Untitled
Abstract: No abstract text available
Text: SOT161A CDFM8; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT161A
msc071
OT161A
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jedec 0402
Abstract: u21a diode w3 sot161a
Text: PDF: 1999 Oct 07 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 8 leads SOT161A D A F D1 U1 B q C H1 w2 M C M c b 2 H 4 6 8 E1 U2 1 A 3 5 7 E w1 M A M B M p Q w3 M b1 e1 e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT161A
jedec 0402
u21a
diode w3
sot161a
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BLV57
Abstract: mexico Ceramic capacitor 105 RF push pull power amplifier UHF POWER TRANSISTOR MGP365
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor Product specification Supersedes data of August 1986 1998 Feb 09 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV57 PINNING - SOT161A
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BLV57
OT161A
SCA57
125108/00/02/pp24
BLV57
mexico Ceramic capacitor 105
RF push pull power amplifier
UHF POWER TRANSISTOR
MGP365
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BLF246B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES
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M3D075
BLF246B
MBB157
MBC826
SCA75
613524/07/pp14
BLF246B
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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BLF246B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES
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M3D075
BLF246B
MBB157
MBC826
603516/05/pp16
BLF246B
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AgCu28
Abstract: No abstract text available
Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors
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SC-74
OT457
representiveSOT23
FeNi42
SnPb20
AgCu28
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an10133
Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
Text: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003
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BB202,
BF1107/8
BGA6589
BGA6589.
BGA6589
an10133
capacitor 100nf 16v x7r 10 1005 murata
TEA5767/68
Garage Door Opener remote circuit diagrams
philips rf manual
balanced modulator ic 1496
2.4GHz Cordless Phone circuit diagram
A case 10uf (10v) ±20% Chip Tantal
TEA5767
working principle scanner block diagram
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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BLV36
Abstract: No abstract text available
Text: L/^ioaucti, LJnc. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U'SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV36 VHP LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier.
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BLV36
100mA
BLV36
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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KELTRON
Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507
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1000n
127var
220AB
220AB
20var
KELTRON
b0949
B0539
sot6001
2SC2516M
B0123
2n5978
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B PIN CONFIGURATION
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M3D075
BLF246B
MBB157
MBC826
SCA75
613524/07/pp14
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PT8828
Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
Text: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C
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2SC1398
2S01802
2N4226
2SC2078
2SC1909
2SC3294
O-220
O-220var
O-22Ovar
PT8828
sot123 package
KT922G
2SC1239
SGSF324
motorola 2n4932
BLY93A
S0122
J03020
2SC2094
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MRF212
Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413
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OT-161
92var
StR-10
OT-123var
O-220
MRF212
b0507
MRF221
motorola diode
b0106A
B12 nec diode
2sc94
2n5861
2N4127
MRF603
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irf9110
Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB
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1RF9Z32
O-220AB
1RF48
IRF034
BUZ171
O-220ftB
irf120
to-204aa
irf9110
SOT-123
IRF224
irf113
BUZ10
BUZ63
IRF9122
irfl33
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SOT-123
Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0
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2k6847
o-205af
2n6849
2n6851
OT-268
BIF548
OT-262
IRF9Z10
O-220
SOT-123
IRF9110
PHILIPS TO220
blf544b
BLF246
BLF348
irc224
IRC350
IRC530
IRC832
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or
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bbS3T31
BLV36
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745F1270BK00J
Abstract: BLU52
Text: N AMER PHILIPS/DISCRETE 860 ObE D 01126 bbS3T31 0D133fc,4 4 D T -3 3 -/3 ^ V.H.F./U.H.F. P U SH -P U LL BLU 52 P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 M H z range.
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bbS3T31
00133m
T-33-/3
BLU52
745F1270BK00J
BLU52
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100-400MHz
Abstract: 2N6362 UHF TRANSISTOR
Text: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6362
2N6362
100400Mhz
OT-161
32flfl2T2
100-400MHz
UHF TRANSISTOR
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TPV-375
Abstract: transistor TPV375 TPV375 transposers
Text: GAE GREAT AMERICAN ELECTROINCS TPV-375 Silicon NPN power transistor TPV-375 is designed for construction of power amplifiers with a common amplifier channel for signals of picture and sound in Band III TV transposers and transmitters. Output Power: Frequency Range:
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TPV-375
TPV-375
OT-161
28/lc
transistor TPV375
TPV375
transposers
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l17c
Abstract: 727 Transistor power values BLF246B
Text: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor
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BLF246B
OT161A
-SOT161A
OT161A
l17c
727 Transistor power values
BLF246B
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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