir Darlington pair IC schematic 4n33 schematic H11G1 H11G2 H11G3 H24B1 H24B3

    H11B1

    Abstract: H11B2 VDE0160 VDE0832 VDE0833
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 H11B1 H11B2 VDE0160 VDE0832 VDE0833

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specificatio ns_ H11B1, H11B2, H11B3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H 11B 1, H I1 B 2 a n d H 11B 3 are g alliu m a rsen id e, infrared e m ittin g d io d es c o u p le d w ith a s ilic o n p h o to -D a rlin g to n a m p lifier in


    OCR Scan     		PDF H11B1, H11B2, H11B3 E51868 0110b H11B3