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    Vishay Intertechnologies SI7973DP-T1-E3

    MOSFETs 12V 12.8A 1.4W
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    Mouser Electronics SI7973DP-T1-E3
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    Vishay Intertechnologies SI7973DP-T1-GE3

    MOSFETs 12V 12.8A 3.5W 15mohm @ 4.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI7973DP-T1-GE3
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    SI7973DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7973DP Vishay Siliconix MOSFETs Original PDF

    SI7973DP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si7973DP Si7973DP-T1 18-Jul-08

    Si7973DP

    Abstract: No abstract text available
    Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si7973DP Si7973DP-T1 S-32129--Rev. 27-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si7973DP Si7973DP-T1 08-Apr-05

    73708

    Abstract: AN609 Si7973DP
    Text: Si7973DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7973DP AN609 10-Jan-06 73708

    Si7973DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7973DP 18-Jul-08

    Si7973DP

    Abstract: No abstract text available
    Text: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si7973DP Si7973DP-T1-E3 Si7973DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si7973DP Si7973DP-T1-E3 Si7973DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12