Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    110NM Search Results

    SF Impression Pixel

    110NM Price and Stock

    Mini-Circuits 141-10NM+

    HFLEX BL CA NM/NM 10" ROHS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 141-10NM+ Bag 19 1
    • 1 $32.65
    • 10 $32.484
    • 100 $31.8125
    • 1000 $31.8125
    • 10000 $31.8125
    		Buy Now
    Mouser Electronics 141-10NM+ 39
    • 1 $33.64
    • 10 $33.46
    • 100 $32.94
    • 1000 $32.94
    • 10000 $32.94
    		Buy Now

    Mini-Circuits 141-10NM-

    HFLEX BL CA NM/NM 10" ROHS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 141-10NM- Bag 10 1
    • 1 $32.65
    • 10 $32.484
    • 100 $31.8125
    • 1000 $31.8125
    • 10000 $31.8125
    		Buy Now

    Gedore Torque Ltd CAPTURE SENSOR 1-10NM

    Capture Sensor, 1-10N-M; Torque Range N-M:1N-M To 10N-M; Torque Range Ft-Lb:-; Accuracy %:-; Product Range:-; Svhc:No Svhc (15-Jan-2018) Rohs Compliant: Yes |Gedore CAPTURE SENSOR 1-10NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark CAPTURE SENSOR 1-10NM Bulk 1
    • 1 $2129.11
    • 10 $2129.11
    • 100 $2129.11
    • 1000 $2129.11
    • 10000 $2129.11
    		Buy Now

    ams OSRAM Group Q65113A7342

    Photodiodes FOR VITAL SIGNAL MONITORING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI Q65113A7342 Reel 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.339
    		Buy Now

    CDM SIGNAL STORM CABLES CDM-900C/NMC2/110/NMC2

    LMR-900-FR Jumper NMC2-NMC2 110FT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    CDM Electronics CDM-900C/NMC2/110/NMC2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 110NM price and stock on Findchips.com

    110NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VDC048

    Abstract: No abstract text available
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 29, 2008 Obsolescence Notification No: Subject: 2708 Obsolescence of the Discrete S29NS128J Products Spansion LLC is announcing the obsolescene of the 110nm, 1.8V Burst Mode Floating Gate NOR


    Original     		PDF S29NS128J 110nm, S29NS128J0LBFW000 S29NS128J0LBJW000 S29NS128J0PBFE000 S29NS128J0LBFW003 S29NS128J0LBJW003 S29NS128J0PBJW000 VDC048 VDC048

    SPANSION gl512p FLASH

    Abstract: GL256P GL512P GL128P SPANSION gl512p S29GL-P spansion S29GL128 S29GL256 GL01GP S29GL01G
    Text: S29GL-N to S29GL-P Migration Migrating from S29GL-N 110 nm to S29GL-P (90 nm) Application Note 1. Introduction This application note has been developed to guide customers currently using the S29GL-N 110nm MirrorBit products to migrate to the S29GL-P 90nm MirrorBit products. This document outlines some of the similarities


    Original     		PDF S29GL-N S29GL-P S29GL-N S29GL-P 110nm SPANSION gl512p FLASH GL256P GL512P GL128P SPANSION gl512p spansion S29GL128 S29GL256 GL01GP S29GL01G

    Untitled

    Abstract: No abstract text available
    Text: NT1GD72S4PB0FU 1GB PC2700 and PC2100 Registered DDR DIMM 184 pin Registered DDR DIMM Based on DDR333/266 512M bit B Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Differential clock inputs • Registered DDR DIMM based on 110nm 512M bit die B device,


    Original     		PDF NT1GD72S4PB0FU PC2700 PC2100 DDR333/266 110nm 128Mx4

    S29VS064R

    Abstract: S29NS016J0LBJW003 gate nor GWJ725 VDE044 S29VS064
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA February 19, 2009 Obsolescence Notification No: Subject: 2749 Obsolescence of the Discrete S29NS016J Products Spansion LLC is announcing the obsolescence of the 110nm, 1.8V Burst Mode Floating Gate NOR


