Untitled
Abstract: No abstract text available
Text: Voltage Range 6.8 - 400 Volts 1500 Watt Peak Puise Power 20 Watt Steady State @ 75 °C 15 Watt Steady State @ 100eC FEATURES * * * * * * * Glass Passivated Junction 1500 Watt surge capability at 1 mS Typically IR less than 5uA above 10V Excellent clamping capability
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-55eC
175eC
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Untitled
Abstract: No abstract text available
Text: n C MECHANICAL: A 1 3 - 5 0^0 4 — 100EC20M V L LR MATERIALS: -HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0. -SHIELD - .010" THICK, C26800 B R A S S PREPLATED WITH 30nlNCH MIN SEMI-BRIGHT NICKEL, SOLDER TABS POST DIPPED WITH lOO^INCH MIN SAC SOLDER.
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100EC20M
C26800
30nlNCH
80nlNCH
MA645
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTSt OPTO 44E D SIEMENS • â23b32b DGGLtcîM4 4 M S IE X LS K380 YELLOW LY K380 GREEN LG K380 HIGH EFFICIENCY RED T1 ARGUS LED LAMP *r- m -23 Package Dimensions in Inches mm 8w f*c *ro tlM è K S Ì sam» .142(3$} .126(3.2). -“ i01) «uo«)\
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23b32b
Ifs15
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gs 1117 ax
Abstract: VN66 TN0610L VN0606M
Text: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33
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TN0601L,
VN0606L/M,
VN66AFD
TN0601L
VN0606L
VN0606M
VN66AFD
O-237
P-37992--Rev.
gs 1117 ax
VN66
TN0610L
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PIV-1000
Abstract: BYT230PIV-1000 DIODE M4 marking BYT230PIV1000 BYT231PIV-1000 IR diodes 0B
Text: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 30 A 1000 V 1.8 V K2 A2 A2 l° ^ i K1 K1 M ' A1 K2 BYT231 PIV-1000 A1 i BYT230PIV-1000 80 ns FEATURES AND BENEFITS • ■ ■
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BYT230PIV-1000
BYT231
PIV-1000
DIODE M4 marking
BYT230PIV1000
BYT231PIV-1000
IR diodes 0B
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PDF
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Untitled
Abstract: No abstract text available
Text: Type 150 Axial Leaded Metallized Polyester Flame Retardant Wrap and Fill Axial Leaded Capacitors The Type 150 series axial lead metallized polyester capacitors are available in bulk or on tape and reel for automatic insertion. The tape wrap and fill construction
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Original
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UL510
UL94V-0
Dielectri14
Vdc/200
Vdc/250
Vdc/220
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Untitled
Abstract: No abstract text available
Text: 800, 801 SERIES RECTIFIER ASSEMBLIES Three Phase Bridges, 20-40 Amp, High Efficiency, ESP D ESCRIPTION This series of three phase bridges offers the highest efficiency possible for applications where nothing else will do. The series allows operation at full
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power diode with piv of 30v
Abstract: 688-10R
Text: 688 SERIES RECTIFIER ASSEMBLIES High Voltage Stacks, Standard and Fast Recovery FEATURES DESCRIPTION • • • • • • • T h is series of high power sta c k s h a s a unique p a cka gin g d esign that provides ch a ra cteristics not obtainable in conven
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500ns
power diode with piv of 30v
688-10R
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943P
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETb TMOS Single N-Channel Field Effect Transistors MMBF0 2 0 1 N Motore)! Puffernd Dtvio« N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rD 8(on)-1-0 OHM These miniature surface mount MOSFETb utilize Motorola's High
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MMBF0201N/D
OT-23
943P
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EAKD
Abstract: BUW12A
Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc
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C0NTH01UNG
O-218AC
EAKD
BUW12A
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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PDF
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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B85 diode
Abstract: DIODE B89 IRGPC50KD2
Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features
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IRGPC50KD2
-10jj3
O-247AC
B85 diode
DIODE B89
IRGPC50KD2
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5360-J
Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°
