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    H22E Search Results

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    H22E Price and Stock

    Cree, Inc. JB2835AWT-W-H22EA0000-N0000001

    LED J WARM WHT 2200K 1411
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    DigiKey JB2835AWT-W-H22EA0000-N0000001 Reel 52,000 4,000
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    JB2835AWT-W-H22EA0000-N0000001 Cut Tape 3,890 1
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    Avnet Americas JB2835AWT-W-H22EA0000-N0000001 Reel 4 Weeks 100,000
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    Mouser Electronics JB2835AWT-W-H22EA0000-N0000001 1,355
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    Cree, Inc. JE2835AWT-R-H22EA0000-N0000001

    LED J WARM WHT 2200K 1411
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    DigiKey JE2835AWT-R-H22EA0000-N0000001 Reel 28,000 4,000
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    JE2835AWT-R-H22EA0000-N0000001 Cut Tape 1,230 1
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    JE2835AWT-R-H22EA0000-N0000001 Digi-Reel 1
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    Avnet Americas JE2835AWT-R-H22EA0000-N0000001 Reel 4 Weeks 100,000
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    Mouser Electronics JE2835AWT-R-H22EA0000-N0000001
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    Energizer Battery Company ENPMHH22E

    ENERGIZER METAL INSPECTION LIGHT
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    DigiKey ENPMHH22E 24 1
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    3M Interconnect BATH22-ES

    COMMAND WATER-RESISTANT REFI
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    DigiKey BATH22-ES Box
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    Torex Semiconductor LTD XC6701AH22ER-G

    IC REG LINEAR 17.2V 150MA 6USPC
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    DigiKey XC6701AH22ER-G Reel 3,000
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    H22E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H22E4020IR

    Abstract: infrared led receiver infrared receiver led FDE4020IR infrared circuit infrared transistor 850 nm LED high power infrared led TR11
    Text: The Optoelectronic Manufacturing Corporation UK Ltd Candela House, Cardrew Industrial Estate, Redruth, Cornwall, TR11 5ER Tel: 01209 215424 Fax: 01209 215197 H22E4020IR Infrared 850nm Emitter Electrically isolated plastic cap package. High Radiant Output for Fibre Optic Applications.


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    PDF H22E4020IR 850nm FDE4020IR 100mA 100mA, H22E4020IR infrared led receiver infrared receiver led infrared circuit infrared transistor 850 nm LED high power infrared led TR11

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


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    PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    1LS transistor

    Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


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    PDF Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 1LS transistor 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2

    BCW60

    Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
    Text: BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration


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    PDF BCW60, BCX70 BCW61, BCX71 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW60 BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71

    BC846

    Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC846 BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860

    C1567

    Abstract: Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517
    Text: NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 PNP Type Marking Ordering Code


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    PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 C1567 Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    3904

    Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
    Text: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


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    PDF Q68000-A8396 OT-89 3904 Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn

    2222a

    Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
    Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


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    PDF Q68000-A6481 Q68000-A6473 OT-23 2222a npn 2222 2222 NPN br 2222 npn 2222 A 2222

    Untitled

    Abstract: No abstract text available
    Text: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1


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    PDF VPW09197 EHA07177 SC-74 EHP00365 EHP00364 EHP00368 EHP00369 Apr-22-1999

    CH3906TGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906TGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT-416


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    PDF CH3906TGP SC-75/SOT-416 SC-75/SOT-416) 200mA) SC-75/SOT-412 1N916 CH3906TGP

    CH3906VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906VGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


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    PDF CH3906VGP OT-563 OT-563) 200mA) OT-562 1N916 CH3906VGP

    CH3904VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904VGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


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    PDF CH3904VGP OT-563 OT-563) 200mA) 1N916 CH3904VGP

    H12E

    Abstract: BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e
    Text: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


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    PDF BCV61 EHA00012 OT143 BCV61B BCV61C H12E BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


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    PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


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    PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    bc 104 npn transistor

    Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


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    PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    BC847

    Abstract: BC857AT BC857BT BC857T SC75 VPS05996
    Text: BC857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B


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    PDF BC857T BC847. BC857AT BC857BT VPS05996 EHP00381 EHP00380 Nov-29-2001 EHP00382 BC847 BC857AT BC857BT BC857T SC75 VPS05996

    Katalog tesla tranzistor

    Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
    Text: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA


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    PDF KFY18, KFY34, KFY46 KSY63 KSY82 Katalog tesla tranzistor KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    PDF

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


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    PDF BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59

    BCX70

    Abstract: hFE Group BCX70G BCX70H BCX70J BCX70K BCX71 ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70
    Text: k FERRANTI semiconductors BCX70 i N P N Silicon Planar Sm all Signal Transistor DESCRIPTION These devices are intended fo r use in low level am plifica­ tion, lo w level switching and lo w noise applications. Com plementary to th e BCX71 series. Encapsulated in the popular SOT-23 package these devices


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    PDF BCX70 BCX71 OT-23 BCX70 BCX70, BCX70G BCX70H BCX70J hFE Group BCX70K ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70

    BC107B

    Abstract: BC107 characteristic BC107B, MOTOROLA
    Text: MOTOROLA Order this document by BC107B/D SEMICONDUCTOR TECHNICAL DATA Transistors BC107B NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 45 Vdc Collecto r-B ase Voltage v CBO 50 Vdc Em itter-Base Voltage Rating


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    PDF BC107B/D BC107B BC107B BC107 characteristic BC107B, MOTOROLA