Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    108 POWER TRANSISTOR Search Results

    108 POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    108 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    all mosfet power amplifier

    Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet
    Text: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz


    Original     		PDF FM500-108 40W267 all mosfet power amplifier 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet

    FM300-108

    Abstract: FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD
    Text: FM300-108 300 W - FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 - 108 MHz 48 Volts Input/Output 50 Ω


    Original     		PDF FM300-108 40W267 FM300-108 FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD

    transistor 1x 6 pin

    Abstract: RAYTHEON CDMA2000-1X CDMA2000-1XRTT RMPA1759 RMPA1759-108 108 mhz rf linear board
    Text: RF Components RMPA1759-108 Korean PCS 3V CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1759-108 power amplifier module PAM is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50


    Original     		PDF RMPA1759-108 CDMA2000-1X CDMA2000-1X transistor 1x 6 pin RAYTHEON CDMA2000-1XRTT RMPA1759 108 mhz rf linear board

    MS1281A

    Abstract: transistor MS1281A W108 MS1281
    Text: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System


    Original     		PDF MS1281A MS1281A 112x45° transistor MS1281A W108 MS1281

    ASI10588

    Abstract: FMB150
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System


    Original     		PDF FMB150 FMB150 112x45° ASI10588 ASI10588

    88-108

    Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
    Text: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest


    Original     		PDF

    SD1460

    Abstract: transistor j 108 ASI10588
    Text: SD1460 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1460 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System


    Original     		PDF SD1460 SD1460 112x45° ASI10588 transistor j 108 ASI10588

    ASI10589

    Abstract: FMB175 c 108 m 229
    Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System


    Original     		PDF FMB175 FMB175 ASI10589 ASI10589 c 108 m 229

    88-108 mhz w power

    Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
    Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.


    Original     		PDF 100Ma 88-108 mhz w power 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor

    ASI10587

    Abstract: FMB075
    Text: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System


    Original     		PDF FMB075 FMB075 112x45° ASI10587 ASI10587

    TP9380

    Abstract: transistor j 108
    Text: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System


    Original     		PDF TP9380 TP9380 112x45° transistor j 108

    tp9380

    Abstract: No abstract text available
    Text: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System


    Original     		PDF TP93805 TP9380 112x45°

    an power amplifier 108 mhz

    Abstract: RAYTHEON RMPA2059 RMPA2059-108 7-day 108 mhz rf linear board
    Text: RF Components RMPA2059-108 3V WCDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA2059-108 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 ohms to minimize the use of external components and features a lowpower mode to reduce standby current and DC power consumption during peak phone usage. High


    Original     		PDF RMPA2059-108 RMPA2059-108 an power amplifier 108 mhz RAYTHEON RMPA2059 7-day 108 mhz rf linear board

    VHB25-28F

    Abstract: ASI10724
    Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B


    Original     		PDF VHB25-28F VHB25-28F ASI10724 ASI10724

    VHB25-28S

    Abstract: ASI10725
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B


    Original     		PDF VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725

    Untitled

    Abstract: No abstract text available
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°


    Original     		PDF FMB150 FMB150 112x45°

    SD1015

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB


    Original     		PDF SD1015 152MHz SD1015

    BLW31

    Abstract: No abstract text available
    Text: BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES:


    Original     		PDF BLW31 BLW31 112x45°

    Untitled

    Abstract: No abstract text available
    Text: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar


    Original     		PDF SD1015 152MHz SD1015

    SD1015

    Abstract: No abstract text available
    Text: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar


    Original     		PDF SD1015 152MHz SD1015

    sot123 package

    Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
    Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ


    OCR Scan     		PDF BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123

    SOT123

    Abstract: SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76
    Text: - 2 ,1-Ot,r RICHARDSON ELECTRONICS m* 3M « ir> 14E 0 7734flciö 0000503 T w -iw .« '» ir f if r r fff Transistors for Broadcast Applications Philips FM Broadcast 87-108 MHz Bipolar Ttansistors Load Power @108 MHz W Type Number Power Gain @ 108 MHz (dB)


    OCR Scan     		PDF 0000S 2N3866 O-39/1 BLW90 OT122 BLV21 OT123 BLW86* BIX39* SOT123 SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76

    T119 A

    Abstract: sot 122 SOT123 Package BLW78
    Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain


    OCR Scan     		PDF 4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78

    M113

    Abstract: t4bu SD1013-3
    Text: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP


    OCR Scan     		PDF 150MHz SD1013-3 108-152MHz M113 t4bu SD1013-3