    Original     		PDF S29NS016J 110nm, S29NS016J0LBFW000, S29NS016J0LBFW000# S29NS016J0LBFW000A, S29NS016J0LBFW003, S29NS016J0LBJW000, S29NS016J0LBJW000# S29NS016J0LBJW000A, S29VS064R S29NS016J0LBJW003 gate nor GWJ725 VDE044 S29VS064

    S29AS016J70TFI010

    Abstract: S29AS016J70 AS-016 vbk048 S29AS016J70BFI010E S29AS016J70BFI AS016J TS048 S29AS016J70TFI
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA July 29, 2010 Obsolescence Notification No: Subject: 2804 Obsolescence of the AS016J Packaged Products with the Model Numbers 01 or 02 Spansion LLC is announcing the obsolescence of the 110nm, 1.8V Floating Gate NOR AS016J


    Original     		PDF AS016J 110nm, AS016J TS048, VBK048 S29AS016J70BFI010 S29AS016J70BFI010E S29AS016J70BFI020 S29AS016J70TFI010 S29AS016J70 AS-016 vbk048 S29AS016J70BFI010E S29AS016J70BFI TS048 S29AS016J70TFI

    DDR333

    Abstract: NT2GD72S4PB0FU-6K PC2100 PC2700
    Text: NT2GD72S4NB0FU and NT1GD72S4PB0FU 2GB and 1GB PC2700 and PC2100 Registered DDR DIMM 184 pin Registered DDR DIMM Based on DDR333/266 512M bit B Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Differential clock inputs • Registered DDR DIMM based on 110nm 512M bit die B device,


    Original     		PDF NT2GD72S4NB0FU NT1GD72S4PB0FU PC2700 PC2100 DDR333/266 110nm 128Mx4 DDR333 NT2GD72S4PB0FU-6K PC2100

    Memory Interfaces

    Abstract: DDR PHY ASIC ARM926EJ-S PBGA420 spear linux
    Text: SPEAr Head digital engine TM Powerful, customizable, ARM-based SoC with large connectivity IP portfolio and memory interfaces SPEAr Head from STMicroelectronics is a powerful digital engine on 110nm HCMOS technology consisting of two main parts: an ARM-based architecture and an embedded


    Original     		PDF 110nm ARM926EJ-S FLSPEARHEAD1105 Memory Interfaces DDR PHY ASIC ARM926EJ-S PBGA420 spear linux

    ADQ12

    Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
    Text: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM


    Original     		PDF S72NS-N 110nm 128/256-Mb 8/16-M 16-bit) S72NS128 256ND0 ADQ12 ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N 7d8l S72NS512ND0

    MX25L1633E

    Abstract: MX25L1635D Macronix* MX25L1633E MXIC serial Flash MX25L163 AN072 MX25L* 86 MHz mx25l1633 MXIC MX
    Text: APPLICATION NOTE Migrating to MX25L1633E from MX25L1635D 1. Introduction Macronix recently introduced the MX25L1633E family of product, based on the latest generation 110nm process technology, to replace MX25L1635D. This Application Note provides a comparison between the two products.


    Original     		PDF MX25L1633E MX25L1635D 110nm MX25L1635D. MX25L1633E, MX25L1635D Macronix* MX25L1633E MXIC serial Flash MX25L163 AN072 MX25L* 86 MHz mx25l1633 MXIC MX

    S71GL064NB0BHW0Z0

    Abstract: S71GL064NB0BHW0U0 S71GL064N S71GL064NB0BH S71GL064NB0BHW S71GL064NB0B preventive TSC056 S71GL064NB0 S71GL064NB0BHW0Z
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 01, 2008 Obsolescence Notification No: Subject: 2739 Obsolescence of the 110nm, 3.0V MirrorBit Flash Memory products listed below Spansion LLC is announcing the discontinuation of the following products. See below for details:


