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IXYS Corporation IXGH10N170A IGBT NPT 1700V 10A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N170A	Tube	87		1	1 $7.59 10 $7.59 100 $4.69767 1000 $3.89863 10000 $3.89863	Buy Now
Mouser Electronics	IXGH10N170A		6			1 $7.59 10 $7.52 100 $5.3 1000 $5.3 10000 $5.3	Buy Now
Quest Components	IXGH10N170A		17			1 $11.64 10 $7.76 100 $7.76 1000 $7.76 10000 $7.76	Buy Now
TME	IXGH10N170A		35		1	1 $7.34 10 $5.83 100 $5.44 1000 $5.44 10000 $5.44	Buy Now
IXYS Corporation IXGH10N170 IGBT 1700V 20A 110W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N170	Tube	55		1	1 $11.23 10 $11.23 100 $7.14433 1000 $11.23 10000 $11.23	Buy Now
Mouser Electronics	IXGH10N170		386			1 $11.13 10 $10.93 100 $7.14 1000 $6.4 10000 $6.4	Buy Now
TME	IXGH10N170				1	1 $7.79 10 $6.19 100 $5.56 1000 $5.56 10000 $5.56	Get Quote
IXYS Corporation IXGH10N300 IGBT 3000V 18A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N300	Tube			30	1 - 10 - 100 $11.26233 1000 $11.26233 10000 $11.26233	Buy Now
IXYS Corporation IXGH10N100A IGBT 1000V 20A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N100A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH10N100U1 IGBT 1000V 20A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N100U1	Tube			30	1 - 10 - 100 $7.652 1000 $7.652 10000 $7.652	Buy Now
Quest Components	IXGH10N100U1		2			1 $14.06 10 $14.06 100 $14.06 1000 $14.06 10000 $14.06	Buy Now

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IXGH10 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH100N30C3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 75A 460W TO247	Original	PDF
IXGH10N100	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH10N100A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH10N100AU1	IXYS	Low Vce(sat) IGBT With Diode High Speed IGBT With Diode	Original	PDF
IXGH10N100U1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode	Original	PDF
IXGH10N170	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 20A 110W TO247	Original	PDF
IXGH 10N170	IXYS	High Voltage IGBT	Original	PDF
IXGH10N170	IXYS	High Voltage IGBT	Original	PDF
IXGH10N170A	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 10A 140W TO247	Original	PDF
IXGH10N170A	IXYS	High Voltage IGBT	Original	PDF
IXGH10N300	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 18A 100W TO247AD	Original	PDF
IXGH10N60	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH10N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH10N60AU1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs	Original	PDF

IXGH10N60U1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs	Original	PDF

IXGH10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGH100N30C3 Abstract: 100N30 100N30C3 Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous	Original	IXGH100N30C3 IC110 50-150kHz O-247 100N30C3 IXGH100N30C3 100N30	PDF
200N30PB Abstract: IXGH100N30B3 200n3 200n30 Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGH100N30B3 200N30PB 7-05-08-D IXGH100N30B3 200n3 200n30	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES	Original	IXGH10N300 O-247 062in. 10N300	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous	Original	IXGH100N30C3 IC110 50-150kHz O-247 100N30C3	PDF
IXGH10N170 Abstract: IXGT10N170 101308 Text: High Voltage IGBT IXGH10N170 IXGT10N170 VCES = 1700V IC90 = 10A VCE sat ≤ 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30	Original	IXGH10N170 IXGT10N170 O-247 O-268 10N170 0-13-08-A IXGH10N170 IXGT10N170 101308	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT VCES = 1700V IC90 = 10A VCE sat ≤ 4.0V IXGH10N170 IXGT10N170 TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30	Original	IXGH10N170 IXGT10N170 O-247 O-268 10N170 0-13-08-A	PDF
ixgh10n60au1 Abstract: 10N60 10N60A IXGH10N60U1 10n60au1 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode Combi Packs VCES IXGH10N60U1 600 V IXGH10N60AU1 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGH10N60U1 IXGH10N60AU1 O-247 IXGH10N60AU1 10N60 10N60A 10n60au1	PDF
IXGH10N300 Abstract: 1200v 30A to247 20A400 ixys ixgh10n300 Text: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES	Original	IXGH10N300 O-247 062in. 10N300 IXGH10N300 1200v 30A to247 20A400 ixys ixgh10n300	PDF
200N30PB Abstract: 200n30 Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGH100N30B3 100Turn-off 200N30PB 7-05-08-D 200n30	PDF
10N60A Abstract: IGBT 10N60 10N60 ixga 10N60 IXGH10N60 IXGH10N60A G 10N60 A g 10N60 Text: Preliminary data VCES Low VCE sat IGBT High speed IGBT IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A O-220AB 10N60A IGBT 10N60 10N60 ixga 10N60 IXGH10N60 IXGH10N60A G 10N60 A g 10N60	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
IGBTs Transistors Abstract: Discrete IGBTS IXGH60N30C3 solar inverters comparison IGBT ac switch circuit TO247AD IXGH100N30C3 TO-247ad IXGH120N30C3 300v Text: IXYS POWER Efficiency through Technology NE W PR O D UCT B R I E F 300V GenX3 IGBTs Next Generation of High Speed C3 Class PT IGBTs JANUARY 2008 OVERVIEW IXYS has introduced a new family of high speed 300V Insulated Gate Bipolar Transistors “IGBTs” called GenX3™. These 300V GenX3 IGBTs offer switching capabilities up to	Original	O-247 IXGH100N30C3 IGBTs Transistors Discrete IGBTS IXGH60N30C3 solar inverters comparison IGBT ac switch circuit TO247AD TO-247ad IXGH120N30C3 300v	PDF

