resistor 1k
Abstract: 1K resistor 1W datasheet panasonic ceramic capacitor 16TPB47M AN1130 SM0603 1K resistor datasheet P13 SOT Resistor 120K S9001
Text: Using the ISL6402, ISL6402A Evaluation Board Application Note Using the Evaluation Board The ISL6402 and ISL6402A are high performance tripleoutput controllers offering control and protection features for 2 synchronous buck PWMs and 1 linear regulator.
|
Original
|
PDF
|
ISL6402,
ISL6402A
ISL6402
ISL6402EVAL4
ISL6402IR
ISL6402AEVAL4
ISL6402AIR
resistor 1k
1K resistor 1W datasheet
panasonic ceramic capacitor
16TPB47M
AN1130
SM0603
1K resistor datasheet
P13 SOT
Resistor 120K
S9001
|
FX20S
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
|
Original
|
PDF
|
FX20SMJ-03
FX20S
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20VSJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5
|
Original
|
PDF
|
FX20VSJ-03
|
fx20umj-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20UMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20UMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0
|
Original
|
PDF
|
FX20UMJ-03
fx20umj-03
|
FX20KMJ-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
|
Original
|
PDF
|
FX20KMJ-03
FX20KMJ-03
|
FX20ASJ-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20ASJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20ASJ-03 OUTLINE DRAWING 1.0 2.3 2.3 10 max 2.3 min 1.0 max 5.5 ± 0.2
|
Original
|
PDF
|
FX20ASJ-03
FX20ASJ-03
|
2sk4005
Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321
|
Original
|
PDF
|
2SK301
2SK302
2SK303
2SK304
2SK308
2SK309
2SK310
2SK311
2SK312
2SK313
2sk4005
2SK385
2SK332
2SK339
2SK309
2SK400
2SK336
2SK386
2sk317
2SK354
|
fan 7320
Abstract: FLT 60-400 TSH124 5760 sop16 1N4148 ATS177 HW-101A KTA1270 QSOP16 SOIC16
Text: aMC8500 Preliminary Specification TWO PHASE VARIABLE SPEED FAN MOTOR CONTROLLER PRODUCT SPECIFICATION The aMC8500 is a full featured monolithic brushless DC motor controller containing all the required functions to implement fan speed control. This device features a
|
Original
|
PDF
|
aMC8500
aMC8500
70A04018
fan 7320
FLT 60-400
TSH124
5760 sop16
1N4148
ATS177
HW-101A
KTA1270
QSOP16
SOIC16
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2734GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2734GR is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. 8 5 1, 2, 3
|
Original
|
PDF
|
PA2734GR
PA2734GR
|
FX20KMJ-03-A8
Abstract: FX20KMJ-03
Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
|
Original
|
PDF
|
FX20KMJ-03
REJ03G0259-0100
O-220FN
FX20KMJ-03-A8
FX20KMJ-03
|
FX20KMJ-03
Abstract: FX20KMJ-03-A8
Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
|
Original
|
PDF
|
FX20KMJ-03
REJ03G0259-0100
O-220FN
FX20KMJ-03
FX20KMJ-03-A8
|
Hitachi DSA002759
Abstract: No abstract text available
Text: HAT2026R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-523 B 3rd. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT2026R Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
HAT2026R
ADE-208-523
Hitachi DSA002759
|
Hitachi DSA002719
Abstract: No abstract text available
Text: HAT2026R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-523 B 3rd. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT2026R Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
HAT2026R
ADE-208-523
Hitachi DSA002719
|
marking W26 sot23
Abstract: transistor w26 sot23 transistor marking w26 marking CODE w26
Text: Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS V Rds(on) (ȍ) 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V -20 0.086@ VGS=̢1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced
|
Original
|
PDF
|
WPM2026
OT-23
WPM2026
marking W26 sot23
transistor w26
sot23 transistor marking w26
marking CODE w26
|
|
|
smd 1C
Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V
|
Original
|
PDF
|
KDS8928A
smd 1C
1c smd transistor
1b smd transistor
SMD Transistor nc
KDS8928A
SMD Transistor 1c
1130 pch
Dual N & P-Channel MOSFET
|
SI7135DP
Abstract: si7135
Text: SPICE Device Model Si7135DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si7135DP
18-Jul-08
si7135
|
ADE-208-513
Abstract: den10 DA1134
Text: 2SK2800 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistarice Rds«.„i = 15 m i3 lyp • H ig h sp eed s w itch in g • L o w d rive cu rren t • 4 V gate drive d e v ic e can be driv en from 5 V source O utline 1130
|
OCR Scan
|
PDF
|
2SK2800
ADE-208-513
10jas,
den10
DA1134
|
FX6VSJ-03
Abstract: fx6vsj-06 TO-220FN FX6VSJ06 FX30UMJ03 FX30KMJ-06 fx50smj
Text: < W E R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S t l O f t F O T IT Ì D â t S Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device
|
OCR Scan
|
PDF
|
FX6ASJ-03
FX6KMJ-03
O-220FN
FX6UMJ-03
O-220
FX6VSJ-03
O-220S
FX20ASJ-03
FX20KMJ-03
fx6vsj-06
TO-220FN
FX6VSJ06
FX30UMJ03
FX30KMJ-06
fx50smj
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20SMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm .4.5. 1.5 ter ¿I Q • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130
|
OCR Scan
|
PDF
|
FX20SMJ-03
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130
|
OCR Scan
|
PDF
|
FX20KMJ-03
O-220FN
|
RFD8P05SM
Abstract: No abstract text available
Text: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI
|
OCR Scan
|
PDF
|
4302E71
PCF8P05W
MII-Std-750,
RFD8P05
RFD8P05SM
RFP8P05
PCF8P05D
1-800-4-HARRIS
|
891L
Abstract: No abstract text available
Text: 19-1223: Rev0:4/97 V M yJX IV M Current-Limited, High-Side P-Channei Switches with Thermmi Shutdown The MAX891L/MAX892L’s maximum current limits are 500m A and 250mA, resp ective ly. The cu rre n t lim it through the switch is programmed with a resistor from
|
OCR Scan
|
PDF
|
13jiA
MAX891L)
MAX892L)
MAX891L/MAX892L
100kfl
891L
|
IRF9530 Harris
Abstract: No abstract text available
Text: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)
|
OCR Scan
|
PDF
|
PCF12P10W
PCF12P10D
MII-Std-750,
RFP12P10
IRF9530
IRF9130
2N6849
PCF12P10D
1-800-4-HARRIS
IRF9530 Harris
|
Untitled
Abstract: No abstract text available
Text: 19-1223; Rev O; 4/97 > k i y i x i > k i Current-Limited, High-Side P-Channe! Sw itches with Therm al Shutdown Genera! Description The MAX891L/MAX892L's maximum current limits are 500mA and 250mA, respectively. The current limit through the switch is programmed with a resistor from
|
OCR Scan
|
PDF
|
MAX891L/MAX892L
500mA
250mA,
5fl7bb51
|
