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    Untitled

    Abstract: No abstract text available
    Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB


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    PDF RFHA1101D 10GHz 14GHz DS110630

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband


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    PDF RFHA1101 RFHA1101 36dBm DS131023

    RFHA

    Abstract: RFHA1101
    Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB


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    PDF RFHA1101 10GHz 14GHz RFHA1101 DS110719 RFHA

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB


    Original
    PDF RFHA1101D 10GHz 14GHz DS110630

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101D RFHA1101D 4.3W GaN on SiC Power Amplifier Die Package: Die The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical,


    Original
    PDF RFHA1101D RFHA1101D 36dBm DS131025

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB


    Original
    PDF RFHA1101 10GHz 14GHz DS110630

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB


    Original
    PDF RFHA1101 10GHz 14GHz DS110719

    M1DGAN202

    Abstract: No abstract text available
    Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB


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    PDF RFHA1101D 10GHz 14GHz RFHA1101D DS110630 M1DGAN202

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


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    PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers