ATC 600F
Abstract: RO4003 GRM39Y5V104Z25V TC3943 10GHZ GAAS
Text: TC3943 REV2_20070503 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz
|
Original
|
PDF
|
TC3943
10GHz
TC3943
27dBm
10GHz.
TC3943_
ATC 600F
RO4003
GRM39Y5V104Z25V
10GHZ GAAS
|
LT5570
Abstract: LT5582 LTC5541 1381j LT5579 LTC5540 LTC5543 LTC5542
Text: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range Features Description Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Exceptional Accuracy Over Temperature: ±0.5dB Typ
|
Original
|
PDF
|
LTC5582
40MHz
10GHz
DFN10
10GHz
60dBm
LT5570
LT5582
LTC5541
1381j
LT5579
LTC5540
LTC5543
LTC5542
|
vco 10GHz
Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
Text: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE VS=5V, T=25°C 12 6 11 Features 5 Evaluation Board 10 4 9
|
Original
|
PDF
|
RFVC1801
10GHz
-96dBc/Hz
100kHz
DS100615
vco 10GHz
10GHz OSCILLATOR
RFVC1801
VCO 5GHz
10GHZ
wideband vco mmic
|
1381j
Abstract: CID05X7R1C104K LT5570 CRCW040268R1FK 1027J11 CRCW04022K00FKEA capacitor 1uF lfgz ltc5582idd#pbf 0402YC101KAT
Text: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range Features Description Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Exceptional Accuracy Over Temperature: ±0.5dB Typ
|
Original
|
PDF
|
LTC5582
40MHz
10GHz
DFN10
10GHz
60dBm
v26dBm
1381j
CID05X7R1C104K
LT5570
CRCW040268R1FK
1027J11
CRCW04022K00FKEA
capacitor 1uF
lfgz
ltc5582idd#pbf
0402YC101KAT
|
ultrasonic amplifier circuit diagram
Abstract: Ablebond LMA116 162mm
Text: 2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Features • • • • • • • • • • 4.5dB Typical Noise Figure 15dB Typical Gain 18dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-10GHz Frequency Bandwidth +8 Volts Single Bias Supply
|
Original
|
PDF
|
2-10GHz
LMA116
18dBm
62mmX1
LMA116
10GHz.
ultrasonic amplifier circuit diagram
Ablebond
162mm
|
LT5570
Abstract: LTC5541 LT5579 LTC5540 LTC5543 LTC5542
Text: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range FEATURES n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 10GHz Linear Dynamic Range: Up to 57dB Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms Exceptional Accuracy Over Temperature: ±0.5dB Typ
|
Original
|
PDF
|
LTC5582
40MHz
10GHz
DFN10
26dBm,
190mA
14GHz,
LT5570
LTC5541
LT5579
LTC5540
LTC5543
LTC5542
|
DYNAMIC MEASUREMENT CORP
Abstract: LTC5582 rms detector high Frequency envelope detector rf power detector dynamic range LTE RF Multiband
Text: News Release ⎜ www.linear.com 40MHz to 10GHz RMS Detector with 57dB Dynamic Range Provides Accurate RF Power Measurement MILPITAS, CA – June 16, 2010 – Linear Technology introduces the LTC5582, a high dynamic range 10GHz RMS detector that sets a new standard in measurement accuracy of RF signals. It
|
Original
|
PDF
|
40MHz
10GHz
LTC5582,
14GHz,
CDMA2000.
