SLT4100-XN
Abstract: slt4100-xs SLT4101-DS HUW9623173-01I slt4100-qn
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4100 Series HUW9623173-01I May 9, 2008 Technical Specification of 1.3µm MQW-FP Laser Diode Module SLT4100 Series RoHS Compliant Page 1 of 9 Sumitomo Electric Industries, Ltd. Part No.:
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SLT4100
HUW9623173-01I
622Mb/s
HUW9623173-01G
HUW9623173-01H
SLT4100-XN
slt4100-xs
SLT4101-DS
HUW9623173-01I
slt4100-qn
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EN50081-1
Abstract: No abstract text available
Text: MADE FOR THE TRADE! FIBER OPTIC professional XL fiberTOOLS™ Series instruments XL fiberTOOLS™ Series Instruments Designed for Fiber Optic Cable Testing. The XL fiberTOOLS™ are designed for the professional to perform installation and maintenance measurements
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850/1300nm
1310/1550nm
economically890-ST
APC-108
AST-108
ASC-108
T1020
T1030
MA-5636
EN50081-1
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT2710-x Series HUW0124068-01B February 25, 2002 Technical Specification of 1.31µm MQW-FP Laser Diode Module: Receptacle Module SLT2710-x Series Page 1 of 7 Sumitomo Electric Industries, Ltd.
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SLT2710-x
HUW0124068-01B
1290nm
1320nm
1280nm
1340nm;
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Fiberxon
Abstract: k15e 1350nm 850C GR-1089-CORE GR-468 1343nm
Text: Aug 27, 2007 1.25Gbps Single Fiber Bi-directional SFF 2*10 Transceiver For 15km point-to-point transmission Members of FlexonTM Family Compatible with SFF MSA Refer to IEEE 802.3ah -2004 Compatible with Bellcore GR-468 Compatible with FDA 21 CFR 1040.10 and
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25Gbps
GR-468
1310nm
1490nm
FTM-9612S-K15EG
FTM-9612S-K15EG
Fiberxon
k15e
1350nm
850C
GR-1089-CORE
GR-468
1343nm
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smd transistor 304
Abstract: cdfp4-f16
Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
smd transistor 304
cdfp4-f16
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ME7022
Abstract: ME7032 ME7522
Text: M ITSU B ISH I InG aA sP LIG H T EM ITTIN G DIODES M E7X X2 MITSUBISHI D I S C R E T E 3 iE D SC n SERIES 0014223 s b m i t s F O R O P T I C A L C O M M U N IC A T IO N I TY P E NAME DESCRIPTION FEA T U R E S M itsubishi M E7XX2 se ries are InG aA sP/lnP double heterostruoture light emitting d iod es esp e cia lly d esig ned as light
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100mA
ME7022
ME7032
ME7522
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Untitled
Abstract: No abstract text available
Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I
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HFA3101
HFA3101
1340nm
1320nm
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Untitled
Abstract: No abstract text available
Text: > • b 2 4 ci f l 2 cî O ü l M b ^ | 1 IT S Abb HIGH r a d ia n c e l ig h t e m it t in g d io d e s ME7XX2 SERIES MITSUBISHI (DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME7XX2 are In G a A sP /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz
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OCR Scan
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150MHz
17dBm
1310nm.
150MHz
100mA
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Untitled
Abstract: No abstract text available
Text: 944/954 Series Amphenol 944 FC and 954 SC Terminators Intermateability The Amphenol FC and SC terminators are mechanically intermateable with NTT type FC and SC products and conform to JIS C 5970 and JIS 5973 respectively. Features Specifications Back Reflection: -45 dB maximum
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OCR Scan
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1340nm
96-944954TR
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irf 1340
Abstract: e7032
Text: HIGH RADIANCE LIGHT EMITTING DIODES ME7XX2 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION ME7XX2 are In G a A s P /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz Ig h t • High coupling power, typically - 17dBm
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OCR Scan
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1310nm.
150MHz
17dBm
150MHz
100mA
irf 1340
e7032
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cdfp4-f16
Abstract: smd transistor 304
Text: HS-6254RH HARRIS S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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OCR Scan
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
cdfp4-f16
smd transistor 304
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HFA3102
Abstract: No abstract text available
Text: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .
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HFA3102
HFA3102
982E-01
400E-13
1340nm
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HFA3046
Abstract: HAF3096 HFA3128 UHF power TRANSISTOR PNP
Text: ¡ ü H a Ü tr s e mi c ondu c t or HFA3046, HFA3096 HFA3127, HFA3128 r r i s Aprii 1993 Ultra High Frequency Transistor Array Features Description • NPN Transistor fT . 8GHz T he HFA3046, HFA3096, H FA3127 and the H FA3128 are
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HFA3046,
HFA3096
HFA3127,
HFA3128
HFA3096,
FA3127
FA3128
FA3046
HFA3046
HAF3096
HFA3128
UHF power TRANSISTOR PNP
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Untitled
Abstract: No abstract text available
Text: M ITSUBISHI InGaAsP LIGHT EM ITTIN G DIODES M E7XX2 MI T S U B I S H I D I S C R E T E SC H 31E D SERIES ^24^02=1 0 G 1 4 2 2 3 S B M I T S F O R O P T I C A L C O M M U N IC A T IO N TYPE NAME DESCRIPTION FEATUR ES Mitsubishi M E7XX2 series are InGaAsP/lnP double heterostructure light emitting diodes e specially designed as light
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OCR Scan
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150MHz
100mA
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4733 PNP
Abstract: No abstract text available
Text: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
1-800-4-HARRIS
4733 PNP
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LA 7376
Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
Text: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1
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OCR Scan
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HFA3046,
HFA3096,
HFA3127
HFA3128
HFA3046
HFA3096
1-800-4-HARRIS
LA 7376
729E
16 PIN ic 810
PNP monolithic Transistor Arrays
complementary npn-pnp power transistors
TRANSISTOR 7812
1320j
ba 9319
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