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    108 MOTOROLA TRANSISTOR Search Results

    108 MOTOROLA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    108 MOTOROLA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOTOROLA 813 transistor

    Abstract: OPTO MOC8102 MOC8101 motorola transistor moc8103 7500 IC 14 PIN Quarz 4 MHz MOC8101 MOC8102 MOC8104 MOC8105
    Text: MOTOROLA Order this document by MOC8101/D SEMICONDUCTOR TECHNICAL DATA MOC8101 [CTR = 50–80%] GlobalOptoisolator MOC8102 6-Pin DIP Optoisolators for Power Supply Applications No Base Connection [CTR = 73–117%] MOC8103 [CTR = 108–173%] MOC8104 [CTR = 160–256%]


    Original     		PDF MOC8101/D MOC8101 MOC8102 MOC8103 MOC8104 MOC8101, MOC8102, MOC8103, MOC8104 MOC8105 MOTOROLA 813 transistor OPTO MOC8102 MOC8101 motorola transistor moc8103 7500 IC 14 PIN Quarz 4 MHz MOC8101 MOC8102

    MRF160

    Abstract: VK200
    Text: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		PDF MRF160/D MRF160 MRF160 VK200

    transistors cross reference list

    Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
    Text: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF


    Original     		PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 transistors cross reference list MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158

    SF-11N

    Abstract: No abstract text available
    Text: Order this document by MRF959T1/D MRF959T1 NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9.0 GHz DC


    Original     		PDF MRF959T1/D MRF959 MRF959T1 MRF959T1/D SF-11N

    MRF959

    Abstract: MRF959T1 Microlab FXR FXR SF-31N SF-11N
    Text: Order this document by MRF959T1/D MRF959T1 NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9.0 GHz DC


    Original     		PDF MRF959T1/D MRF959T1 MRF959 MRF959T1 Microlab FXR FXR SF-31N SF-11N

    MRF959

    Abstract: MRF959T1
    Text: Order this document by MRF959T1/D Motorola’s MRF959 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9.0 GHz DC current gain–bandwidth product with excellent linearity.


    Original     		PDF MRF959T1/D MRF959 25SEP01 26MAR02 90/SC MRF959T1

    Motorola 581

    Abstract: maximum gain 33 at 2.0 ghz RF NPN POWER TRANSISTOR 2.5 GHZ MRF959 MRF959T1
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 LIFETIME BUY • LOW NOISE TRANSISTORS fτ = 9.0 GHz NFmin = 1.3 dB ICMAX = 100 mA Low Noise Figure, NFmin = 1.3 dB Typ @ 1.0 GHz, 6.0 V, 5.0 mA High Current Gain–Bandwidth Product, fτ = 9.0 GHz, 6.0 V, 30 mA


    Original     		PDF MRF959 MRF959T1/D 25SEP01 26MAR02 90/SC Motorola 581 maximum gain 33 at 2.0 ghz RF NPN POWER TRANSISTOR 2.5 GHZ MRF959T1

    motorola 547

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		PDF MRF160/D MRF160 motorola 547 Nippon capacitors

    Motorola 581

    Abstract: SF-11N MRF959 MRF959T1
    Text: MOTOROLA Order this document by MRF959T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF959T1 NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited


    Original     		PDF MRF959T1/D MRF959T1 MRF959 Motorola 581 SF-11N MRF959T1

    MRF951

    Abstract: No abstract text available
    Text: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features


    Original     		PDF MRF951/D MRF951 MMBR951 MRF9511 MRF951 MK145BP,

    940 629 MOTOROLA 220

    Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
    Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		PDF MRF158/D MRF158 940 629 MOTOROLA 220 MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS

    MMBR521LT1

    Abstract: MRF5211LT1
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MRF5211LT1

    MMBR521LT1

    Abstract: MRF5211LT1 TO-236-AA
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MMBR521LT1/D* MRF5211LT1 TO-236-AA

