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    CLOCK GENERATOR 1HZ

    Abstract: quartz kds M41ST84W AN1012 ABE smd
    Text: M41ST84W 3.0/3.3V I2C Serial RTC with Supervisory Functions KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and DESELECT – Power-fail Deselect, VPFD = 2.60V nom – Switchover, VSO = 2.50V (nom) 400kHz I2C SERIAL INTERFACE 3.0/3.3V OPERATING VOLTAGE


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    PDF M41ST84W 400kHz 500nA 16-pin 10ths/100ths CLOCK GENERATOR 1HZ quartz kds M41ST84W AN1012 ABE smd

    AN609

    Abstract: Si7970DP 74677
    Text: Si7970DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7970DP AN609 10-Jan-06 74677

    AN609

    Abstract: Si7983DP
    Text: Si7983DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7983DP AN609 10-Jan-06

    M41ST85W

    Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
    Text: M41ST85W 2 3.0/3.3V I C Combination Serial RTC, NVRAM Supervisor and Microprocessor Supervisor KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and WRITE PROTECT FOR: – Internal Serial RTC and – External low power SRAM LPSRAM 400kHz I2C SERIAL INTERFACE


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    PDF M41ST85W 400kHz 500nA 10ths/100ths M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28

    usb female

    Abstract: No abstract text available
    Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C


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    PDF UL94-V0 06-MAY-09 05-DEC-07 02-MAR-07 01-FEB-07 10-JAN-06 usb female

    USB FEMALE

    Abstract: No abstract text available
    Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES 0.92 A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C


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    PDF UL94-V0 05-DEC-07 02-MAR-07 01-FEB-07 10-JANING: 10-JAN-06 USB FEMALE

    JAN 7289

    Abstract: 9506 transistor 3669 AN609
    Text: Si7993DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7993DP AN609 10-Jan-06 JAN 7289 9506 transistor 3669

    73708

    Abstract: AN609 Si7973DP
    Text: Si7973DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7973DP AN609 10-Jan-06 73708

    AN609

    Abstract: Si7962DP 10551
    Text: Si7962DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7962DP AN609 10-Jan-06 10551

    73711

    Abstract: 6914 59219 AN609 Si7664DP 12866
    Text: Si7664DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7664DP AN609 10-Jan-06 73711 6914 59219 12866

    AN609

    Abstract: SI7964DP
    Text: SI7964DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SI7964DP AN609 10-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: 4 T H 1S D R A W 1 NG A IS 3 U N P U B L 1S H E D . C O P Y R 1G H T £ 0 RELEASED BY TYCO ELECTRON ICS CORPORATION. FOR ALL PUBLICATION RIGHTS - REV ISIONS RESERVED. LTR DESCRIPTION DATE R E V I S E D PER E C 0 - 05 - 0 0 8 0 2 5 ^ — APVD CJ 10JAN06


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    PDF 10JANO6 S-7946 IMAR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 3 TH IS DRAWING IS U N P U B LISH ED . COPYRIGHT 1997 2 R E L E A S E D F O R P U B L IC A T IO N LOC A L L RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 1 DIST R E V IS IO N S J LTR DESCRIPTION 01 DATE REVISED ECR —06 —0 0 6 0 3 3 DWN APVD T.K T.S


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    PDF 10JAN06 25AUG97 FJ0T0102 00-035QEEE1 MAR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 JAN ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P NOTES: D C C /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275


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    PDF 10JAN06 RG174A/U, 88A/U, URM95, KX22A 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. JAN ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P NOTES: D D /l\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275


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    PDF 18JUL06 10JAN06 RG174A/U, 88A/U, URM95, KX22A 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. AA COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S A5 DF P LTR E DESCRIPTION REV PER 0H 14 - 0 2 0 8 - 0 4 DATE DWN APVD 03NO V05 TK CT D D C C


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    spec RG-174A

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. JAN ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: C /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275


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    PDF 10JAN06 74A/U URM95, KX22A 31MAR2000 spec RG-174A