1XGH10N100U1 Abstract: No abstract text available Text: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30	OCR Scan	IXGH10N100U1 IXGH10N100AU1 1XGH10N100U1	PDF
10N60A Abstract: IGBT 10N60 10N6Q Text: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A \|g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s	OCR Scan	IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q	PDF
IXGH10N50U1 Abstract: icao IXGH10N50 Text: I X Y S CORP lfiE D 4t a b S 2 b oooobci3 □ □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3400A M O SIGBT with Anti-Parallel Rectifier IXGH10N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 IXGH10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	IXGH10N60U1 IXGH10N60AU1 O-247 00D3Sb3 10N60U1 10N60AU1	PDF
Untitled Abstract: No abstract text available Text: Low VCE s>t IGBT High speed IGBT IXGH10N100 IXGH10N100A « VC E S ^C25 V * C E (sat) 1000 V 1000V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions v CES Tj = 25°C to 150°C 1000 V ^CGR Tj = 25°C to 150°C; RGE= 1 M£2 1000 V v" ges v GEM Continuous ±20 V T ransient	OCR Scan	IXGH10N100 IXGH10N100A O-247 10N100 10N100A 10N100U1 10N100AU1 0003b34	PDF
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V	PDF
10N60A Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60 Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A 150i2 O-247 10N60A IGBT 10N60 10N60 IXGH10N60A IXGH10N60	PDF
IXGH10N50U1 Abstract: mhab IXGH10N50 Text: I X Y S CORP 1ÔE D MbñbEHb G O O D L Y 'T 'S q - 1 3 □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3400A M OSIGBT with Anti-Parallel Rectifier IXGH10N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package	OCR Scan	00A/ps, 384928IXYS IXGH10N50U1 mhab IXGH10N50	PDF
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60	PDF
IXGH20N60U1 Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package	OCR Scan	1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB	PDF

IXGH10 Search Results

IXGH10 Price and Stock

IXYS Corporation IXGH10N170A

IXYS Corporation IXGH10N170

IXYS Corporation IXGH10N300

IXYS Corporation IXGH10N100A

IXYS Corporation IXGH10N100U1

IXGH10 Datasheets (15)

IXGH10 Datasheets Context Search

IXGH100N30C3

200N30PB

Untitled

Untitled

IXGH10N170

Untitled

ixgh10n60au1

IXGH10N300

200N30PB

10N60A

IXGF30N400

schematic diagram atx Power supply 500w

SSP35n03

IGBTs Transistors

1XGH10N100U1

10N60A

IXGH10N50U1

Untitled

Untitled

10A600V

10N60A

IXGH10N50U1

IXGD40N60A

IXGH20N60U1