QBH-110
Abstract: qbh-9
Text: Available as: QBH-110, 4 Pin TO-8 T4 QBH-9-110, Connectorized Housing (ES E52-1501) RF AMPLIFIER MODEL QBH-110 Maximum Ratings Features ! ! ! ! Ambient Operating Temperature . -55ºC to +125 ºC Storage Temperature . -65ºC to + 150 ºC
|
Original
|
QBH-110,
QBH-9-110,
E52-1501)
QBH-110
QBH-110
qbh-9
|
PDF
|
qbh-110
Abstract: No abstract text available
Text: Available as: QBH-110, 4 Pin TO-8 Tall 080-22502-0001 QBH-9-110, Connectorized Housing (ES E52-1501) RF AMPLIFIER MODEL QBH-110 Maximum Ratings Features ! ! ! ! Ambient Operating Temperature . -55ºC to +125 ºC Storage Temperature .-65ºC to +150 ºC
|
Original
|
QBH-110
QBH-110,
QBH-9-110,
E52-1501)
qbh-110
|
PDF
|
9000 044 053 siemens
Abstract: 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
|
Original
|
O-264
ID130
150OC
100OC
9000 044 053 siemens
110N07
|
PDF
|
TO-264 Jedec package outline
Abstract: ID130 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
|
Original
|
O-264
ID130
150OC
100OC
TO-264 Jedec package outline
ID130
110N07
|
PDF
|
110N06
Abstract: 9000 044 053 siemens 110N07 P8000
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
|
Original
|
ID130
150OC
100OC
110N06
9000 044 053 siemens
110N07
P8000
|
PDF
|
CY15
Abstract: LH-31103K LH-31503K LH-31103 LH-3603
Text: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding
|
Original
|
LH-3603
LH-3803
LH-31103
LH-31503
LH-3803K
LH-31103K
LH-31503K
500VDC
50V/60Hz,
bLH-3603
CY15
LH-31103K
LH-31503K
LH-31103
LH-3603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding
|
Original
|
LH-3603
LH-3803
LH-31103
LH-31503
LH-3803K
LH-31103K
LH-31503K
500VDC
50V/60Hz,
LH-3603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding
|
Original
|
LH-3603
LH-3803
LH-31103
LH-31503
LH-3803K
LH-31103K
LH-31503K
500VDC
50V/60Hz,
bLH-3603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20
|
Original
|
110N30
728B1
123B1
728B1
065B1
|
PDF
|
110N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
|
Original
|
110N30
728B1
123B1
728B1
065B1
110N30
|
PDF
|
01N100D
Abstract: 98809b ON 534 TO252 01N1
Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000
|
Original
|
01N100D
O-220
405B2
01N100D
98809b
ON 534 TO252
01N1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
Si91841
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
|
PDF
|
mv silicon mp3 player
Abstract: No abstract text available
Text: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
Si91841
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
mv silicon mp3 player
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
|
PDF
|
SiP21101
Abstract: 100-W SC70-5 SiP21101DR-33-E3
Text: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
100-W
SC70-5
SiP21101DR-33-E3
|
PDF
|
100-W
Abstract: Si91841 Si91841DT-18-T1 Si91841DT-25-T1 Si91841DT-26-T1 Si91841DT-285-T1 Si91841DT-28-T1 Si91841DT-29-T1 Si91841DT-30-T1 wireless mp3 player circuit diagram free
Text: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
Si91841
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
100-W
Si91841DT-18-T1
Si91841DT-25-T1
Si91841DT-26-T1
Si91841DT-285-T1
Si91841DT-28-T1
Si91841DT-29-T1
Si91841DT-30-T1
wireless mp3 player circuit diagram free
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si91841 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
|
Original
|
Si91841
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200
|
Original
|
55N120AU1
OT-227
|
PDF
|
IXFK110N20
Abstract: 20n20 IXFN120N20 IXFK120N20
Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C
|
OCR Scan
|
IXFN120N20
IXFN110N20
IXFK120N20
IXFK110N20
O-264
20N20
20n20
|
PDF
|
p-mqfp-100-2 package outline
Abstract: SAB-C517A
Text: Device Specifications C517A SIEMENS 10 10.1 Device Specifications Absolute Maximum Ratings Ambient temperature under bias TA .- 40 'C to + 110 'C Storage temperature (Tst).- 65 ”C to +• 150 'C
|
OCR Scan
|
C517A
fl235bOS
FP-100-2
P-MQFP-100-2
p-mqfp-100-2 package outline
SAB-C517A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i
|
OCR Scan
|
O-264
110N06
105N07
110N07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S IE M E N S Device Specifications C515 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias TA . 0 ‘C to + 110 'C Storage temperature (TSJ). - 65 "C to + 150 “C
|
OCR Scan
|
fi23SbOS
A53Sb05
|
PDF
|
G1qr
Abstract: 980529
Text: new : Surface Mount High IP3 Monolithic Amplifier Broadband, 50 or 75 ohms, Maximum Ratings 110°C max. Storage T emperature -400C to 150°C DC Voltage 13V DC Power 7.15W • excellent flatness, ±0.3 dB typ. • very high IP3, 49 dBm typ. at 150 MHz & 45 dBm typ. at 800 MHz
|
OCR Scan
|
-400C
HELA-10
CM624
EA-6636C
HELA-10
G1qr
980529
|
PDF
|