LTC5582
-56dBm
450MHz
DYNAMIC MEASUREMENT CORP
rms detector
high Frequency envelope detector
rf power detector dynamic range
LTE RF Multiband
|
T11G
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SONET/SDH 10.7Gb/s High GainTransimpedance Amplifier VSC7997 Features Applications • 10GHz Typical Bandwidth • Adjustable Output Offset • High-Gain 5kΩ Differential Transimpedance • -5.2V Power Supply
|
Original
|
PDF
|
VSC7997
10GHz
390mW
OC-192/SDH
STM-64
VSC7997
STM-64)
G52383,
T11G
|
Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
|
Original
|
PDF
|
RFHA1101D
10GHz
14GHz
DS110630
|
RFHA
Abstract: RFHA1101
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
|
Original
|
PDF
|
RFHA1101
10GHz
14GHz
RFHA1101
DS110719
RFHA
|
LEE-19
Abstract: LEE-29 LEE-39 LEE-49 LEE-59
Text: AMPLIFIERS Designer's Kit K1-LEE+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW DC to 8GHz LEE+ Features Wideband, 50Ω Up to +17.3dBm typ.output pwr. • Flat output power • Usability to 10GHz • • • •
|
Original
|
PDF
|
10GHz
LEE-19+
33dBm
M100351
LEE-19
LEE-29
LEE-39
LEE-49
LEE-59
|
FMM3310X
Abstract: No abstract text available
Text: 10.7Gb/s Trans-Impedance Amplifier FMM3310X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1200Ω Complementary 50Ω Outputs Low Group Delay (<26ps@10GHz) Via Hole Ground Single -5.2V Power Supply With DC Feed Back Circuit DESCRIPTION
|
Original
|
PDF
|
FMM3310X
10GHz)
FMM3310X
OC-192
FCSI012002M200
|
Untitled
Abstract: No abstract text available
Text: TGA4807 10.7Gb/s Modulator Driver Amplifier Key Features and Performance • • • • • • • Single-ended Input / Output Small Signal Gain 19dB Small Signal Bandwidth 10GHz Wide Drive Range 3V to 11V 25ps Edge Rates (20/80) Power Dissipation 2.25Watts
|
Original
|
PDF
|
TGA4807
10GHz
25Watts
TGA4807
|
Untitled
Abstract: No abstract text available
Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
|
Original
|
PDF
|
RFHA1101
10GHz
14GHz
DS110630
|
|
|
0603YC103KAT
Abstract: TGA4807
Text: TGA4807 10.7Gb/s Modulator Driver Amplifier Key Features and Performance • • • • • • • Single-ended Input / Output Small Signal Gain 19dB Small Signal Bandwidth 10GHz Wide Drive Range 3V to 11V 25ps Edge Rates (20/80) Power Dissipation 2.25Watts
|
Original
|
PDF
|
TGA4807
10GHz
25Watts
TGA4807
0603YC103KAT
|
Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
|
Original
|
PDF
|
RFHA1101D
10GHz
14GHz
DS110630
|
M1DGAN202
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
|
Original
|
PDF
|
RFHA1101D
10GHz
14GHz
RFHA1101D
DS110630
M1DGAN202
|
Untitled
Abstract: No abstract text available
Text: 3.3V 10Gbps DIFFERENTIAL LINE DRIVER RECEIVER WITH INTERNAL TERMINATION FEATURES DESCRIPTION 3.3V power supply –3dB bandwidth > 10GHz Gain ≥ 4V/V CML/PECL differential inputs CML outputs Internal 50Ω input termination Internal 50Ω output load resistors
|
Original
|
PDF
|
10Gbps
10GHz
200mW
16-pin
SY58016L
10Gbps.
305mm
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier AM008030WM-BM-R AM008030WM-FM-R March 2011 Rev 1 DESCRIPTION AMCOM’s AM008030WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the 0.05 to 10GHz band. This MMIC is in a ceramic package with both RF and DC leads
|
Original
|
PDF
|
AM008030WM-BM-R
AM008030WM-FM-R
AM008030WM-BM/FM-R
28dBm
10GHz
AM008030WM-FM-R
AM008030WM-BM-R
50MHz
10GHz
18dperation
|
ha6007
Abstract: No abstract text available
Text: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier
|
Original
|
PDF
|
HA6007
HA6007
10GHz
13GHz.
|
FMM3307X
Abstract: fujitsu x band amplifiers 100GBS 100GB
Text: 10.0Gb/s Trans-Impedance Amplifier FMM3307X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1100Ω Complementary 50Ω Outputs Low Group Delay (<18ps@10GHz) Via Hole Ground Single -5.2V Power Supply DC Feed Back Circuit DESCRIPTION The FMM3307X is a Trans-Impedance Amplifier for OC-192 applications.
|
Original
|
PDF
|
FMM3307X
10GHz)
FMM3307X
OC-192
FCSI012002M200
fujitsu x band amplifiers
100GBS
100GB
|
M203
Abstract: ITAR ha6006
Text: HBH 10.0 – 13.0 GHz Low Noise Amplifier PRELIMINARY Microwave GmbH HA6006 General Description The HA6006 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier
|
Original
|
PDF
|
HA6006
HA6006
10GHz
13GHz.
M203
ITAR
|
Untitled
Abstract: No abstract text available
Text: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).
|
OCR Scan
|
PDF
|
HFA3102
10GHz
HFA3102
10GHz)
1340nm
1320nm
1320um
|
2SC4873
Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
Text: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ
|
OCR Scan
|
PDF
|
2SC4873
IS21e|
10GHz
2SC4873
IC 2703
TRANSISTOR 10GHZ
TRANSISTOR FOR 10GHz oscillator
IS21E
|