    Original     		PDF 110nm, S71GL064NB0BFW0U0 S71GL064NB0BFW0Z0 S71GL064NB0BFW0Z3 S71PL129NB0HFW4U0 TLA064, TSC056, TLC056 S71GL064NB0BHW0U0 S71GL064NB0BHW0Z0 S71GL064NB0BHW0U0 S71GL064N S71GL064NB0BH S71GL064NB0BHW S71GL064NB0B preventive TSC056 S71GL064NB0 S71GL064NB0BHW0Z

    s29al016j70

    Abstract: AL008J s29al008j70 S29AL016J70TF s29al008j70tf S29AL008J70TFI030 s29al016j70tfi s29al008j70tfi al016j S29AL016J
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA May 10, 2010 Obsolescence Notification No: Subject: 2792 Obsolescence of the AL008J and AL016J Products with the Model Numbers 03 or 04 Spansion LLC is announcing the obsolescence of the 110nm, 3.0V Floating Gate NOR AL008J and


    Original     		PDF AL008J AL016J 110nm, 98H21A, 98K38A 98H21B, s29al016j70 s29al008j70 S29AL016J70TF s29al008j70tf S29AL008J70TFI030 s29al016j70tfi s29al008j70tfi S29AL016J

    s98gl128pb0hw0210

    Abstract: S71PL127NB0HHW4 S71PL127NB0HFW4U semiconductors replacement guide S71PL127NB0HHW4U s98gl S71PL127NB TSB064 S71PL127NB0HFW4U0
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 17, 2008 Obsolescence Notification No: Subject: 2738 Obsolescence of the 110nm, 3.0V MirrorBit Flash Memory products listed below Spansion LLC is announcing the discontinuation of the following products. See below for details:


    Original     		PDF 110nm, S71GL128NB0BFW9Z0 S71PL127NB0HFW4U0 TLA064, TSB064 S71PL127NB0HFW4U0 S98GL128PB0HW0210 S71PL127NB0HHW4U0 s98gl128pb0hw0210 S71PL127NB0HHW4 S71PL127NB0HFW4U semiconductors replacement guide S71PL127NB0HHW4U s98gl S71PL127NB TSB064

    M2N51264DSH8B1G-6K

    Abstract: pc2700 memory M2N51264DSH8B1G
    Text: M2N51264DSH8B1G 512MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B device, organized as 32Mx16 DDR SDRAM


    Original     		PDF M2N51264DSH8B1G 512MB PC2700 DDR333 200-Pin 110nm 32Mx16 M2N51264DSH8B1G-6K pc2700 memory

    Untitled

    Abstract: No abstract text available
    Text: NT5DS32M16BS-5TI 512Mb DDR SDRAM - Preliminary Features • • • • • CAS Latency and Frequency CAS Latency 2 2.5 3 Maximum Operating Frequency MHz DDR400 166 200 • • • • • • • • DDR 512M bit, die B, based on 110nm design rules • Double data rate architecture: two data transfers per


    Original     		PDF NT5DS32M16BS-5TI 512Mb DDR400 110nm

    Spansion S99

    Abstract: s98ws256ne0fw0020 S99-50047-ES FTJ103 FLG103 50124 transistor s99 S99-50083 S99/S19 S99-50124-02
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA March 07, 2008 Obsolescence Notification No: Subject: 2689 Rev.A Obsolescence of the 110nm, 1.8V Burst Mode Mirror Bit Flash Memory product Families, including S29WS-N, S29NS-N, S71WS-N, S71NS-N, S72WS-N, S72NS-N,


    Original     		PDF 110nm, S29WS-N, S29NS-N, S71WS-N, S71NS-N, S72WS-N, S72NS-N, S75WS-N, S75NS-N, S98WS-N Spansion S99 s98ws256ne0fw0020 S99-50047-ES FTJ103 FLG103 50124 transistor s99 S99-50083 S99/S19 S99-50124-02

    s98ws768

    Abstract: S29WS128N s99-50126 Spansion S99 s98ws256ne0fw0020 S99-50109 transistor s99 S99-50165 S98WS256NE S98WS-N
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 07, 2008 Obsolescence Notification No: Subject: 2731 Obsolescence of the 110nm, 1.8V Burst Mode MirrorBit Flash Memory product Families, including S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, and


