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    100HH Search Results

    100HH Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G45AA19221100HHR Amphenol Communications Solutions HDMI 2.1, RECEPTACLE, A type with flange screw hole CH 7.08mm, R/A SMT, 30u\\. plating, Tray packing Visit Amphenol Communications Solutions
    SF Impression Pixel

    100HH Price and Stock

    Syfer Technology 0402J250P100HHT

    MULTI-LAYERED CERAMIC CAPACITOR
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    DigiKey 0402J250P100HHT Reel 20,000 10,000
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    0402J250P100HHT Digi-Reel 1
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    0402J250P100HHT Cut Tape 1
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    Micro Commercial Components MBR5U100HHE3-TP

    DIODE SCHOTTKY 100V 5A TO277
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    DigiKey MBR5U100HHE3-TP Cut Tape 3,030 1
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    MBR5U100HHE3-TP Reel 4,000
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    MBR5U100HHE3-TP Digi-Reel 1
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    Mouser Electronics MBR5U100HHE3-TP
    • 1 $1.17
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    Tripp Lite K4081100HHXX000

    9155 8KVA 208/120V W/PDM
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    DigiKey K4081100HHXX000 Bulk 1
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    Siemens 3RA21100HH151AP0

    STARTER DOL FB S00 0.55-0.8A 230
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    DigiKey 3RA21100HH151AP0 Box 1
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    Mouser Electronics 3RA21100HH151AP0
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    Siemens 3RA21100HH151BB4

    STARTER DOL FB S00 0.55-0.8A 24V
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    DigiKey 3RA21100HH151BB4 Box 1
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    Mouser Electronics 3RA21100HH151BB4
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    100HH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ACM4532

    Abstract: ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800 TDK common mode choke notes 24v Audio amplifier class AB
    Text: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM


    Original     		PDF LM48410 LM48410 ACM4532 ECJ-3YB1C105K LM48410SQ TPSB106K016R0800 TDK common mode choke notes 24v Audio amplifier class AB

    Untitled

    Abstract: No abstract text available
    Text: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.


    Original     		PDF EM73866 EM73866 500-nibble 13-level 22-stage 12-bit

    LM48410

    Abstract: No abstract text available
    Text: LM48410 www.ti.com LM48410 SNAS403E – FEBRUARY 2007 – REVISED MAY 2013 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,


    Original     		PDF LM48410 SNAS403E LM48410

    Untitled

    Abstract: No abstract text available
    Text: LM48410 www.ti.com LM48410 SNAS403D – FEBRUARY 2007 – REVISED JULY 2008 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,


    Original     		PDF LM48410 SNAS403D LM48410

    zf 9050

    Abstract: micro controller EM73P461A 8749 MICROCONTROLLER HTC lCD DISPLAY Em73p461
    Text: EM73P461A 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT inary Prelim GENERAL DESCRIPTION EM73P461A is an advanced single chip CMOS 4-bit one-time programming OTP micro-controller. It contains 4K/8K-byte ROM, 244-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/


    Original     		PDF EM73P461A EM73P461A 244-nibble 13-level 22-stage 12-bit zf 9050 micro controller 8749 MICROCONTROLLER HTC lCD DISPLAY Em73p461

    Siemens 3.15A NH Fuse

    Abstract: siemens fuse 100A Neozed SIEMENS FUSES 160A Fuse FUSE SIEMENS neozed fuse 200A 12KV Siemens 80A NH Fuse siemens diazed gg DIN43625
    Text: NEXT FIND IT TABLE OF CONTENTS MINIATURE DIAZED Mini fuses in five sizes to 20 Amps. • Slow Blow • Medium Blow Click for PDF file • Fast Blow • Super Fast Blow NEOZED CYLINDER NH "Bottle" fuses in five sizes to 200 Compact fuses in three sizes to Standard cylinder fuses are


    Original     		PDF 80HH24-537 100HH24-537 125HH24-537 160HH24-537 200HH24-537 6HH36-537 10HH36-537 16HH36-537 20HH36-537 25HH36-537 Siemens 3.15A NH Fuse siemens fuse 100A Neozed SIEMENS FUSES 160A Fuse FUSE SIEMENS neozed fuse 200A 12KV Siemens 80A NH Fuse siemens diazed gg DIN43625

    MOSFET R3D

    Abstract: ACM4532 ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800
    Text: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM


    Original     		PDF LM48410 LM48410 MOSFET R3D ACM4532 ECJ-3YB1C105K LM48410SQ TPSB106K016R0800

    EM73866

    Abstract: htc display 40 pin HTC lCD DISPLAY
    Text: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.


    Original     		PDF EM73866 EM73866 500-nibble 13-level 22-stage 12-bit htc display 40 pin HTC lCD DISPLAY

    l 101c 681

    Abstract: pj 986 iv PJ 986 pj 979 code
    Text: m e ki con. ALUMINUM ELECTROLYTIC CAPACITORS PF Low Im pedance, High R eliability Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series • Low impedance and high reliability withstanding 5000 hour load life at + 1 0 5 t: 3000/2000 hours


    OCR Scan     		PDF RCJ-03-23C 18X20 18X25 18X31 18X35 /100kHz 1051/120Hz l 101c 681 pj 986 iv PJ 986 pj 979 code

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSH50N60B IXSH50N60BS O-247

    FD9515

    Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
    Text: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International


    OCR Scan     		PDF T-35-25 IRFR020, IRFR022, IRFU020, IRFU022 FD9515 k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a

    TLCS-900

    Abstract: TMP96C041B TMP96C041BF TMP96C141BF
    Text: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T L C S - 9 0 0 v ' J - x TMP96C041B tt £ < 7 j£ ß # * ± 1 6 t i y h V < ? □ = ! > id h □ — "7 TLCS-900 v U — X N TM P96C 041B# U if £ Ò ^ s * l s i £ ¿ r 'f ijf f l z 4 '^ > t íT (is


    OCR Scan     		PDF TLCS-900 TMP96C041B TLCS-900v TMP96C041B: P96C041B TMP96C041 TMP96C041BF 16fcf TMP96C041BFià TMP96C141BF^ TLCS-900 TMP96C041B TMP96C041BF TMP96C141BF

    TMP95C061B

    Abstract: TMP95C061BF uips 16y p54
    Text: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T LC S- 9 0 0 /H v ' J - x TMP95C061B t t i; » £ < 7 j£ ß # * ± 1 6 ti y * l s £ i h v < ^ p = l> £ id hP-^TLC S-900/H vU -Xs { & m ± D :, ì m , r TM P95C 061B# j ¿ usto f c — 6 (D )S f ê L f f lf à } â , Ü # II


    OCR Scan     		PDF TLCS-900/H TMP95C061B TLCS-900/HvU-Xs TMP95C061B P95C061B TMP95C061BF TMP95C061BFà P-QFP100-1414-0 TMP95C061BEFià TMP95C061B uips 16y p54

    XF-TRC1102NLE

    Abstract: ecs motherboard AKUE 130uH 30MHZ 80MHZ XF-TRC1102NL
    Text: M e c h a n ica I; - \2 JO-m. t Iññññ ñññ 1 XMULTIPLE *ir « I 1 j XF-TRC1102NLE • 1 jyyyyyyy — -lU—0.4Í i 3EV. BCT Jfl A BHJ. D 6 S C *[rT ]O f AFPD W IZ ^ O U -B. 89- £ DATE 1— 3.2? £ * L '—û.fri SUGGESTED PTB LATfDUTiTW V ffif


    OCR Scan     		PDF XF-TRC1102NLE 130uH D65CR 30MHZ -20dB 80MHZ ecs motherboard AKUE 80MHZ XF-TRC1102NL

    diode lt 429

    Abstract: 7V03 lts 542
    Text: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A


    OCR Scan     		PDF 80N60AU1 OT-227 E153432 diode lt 429 7V03 lts 542

    D-6840

    Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
    Text: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •


    OCR Scan     		PDF 91S50B 20kHz IXSH17N100, IXSM17N100 125-R D-6840 D6840 TXYS IC-9017 c10006 d684

    Untitled

    Abstract: No abstract text available
    Text: r n THS BHMMN6 6 UNPUBUSHEK- 1— W LEAStt PM PUBLICATION— COPYWOHT - BY TYCO OECTROMCS CORPORATION. osr REVISIONS AA 22 * “ • W CHIS RE8BW B>- -OBCftlP TION 06JAN2009 REV PER E C O -0 9 —001491


    OCR Scan     		PDF 06JAN2009 C26800 100jj 100jalNCH AND/OR260' 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES


    OCR Scan     		PDF 247TM 50N60AU1 O-247 PLUS247TM 50N60AU1) 80A/ns

    BC445

    Abstract: BC446 TRANSISTOR C 460
    Text: SILICON EPITAXIAL TRANSISTOR «TÖ3»- DESCRIPTION BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers._


    OCR Scan     		PDF BC445 BC446 BC445 BC446 300mA 625mW 12mW/Â 100mA 100MHz- TRANSISTOR C 460

    45N120 ixys

    Abstract: ON601
    Text: mxYS IXSH 45N120 High Voltage, VCES I L O W V CE sa. I G B T C25 v CE(sat) 1200 V 75 A 3V Short Circuit SOA Capability Symbol Test Conditions v CES v CGR Tj =25°Cto 150°C 1200 Tj = 25° C to 150° C; RGE= 1 M£2 1200 Maximum Ratings V V v GES v GEM Continuous


    OCR Scan     		PDF 45N120 O-247 45N120 ixys ON601

    4588d

    Abstract: C8750 2814H
    Text: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160


    OCR Scan     		PDF 52N60AU1 to150 OT-227B, 52N60AU1 4588d C8750 2814H

    IXGH40N30

    Abstract: high current igbt
    Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient


    OCR Scan     		PDF IXGH40N30BD1 O-247 IXGH40N30 high current igbt

    32N60BU1

    Abstract: 32N60B
    Text: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C


    OCR Scan     		PDF IXGH39N60B IXGH39N60BS Cto150Â O-247 32N60BU1 32N60B

    Untitled

    Abstract: No abstract text available
    Text: b7 pTI^dttesd QOOTBSB T TOSHIBA {DISCRETE/OPTOï 9097250 TOSHIBA D I S C R E T E /OPTO 67C 0 9 3 5 3 D r - o 7 ~t'jr 1SV99 Silicon EpitaxiaJ ;Pin Type Diode Weight : 0.2g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION


    OCR Scan     		PDF 1SV99 100HHz 00IIH354