10N60U1
Abstract: 10n60au1 N60AU1 ixgh 1500
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N60U1 IXGH 10 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N60U1
N60AU1
Moun000
10N60AU1
10N60U1
10N60U1
10n60au1
N60AU1
ixgh 1500
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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ixgh10n60au1
Abstract: 10N60 10N60A IXGH10N60U1 10n60au1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode Combi Packs VCES IXGH10N60U1 600 V 10N60AU1 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGH10N60U1
IXGH10N60AU1
O-247
IXGH10N60AU1
10N60
10N60A
10n60au1
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10N60A
Abstract: IGBT 10N60 10N60 10N60 e N60A
Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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10N60A
10N60
10N60
10N60A
10N60U1
IGBT 10N60
10N60 e
N60A
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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10N60A
Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
Text: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXSH10N60
IXSH10N60A
O-247
10N60A
IGBT 10N60
10N60
IXSH10N60
IXSH10N60A
g 10N60
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10N60A
Abstract: IGBT 10N60 10N60 ixga 10N60 IXGH10N60 IXGH10N60A G 10N60 A g 10N60
Text: Preliminary data VCES Low VCE sat IGBT High speed IGBT IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
O-220AB
10N60A
IGBT 10N60
10N60
ixga 10N60
IXGH10N60
IXGH10N60A
G 10N60 A
g 10N60
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50n50c
Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N50B
50N60B
O-247
50N50
50N60
IXGH24N50BU1
IXGH24N60BU1
50n50c
50N60
IXGH20N60AU1
10N60A
IXGH20N60U1
G 50N60
G20N60
sot-227 footprint
A48A
24N60
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s
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OCR Scan
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10N60AU1
O-247AD
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ixgh10n60
Abstract: 10N60AU L1229 10n60au1
Text: ^C25 V v CE sat 20 A 20 A 2.5 V 3.0 V V CES Low V_c. IGBT with Diode CE(sat) High speed IGBT with Diode 600 V IX G A /IX G H 10N60U1 IX G A /IX G H 10N60AU1 600 V Combi Packs P relim in ary data Maximum Ratings Symbol Test Conditions vt c e s Tj = 25°C to 150°C
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OCR Scan
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IXGH10
N60U1
IXGH10N60AU1
O-263
O-247
10N60U1
10N60AU1
D94006DE,
T0-263
0D0223Ã
ixgh10n60
10N60AU
L1229
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode v CES IXSH 10N60U1 IXSH 10N60AU1 "S" Series Improved SCSOA Capability 600 V 600 V Symbol Test Conditions v"CES v CGR T j = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE= 1 M n 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25” C
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OCR Scan
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10N60U1
10N60AU1
10N60AU1
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10n60au1
Abstract: igbt to247 10N60U1
Text: DIXYS V V CES Low VCE sat IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10N60AU1 600 V ^C25 VCE(sat) 20 A 20 A 2.5 V 3.0 V Combi Packs Preliminary data Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V VCGH T,J = 25°C to 150°C;’ RCat
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OCR Scan
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10N60U1
10N60AU1
O-263
O-247
D94006DE,
igbt to247
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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OCR Scan
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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10N60A
Abstract: IGBT 10N60 10N6Q
Text: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s
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OCR Scan
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IXGH10N60
10N60A
O-263
O-247
10N60
10N60A
10N60U1
10N60AU1
D94006DE,
IGBT 10N60
10N6Q
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD
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OCR Scan
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IXSH10N60
IXSH10N60A
O-247
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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OCR Scan
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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IXGH10N60U1
IXGH10N60AU1
O-247
00D3Sb3
10N60U1
10N60AU1
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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OCR Scan
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1750A
30KHz
T-39-15
IXGH10N60U1
IXGH10N60AU1
IXGH20N60U1
IXGH17N100AU1
SOT227B package
IXSH20N60U1
*GH20N60AU1
1XYS
UltraFast 5-40 kHz
E1S4
TI231
IGBT 20A 600V ABB
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BTS 3900 a
Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device
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OCR Scan
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T-227B
BTS 3900 a
BTS 3900
12N60
BTS 3900 l
35N120U1
24n60
52N60A
IXSH 35N120AU1
35n120u
35N120AU1
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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OCR Scan
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DSAI35-12A
5-16A
5-18A
5-12A
2-06A
12-1OA
2-12A
2x30-Q4C
mm036
ml075-12
MM036-12
mm036-16
mm075-12io1
mm062
DSI 12-06A
MDD95-16N1B
ME03
21N100
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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OCR Scan
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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b14 smd diode
Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60
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OCR Scan
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T0-220
O-263
O-247
O-247
T0-204
24N60
30N60
40N60
25N100
45N100
b14 smd diode
B1108
DIODE SMD b14
smd diode B1100
16N60
B1106
B1112
B1108 D
B1116
IXYS 30N60
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10N60A
Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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OCR Scan
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IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
150i2
O-247
10N60A
IGBT 10N60
10N60
IXGH10N60A
IXGH10N60
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