    Original     		PDF 110nm, S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, S98WS-N S98WS768PE0FW0013 S29WS128S128N0PBFW010E s98ws768 S29WS128N s99-50126 Spansion S99 s98ws256ne0fw0020 S99-50109 transistor s99 S99-50165 S98WS256NE S98WS-N

    Untitled

    Abstract: No abstract text available
    Text: M1N51264DSH8B1G / M1N25664DSH4B1G M1S51264DSH8B1G / M1S25664DSH4B1G 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B


    Original     		PDF M1N51264DSH8B1G M1N25664DSH4B1G M1S51264DSH8B1G M1S25664DSH4B1G 512MB 256MB PC2700 DDR333 200-Pin

    Untitled

    Abstract: No abstract text available
    Text: NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 3 • • • • • Maximum Operating Frequency MHz DDR400 DDR333 (5T) (6K) 133 166 166 200 - • • • • • • • • • DDR 256M bit, die C, based on 110nm design rules


    Original     		PDF NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR400 DDR333 110nm

    NT5DS16M16CT-6K

    Abstract: NT5DS32M8CT DDR333 DDR400 NT5DS16M16CT NT5DS32M8CT-5T NT5DS64M4CT v562
    Text: NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 3 • • • • • Maximum Operating Frequency MHz DDR400 DDR333 (5T) (6K) 133 166 166 200 - • • • • • • • • • DDR 256M bit, die C, based on 110nm design rules


    Original     		PDF NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR400 DDR333 110nm NT5DS16M16CT-6K NT5DS32M8CT DDR333 DDR400 NT5DS16M16CT NT5DS32M8CT-5T NT5DS64M4CT v562

    s98ws256ne0fw0020

    Abstract: Spansion S99 50126 s98ws768 50155 transistor s99 S29WS128N S29WS-N S71WS-N S72WS-N
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 06, 2008 Obsolescence Notification No: Subject: 2731 Obsolescence of the 110nm, 1.8V Burst Mode MirrorBit Flash Memory product Families, including S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, and


    Original     		PDF 110nm, S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, S98WS-N S29WS128N, S72WS256NE, s98ws256ne0fw0020 Spansion S99 50126 s98ws768 50155 transistor s99 S29WS128N S29WS-N S71WS-N S72WS-N

    GL128N

    Abstract: gl512n GL256N S29GL-N 128KB MCP market Transistor 512L
    Text: Implementing Simultaneous Operations in a Simultaneous Read/Write Enabled MCP S74GL256N/640N Application Note Introduction The S29GL-N family of devices is a Spansion 3.0 V, page mode Flash memory solution manufactured using 110nm MirrorBitTM technology. While these products offer high-density at competitive costs, they cannot perform the Simultaneous Read/Write operation due to their single-bank architecture. However, two of these mono-bank


    Original     		PDF S74GL256N/640N) S29GL-N 110nm S74GL-N, GL128N gl512n GL256N 128KB MCP market Transistor 512L

    Spansion

    Abstract: S71VS064R S29VS064 NLB056 NS032J S29VS064R VDE044 NSB056 S29NS032J Spansion MCP products, 56
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA September 23, 2009 Obsolescence Notification No: Subject: 2775 Obsolescence of the discrete 110nm CMOS 1.8V NS032J Products & the MultiChip Packages MCP containing 110nm CMOS 1.8V NS032J Products.


    Original     		PDF 110nm NS032J S29NS032J S71NS032J 44-ball VDE044) Spansion S71VS064R S29VS064 NLB056 S29VS064R VDE044 NSB056 S29NS032J Spansion MCP products, 56

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8

    Nanya nt5ds8m16fs

    Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		PDF NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb Nanya nt5ds8m16fs NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT