Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillators MW500-1704 1060MHz to 1130MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1060MHz to 1130MHz 1/4 V 1 +/- 3 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -96 typ dBc/Hz
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MW500-1704
1060MHz
1130MHz
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cxd2818er
Abstract: No abstract text available
Text: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase
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CXD2818ER
CXD2818ER
430mW
D2818
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MAX9985
Abstract: No abstract text available
Text: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise
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1200MHz
1700MHz
MAX19993
27dBm
1700MHz
1000MHz
1560MHz,
MAX19993A,
MAX19993.
MAX9985
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signal generator
Abstract: AN 5522 DC689A LT5522 "Signal Generator" 142-MHz
Text: DC689A DEMO BOARD QUICK START GUIDE Description: The DC689A demo circuit board is intended to demonstrate the capabilities of the LT5522 highsignal-level downconverting mixer IC for wireless infrastructure applications. The LT5522 Figure 1 is a broadband high signal level active mixer optimized for high linearity
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DC689A
LT5522
LT5522
50ohm-matched
50ohms
1900MHz,
1901MHz.
140MHz.
signal generator
AN 5522
"Signal Generator"
142-MHz
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Untitled
Abstract: No abstract text available
Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE
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SF0600BA03183S
Abstract: No abstract text available
Text: 600 MHz SAW Filter 80 MHz Bandwidth Part Number: SF0600BA03183S DESCRIPTION • • • 600 MHz SAW band pass filter with 80 MHz bandwidth. 5mm x 5mm LCC package. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical: Horizontal: Vertical: Frequency Magnitude
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SF0600BA03183S
DSSF0600BA03183S
30-Mar-2010
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Untitled
Abstract: No abstract text available
Text: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise
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1200MHz
1700MHz
MAX19993
27dBm
1000MHz
1560MHz,
MAX19993A,
MAX19993.
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mode 5 IFF
Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02B
EG-01-DS02B8
mode 5 IFF
Coaxicom
RF 1090MHz
hvvi
4884 MOSFET
hvv1011
RF MOSFET CLASS AB
100B270JP500X ATC
FXT00
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FET J134
Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110B
1011LD110B
110Wpk
1030MHz
20Network
250mA,
FET J134
JMC5801
1000uf 63V electrolytic capacitor
capacitor 470uf/63v
63V 470uf
J134 MOSFET
description of capacitor 470uf 63v
1060 fet
470uf 63v
c06 capacitor
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Untitled
Abstract: No abstract text available
Text: 600 MHz SAW Filter 80 MHz Bandwidth Part Number: SF0600BA03183S DESCRIPTION • • • 600 MHz SAW band pass filter with 80 MHz bandwidth. 5mm x 5mm LCC package. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical: Horizontal: Vertical: Frequency Magnitude
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SF0600BA03183S
DSSF0600BA03183S
10-Jul-08
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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MAX1999
Abstract: MAX19993A MAX9985
Text: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise
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1200MHz
1700MHz
MAX19993
27dBm
1700MHz
1000MHz
1560MHz,
MAX19993A,
MAX19993.
MAX1999
MAX19993A
MAX9985
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cxd2818er
Abstract: EA-PS 9000
Text: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase
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CXD2818ER
CXD2818ER
430mW
D2818
EA-PS 9000
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Transistor J182
Abstract: No abstract text available
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
250mA,
Transistor J182
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Untitled
Abstract: No abstract text available
Text: OSCILLATOR P R O D U C T G U I D E THE CONNOR-WINFIELD CORPORATION VCXO OCXO TCXO XO Global Timing Solutions for 50 Years At Connor-Winfield we take a consultative approach in providing solutions to your frequency control design requirements. Our engineers excel at working with your
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1030MHz-1090MHz
Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
20Network
250mA,
1030MHz-1090MHz
capacitor 470uf/63v
1000uf 63V electrolytic capacitor
description of capacitor 470uf 63v
capacitor 1000uf 63v
j182
1000uf capacitor
470uf 16V tantalum
capacitor 1000uF
electrolytic capacitors 47uf/63V
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CXD2818ER
Abstract: EA-PS 9000 diode varactor B110 eastar
Text: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase
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CXD2818ER
CXD2818ER
430mW
EA-PS 9000
diode varactor B110
eastar
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CXA3775ER
Abstract: CXA3775
Text: Direct Conversion IC for Digital Satellite Broadcast Tuner CXA3775ER Description The CXA3775ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXA3775ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase
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CXA3775ER
CXA3775ER
430mW
1000p
16MHz
1000p
CXA3775
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mPD71055
Abstract: NEC V810 V30MX MPD7000 memory compiler OPENCAD CMOS Block library PD71059 MPD71051 NZ70008H 70008h
Text: DATA SHEET CB-C8VX/VM 0.5-Micron Cell Based CMOS ASIC Description NEC’s CB-C8VX/VM family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macrofunctions such as microprocessors, intelligent peripherals, analog functions and
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Untitled
Abstract: No abstract text available
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110B
1011LD110B
110Wpk
1030MHz
250mA,
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AIRBORNE DME
Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
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HVV1012-550
1025MHz
1150MHz.
AIRBORNE DME
transistor SMD 12W MOSFET
transistor SMD 12W
smd transistor code 12w
RF Transistor S10-12
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RX881
Abstract: tx888 tx-88
Text: Microwave Devices DIELECTRIC FILTERS Part No. Center frequency MHz Band width (MHz) TX836.5 25 RX881.5 25 TX911.5 27 Insertion loss (dB) max. [Temperature range] VSWR 50S! max. Maximum handling power (W) Attenuation (dB) min. Size WxLxT (mm) [inches] Weight
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TX836
CF6123701D
RX881
894MHz]
849MHz]
870MHz]
1850MHz]
2775MHz]
925MHz]
760MHz]
tx888
tx-88
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gigafil
Abstract: DFY2R902 DFY2R902CR947 DFY2R DFY2R836CR881BH RX881
Text: MICROWAVE FILTERS GIGAFIL DUPLEXERS— DFY Series FEATURES • Low insertion loss for using high Q -value dielectric resonators. ■ Small and light for using high dielectric constant ceramics ■ Excellent tem perature stability for tem perature compensated
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MIL-STD-202,
IL-STD-202
DFY2R836CR881BFJA
33MHz
905MHz
800/900M
gigafil
DFY2R902
DFY2R902CR947
DFY2R
DFY2R836CR881BH
RX881
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gigafil
Abstract: DFY2R836CR881BFA DFY2R836CR881 DFY2R836 DFY2R836CR881BFDA DFY2R836CR881BH 933B
Text: m u F fn tn MICROWAVE FILTERS GIGAFIL DUPLEXERS-DFY Series FEATURES • Low insertion loss for using high Q-value dielectric resonators. ■ Small and light for using high dielectric constant ceramics. ■ Excellent temperature stability for temperature compensated
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DFY2R836CR881BFDA
25MHz
800/900M
gigafil
DFY2R836CR881BFA
DFY2R836CR881
DFY2R836
DFY2R836CR881BFDA
DFY2R836CR881BH
933B
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