    4C6 toroid

    Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET


    OCR Scan     		PDF b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125

    730C-04

    Abstract: moc8103 M0C8104 MOC8101 MOC8102 MOC8104 730D-05 MOC81Q4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL ca <S> ® CSA BS SEMKO OEMKO NEMKO SETI BABT 6-Pin DIP Optoisolators For Power Supply Applications No Base Connection MOC8101* [CTR = 50-80% ] MOC8102* [CTR e 73-117%] MOC8103 [CTR e 108-173%] MOC8104 [CTR


    OCR Scan     		PDF MOC8101, MOC8102, MOC8103 MOC8104 730C-04 M0C8104 MOC8101 MOC8102 730D-05 MOC81Q4

    tp9383

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TP9383 The RF Line V H F P o w e r T ra n sisto r • • • • • • 2 150 W — 108 MHz VHF POW ER TRANSISTOR . . . d e sign e d for use in the new generation of V H F -F M broadcast transm itters operating


    OCR Scan     		PDF TP9383 tp9383

    BC107 characteristic

    Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
    Text: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage


    OCR Scan     		PDF BC107, BC109f O-206AA) BC107 characteristic BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic

    TP9390

    Abstract: No abstract text available
    Text: 15E D I MOTOROLA L,3b?55M 0 0 0 0 2 1 3 MOTOROLA SC X ST R S/R M | f-3 F SEM ICO NDUCTO R TECHNICAL DATA TP9390 Advance Inform ation The RF Line V H F P o w e r T ra n sis to r 2 5 0 W — 108 M H z VH F POW ER T R A N S IS T O R . . . d e sig n e d for u se in V H F -F M transm itters op e ratin g from a 24 or 28 Volt sup p ly. G o ld


    OCR Scan     		PDF TP9390 TP9390

    TP1940

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP1940 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode 300 W , 50 V, 108 M H z N -C H A N N E L M O S BROADBAND RF PO W ER FET T h e h ig h p o w e r, h ig h g a in a n d b ro a d b a n d p e rfo rm a n c e o f ea ch d e v ic e m a k e s p o s s ib le


    OCR Scan     		PDF TP1940 TP1940

    2n4427 MOTOROLA

    Abstract: MRF220 TP9380 motorola 2N4427 motorola TP9380 MRF237 MRF234 TP9383 fm band broadcast transmitter mrf237 MOTOROLA
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b?ES4 GGT a f i MS 3 • MOTb T i'33-O S 6 6 -8 8 MHz BAND Power output chains up to 25 watts output are obtainable in the international VHF FM “Mid-Band” for which these transistors are optimized. Device Pout Output Power


    OCR Scan     		PDF MRF229 MRF234 45A-09/1 TP1940 2N4427 MRF604 MRF553 MRF607 MRF220 MRF237 2n4427 MOTOROLA TP9380 motorola 2N4427 motorola TP9380 MRF234 TP9383 fm band broadcast transmitter mrf237 MOTOROLA

    mrf941

    Abstract: MRF9411L s2l sot23
    Text: MOTOROLA SC X S T R S / R MOTOROLA 4bE D • b3b?25M _ F m SEMICONDUCTOR ■ 0014*14*1 4 ■ *T^3 I - TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Lino NPN S ilico n Low N bise, High-Frequency Transistors lc 3 50 mA LOW NOISE HIGH FREQUENCY


    OCR Scan     		PDF MRF941 MMBR941L MRF9411L MRF941 MRF9411L s2l sot23

    LP1983

    Abstract: motorola 039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ


    OCR Scan     		PDF LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039

    mps901

    Abstract: mrf901 MPS90
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. • High Current-Gain — Bandwidth Product — fy = 4.5 GHz Typ @ lc = 15 mAdc •


    OCR Scan     		PDF MRF901 O-226AA MPS901 mrf901 MPS90

    MRF904

    Abstract: No abstract text available
    Text: HOTOROLA SC XSTRS/R F 4bE T> b3b?25M DOIMiaS 4 MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA MRF904 The RF Line NPN SIUCON HIGH-FREQUENCY TRANSISTOR . . . designed for use as low-noise, high-gain, general purpose amplifiers. High Current-Gain — Bandwidth Product —


    OCR Scan     		PDF MIL-S-19500 MRF904HX, MRF904HXV MRF904 llec33 MRF904