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    Untitled

    Abstract: No abstract text available
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit

    diode 104

    Abstract: No abstract text available
    Text: Package Drawing 104-ball FBGA Unit: mm 14.56 ± 0.1 0.2 S B 15.18 ± 0.1 INDEX MARK 0.2 S A 0.10 S 1.05 ± 0.1 S 0.40 ± 0.05 0.10 S B φ0.12 M S A B 1.27 104-φ0.50 ± 0.05 INDEX MARK 12.7 A 2.0 12.0 0.8 ECA-TS2-0206-01


    Original     		PDF 104-ball ECA-TS2-0206-01 diode 104

    playstation 3

    Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
    Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor


    Original     		PDF 512Mb E0428E60 playstation 3 playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original     		PDF AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D

    Rambus XDR

    Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
    Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.


    Original     		PDF 512Mb x16-bit GDDR3-1600 DDR3-1333 64MB/system DDR2-667 DDR2-1066 Rambus XDR DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400

    014701 b

    Abstract: 8x4Mx16
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E31 014701 b 8x4Mx16

    8x4Mx16

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E20 8x4Mx16

    PF38F4060M0Y3DF

    Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
    Text: product line card Numonyx NOR flash memory Numonyx NOR flash memory for wireless applications A wide selection of NOR plus RAM multi-chip package offerings, and NOR only packages N u m on y x M S t r a t a f l a s h ® C e l l u l a r M e m or y NOR Density


    Original     		PDF 1024Mb PF58F0062M0Y1BF 105ball PF58F0033M0Y0BF x1x16 80Ball M36A0W5040B/ M36A0W5030B/ PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF

    010 s

    Abstract: No abstract text available
    Text: EDX5116ACSE Package Drawing 104-ball FBGA Unit: mm 14.56 ± 0.1 0.2 S B 15.18 ± 0.1 INDEX MARK 0.2 S A 0.10 S 1.05 ± 0.1 S 0.40 ± 0.05 0.10 S B φ0.12 M S A B 1.27 104-φ0.50 ± 0.05 INDEX MARK 12.7 A 2.0 12.0 0.8 ECA-TS2-0177-01 Preliminary Data Sheet E0881E10 Ver. 1.0


    Original     		PDF EDX5116ACSE 104-ball ECA-TS2-0177-01 E0881E10 010 s

    Numonyx admux

    Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit


    Original     		PDF 10x10 512Mbit-1Gbit 128-256Mbit 104-Ball 512Mb 133Mhz 133Mhz Numonyx admux JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18

    Rambus XDR

    Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 Rambus XDR XDR Rambus EDX5116ADSE-3C-E 8x4Mx16

    XDR Rambus

    Abstract: EDX5116ACSE xdr elpida
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE E0881E20 XDR Rambus xdr elpida

    XDR DRAM

    Abstract: ODF10 K4Y54044UF
    Text: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81


    Original     		PDF K4Y5416 256Mbit XDR DRAM ODF10 K4Y54044UF

    EDX5116ADSE-3C-E

    Abstract: EDX5116ADSE
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E30 EDX5116ADSE-3C-E

    K4Y50024UC

    Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit K4Y50024UC K4Y50044UC K4Y50084UC K4Y50164UC

    104BA

    Abstract: No abstract text available
    Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary


    Original     		PDF K4Y5002 512Mbit dev37 104BA

    EDX5116ACSE

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE M01E0107 E0881E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E40

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K4Y5016 /08/04/02 4UC XDRTM DRAM 512Mbit XDRTM DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y5016 512Mbit

    XDR Rambus

    Abstract: 8H001
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE E0643E40 XDR Rambus 8H001

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ABSE EDX5116ABSE M01E0107 E0643E30

    EDX5116ACSE-3C-E

    Abstract: EDX5116ACSE X5116
    Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ACSE EDX5116ACSE M01E0107 E0881E20 EDX5116ACSE-3C-E X5116

    DQ15d

    Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
    Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation


    Original     		PDF EDX5116ADSE EDX5116ADSE M01E0706 E1033E40 DQ15d EDX5116ADSE-3C-E x5116 E1033E40 T21at 8x4Mx16