VDC048
Abstract: No abstract text available
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 29, 2008 Obsolescence Notification No: Subject: 2708 Obsolescence of the Discrete S29NS128J Products Spansion LLC is announcing the obsolescene of the 110nm, 1.8V Burst Mode Floating Gate NOR
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S29NS128J
110nm,
S29NS128J0LBFW000
S29NS128J0LBJW000
S29NS128J0PBFE000
S29NS128J0LBFW003
S29NS128J0LBJW003
S29NS128J0PBJW000
VDC048
VDC048
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Am29N643
Abstract: ns064j0lb 5M-199 s29ns032 s99d
Text: S29NS128J/S29NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics
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S29NS128J/S29NS064J/S29NS032J/
S29NS016J
16-Bit)
S29NS016J/S29NS032J/S29NS064J/S29NS128J
Am29N643
ns064j0lb
5M-199
s29ns032
s99d
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ns032j0lbjw00
Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
ns032j0lbjw00
B6 3308
S29NS032J
VDC048
VDE044
LF35
Am29N643
NS064J0LBJW00
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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31136
Abstract: S71NS064JA0BFW21
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
Am29F
Am29LV
31136A3
31136
S71NS064JA0BFW21
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31136
Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A2
31136
S71NS064JA0
spansion top marking am29lv
S71NS128JA0
NF16-NF19
S99DCNLB044MSA002
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LF35
Abstract: S29NS032J S29NS-J VDC048 VDE044 NS064J0LBJW00 Nokia c7 AMAX-16 NS032J0PBJW00 Am29N643
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories Data Sheet Notice to Readers: This document states the current technical specifications
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S29NS-J
16-Bit)
S29NS-J
LF35
S29NS032J
VDC048
VDE044
NS064J0LBJW00
Nokia c7
AMAX-16
NS032J0PBJW00
Am29N643
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S71NS-J
Abstract: MCP7A 11E6 C5333 S71NS128JC0
Text: S71NS128JC0 Based MCP Stacked Multi-Chip Product MCP 128 Megabit (8M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multi-plexed Flash Memory with 64Megabit (4M x 16-Bit) CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S71NS128JC0
64Megabit
16-Bit)
S71NS-J-00
S71NS-J-00
S71NS-J
MCP7A
11E6
C5333
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MICRON mcp
Abstract: 31136 S71NS064JA0 S71NS128JA0
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A1
MICRON mcp
31136
S71NS064JA0
S71NS128JA0
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S32HMD24926BAEA20
Abstract: V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA August 19, 2010 Advanced Change Notification No: Subject: 2806 Obsolescence of the products listed below Product Identification: 1201-2648.1 43470D3 43470G6 4347255 4347289
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43470D3
43470G6
5103535B84
5185941F60
5199213K04
AM29LV640GU53RPCI
DIG-00128-005
DS42824
PO71GL512NC0BAWEZ
PO71WS256NDOBAEE7
S32HMD24926BAEA20
V20810-F6096-D670
5185941F60
DS4282-4
S30ML02GP
S71PL129NB0HFW4B0
gwj7
Spansion S99
S71VS064KB0ZJK1B0
S19MN02GP30TFP00
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circuit diagram of nokia 101
Abstract: S29NS032J S29NS-J VDC048 VDE044 spansion am29f part marking Am29N643 450Ball
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
circuit diagram of nokia 101
S29NS032J
VDC048
VDE044
spansion am29f part marking
Am29N643
450Ball
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