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    SLT4100-XN

    Abstract: slt4100-xs SLT4101-DS HUW9623173-01I slt4100-qn
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4100 Series HUW9623173-01I May 9, 2008 Technical Specification of 1.3µm MQW-FP Laser Diode Module SLT4100 Series RoHS Compliant Page 1 of 9 Sumitomo Electric Industries, Ltd. Part No.:


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    SLT4100 HUW9623173-01I 622Mb/s HUW9623173-01G HUW9623173-01H SLT4100-XN slt4100-xs SLT4101-DS HUW9623173-01I slt4100-qn PDF

    EN50081-1

    Abstract: No abstract text available
    Text: MADE FOR THE TRADE! FIBER OPTIC professional XL fiberTOOLS™ Series instruments XL fiberTOOLS™ Series Instruments Designed for Fiber Optic Cable Testing. The XL fiberTOOLS™ are designed for the professional to perform installation and maintenance measurements


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    850/1300nm 1310/1550nm economically890-ST APC-108 AST-108 ASC-108 T1020 T1030 MA-5636 EN50081-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT2710-x Series HUW0124068-01B February 25, 2002 Technical Specification of 1.31µm MQW-FP Laser Diode Module: Receptacle Module SLT2710-x Series Page 1 of 7 Sumitomo Electric Industries, Ltd.


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    SLT2710-x HUW0124068-01B 1290nm 1320nm 1280nm 1340nm; PDF

    Fiberxon

    Abstract: k15e 1350nm 850C GR-1089-CORE GR-468 1343nm
    Text: Aug 27, 2007 1.25Gbps Single Fiber Bi-directional SFF 2*10 Transceiver For 15km point-to-point transmission Members of FlexonTM Family ‹ Compatible with SFF MSA ‹ Refer to IEEE 802.3ah -2004 ‹ Compatible with Bellcore GR-468 ‹ Compatible with FDA 21 CFR 1040.10 and


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    25Gbps GR-468 1310nm 1490nm FTM-9612S-K15EG FTM-9612S-K15EG Fiberxon k15e 1350nm 850C GR-1089-CORE GR-468 1343nm PDF

    smd transistor 304

    Abstract: cdfp4-f16
    Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,


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    HS-6254RH MIL-PRF-38535 HS-6254RH 1320nm 1340nm 05A/cm2 smd transistor 304 cdfp4-f16 PDF

    ME7022

    Abstract: ME7032 ME7522
    Text: M ITSU B ISH I InG aA sP LIG H T EM ITTIN G DIODES M E7X X2 MITSUBISHI D I S C R E T E 3 iE D SC n SERIES 0014223 s b m i t s F O R O P T I C A L C O M M U N IC A T IO N I TY P E NAME DESCRIPTION FEA T U R E S M itsubishi M E7XX2 se ries are InG aA sP/lnP double heterostruoture light emitting d iod es esp e cia lly d esig ned as light


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    100mA ME7022 ME7032 ME7522 PDF

    Untitled

    Abstract: No abstract text available
    Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I


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    HFA3101 HFA3101 1340nm 1320nm PDF

    Untitled

    Abstract: No abstract text available
    Text: > • b 2 4 ci f l 2 cî O ü l M b ^ | 1 IT S Abb HIGH r a d ia n c e l ig h t e m it t in g d io d e s ME7XX2 SERIES MITSUBISHI (DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME7XX2 are In G a A sP /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz


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    150MHz 17dBm 1310nm. 150MHz 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 944/954 Series Amphenol 944 FC and 954 SC Terminators Intermateability The Amphenol FC and SC terminators are mechanically intermateable with NTT type FC and SC products and conform to JIS C 5970 and JIS 5973 respectively. Features Specifications Back Reflection: -45 dB maximum


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    1340nm 96-944954TR PDF

    irf 1340

    Abstract: e7032
    Text: HIGH RADIANCE LIGHT EMITTING DIODES ME7XX2 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION ME7XX2 are In G a A s P /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz Ig h t • High coupling power, typically - 17dBm


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    1310nm. 150MHz 17dBm 150MHz 100mA irf 1340 e7032 PDF

    cdfp4-f16

    Abstract: smd transistor 304
    Text: HS-6254RH HARRIS S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,


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    HS-6254RH MIL-PRF-38535 HS-6254RH 1320nm 1340nm 05A/cm2 cdfp4-f16 smd transistor 304 PDF

    HFA3102

    Abstract: No abstract text available
    Text: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .


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    HFA3102 HFA3102 982E-01 400E-13 1340nm PDF

    HFA3046

    Abstract: HAF3096 HFA3128 UHF power TRANSISTOR PNP
    Text: ¡ ü H a Ü tr s e mi c ondu c t or HFA3046, HFA3096 HFA3127, HFA3128 r r i s Aprii 1993 Ultra High Frequency Transistor Array Features Description • NPN Transistor fT . 8GHz T he HFA3046, HFA3096, H FA3127 and the H FA3128 are


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    HFA3046, HFA3096 HFA3127, HFA3128 HFA3096, FA3127 FA3128 FA3046 HFA3046 HAF3096 HFA3128 UHF power TRANSISTOR PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: M ITSUBISHI InGaAsP LIGHT EM ITTIN G DIODES M E7XX2 MI T S U B I S H I D I S C R E T E SC H 31E D SERIES ^24^02=1 0 G 1 4 2 2 3 S B M I T S F O R O P T I C A L C O M M U N IC A T IO N TYPE NAME DESCRIPTION FEATUR ES Mitsubishi M E7XX2 series are InGaAsP/lnP double heterostructure light emitting diodes e specially designed as light


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    150MHz 100mA PDF

    4733 PNP

    Abstract: No abstract text available
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1


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    HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 1-800-4-HARRIS 4733 PNP PDF

    LA 7376

    Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1


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    HFA3046, HFA3096, HFA3127 HFA3128 HFA3046 HFA3096 1-800-4-HARRIS LA 7376 729E 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors TRANSISTOR 7812 1320j ba 9319 PDF