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    JAN 7289

    Abstract: 9506 transistor 3669 AN609
    Text: Si7993DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7993DP AN609 10-Jan-06 JAN 7289 9506 transistor 3669