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fl23SbOS
T13/4
5360-DG
5360-GK
5360-E
LYS360-H
5360-F
5360-HL
5360-FJ
5360-J
5360-K
lg diode
C 5360
LG 42 t
5360
5360E
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Untitled
Abstract: No abstract text available
Text: M O TO ROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TM O S POWER FET 15 AMPERES This TM O S Pow er FET is designed fo r m e d iu m voltag e , high
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MTP15N15
21A-04
O-220AB
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MOSFET IRF 570
Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high
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IRF510
IRF511
IRF512
IRF513
MOSFET IRF 570
IRF 511 MOSfet
irf510 Motorola
transistor irf510
IRF510-513
power mosfet irf511
IRF*125
IRF511 MOSFET
Transistor motorola 513
511 MOSFET TRANSISTOR motorola
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CD4019
Abstract: mc14519b
Text: 'MOTOROLA SC {LOGIC} ifi I>F| fc,3b?552 OO?"!?!? 1 ,6367252 ^MOTOROLA SC. LOGIC 9 8 D 79717 D r-t> 7 ~ /h £ / MC14519B MOTOROLA CMOS MSI 4-BIT AND/OR SELECTOR (LO W PO W ER C O M P L E M E N T A R Y MOS) or QUAD 2-CHANNEL DATA SELECTOR or 4-BIT AND/OR SELECTOR
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MC14519B
C14519B
CD4019
mc14519b
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2N5640
Abstract: 2N5638 2N5639 MOTOROLA 2N5639
Text: 2N5638 thru 2N5640 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S S ym bol Value U n it Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vq G 30 Vdc V g SR 30 Vdc 'g f 10 m Adc PD 350 2.8 mW m W 'C Junction T em perature Range Tj - 6 5 to ^ 150
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2N5638
2N5640
O-226AA)
MPF4391
2N5638
2N5639
2N5640
2N5639 MOTOROLA
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nec en8
Abstract: REF02 REF01 REF-01 LT1019 LT1021 REF-01A REF-02 REF-02A REF-02E
Text: REF-01/REF-02 / T L i n t A ß TECHNOLOGY Precision Voltage References F€RTUft€S D€SCRIPTIOn • Trimmed Output ± 0 .3 % The REF-01/REF-02 are precision 10V and 5V bandgap references which provide stable output voltages over a ■ Low Drift—5ppm/°C Typical
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REF-Ol/REF-02
REF-02
REF-01/REF-02
REF-01
REF-02
350iQ
045-tOOIS
130-C/W
nec en8
REF02
REF01
LT1019
LT1021
REF-01A
REF-02A
REF-02E
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PDF
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LM13080N
Abstract: LM13080 12v electronic flasher without relay LM1308 LM 13080 N
Text: LM13080 EH National â t f Semiconductor LM13080 Programmable Power Operational Amplifier General Description The LM13080 is an internally compensated medium power operational amplifier designed for use in those applications requiring load currents of several hundred milliamperes.
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LM13080
LM13080
TL/H/7978-13
LM13080N
12v electronic flasher without relay
LM1308
LM 13080 N
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5517N
Abstract: 295 da hen ne 5517AN
Text: N E 5517 /5 5 1 7A Dual Operational Transconductance Amplifier Product Specification DESCRIPTION FEATURES T h e N E 5 5 1 7 c o n t a in s t w o c u r r e n t- c o n • Constant impedance buffers • AVbe of buffer is constant with amplifier Ibias change
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NE5517
NE5517/5517A
5517N
295 da hen ne
5517AN
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MTD3055E
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount
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b3h72SM
MTD3055E
DGT654G
MTD3055E
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350AB
Abstract: BF930 2291C 400R392U100AC8 400X1 400R821U450BE8
Text: RADIAL LEADED CAPACITORS Long Life High Ripple Computer Grade, 95°C Type 400-Standard/Type 400X-Max Cap/Type 400R-Max Ripple Designed for minicomputers and other long life power supply filte r applications, type 400 delivers nearly the capacitance o f the type 4CM b u t with 2 to 3 times the
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400-Standard/Type
400X-Max
400R-Max
400R681U450BD
400R821U450BE8
400X112U
450EC8
400X212U450BF8
400R560U450AK8
350AB
BF930
2291C
400R392U100AC8
400X1
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 IOC CE RIGHTS ^SERVED. □IST 16 REVISIONS DESCRIPTION LTR APVO DATE REVISE PER OAOO-0661 - 0 0 CK KC 07AUGOO D D 25.00±0.30 [985.25±1 1.81] 0.56±0.03 22.05± 1.18]
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OAOO-0661
07AUGOO
09N0V98
I0DEC96
100EC96
23FEB9S
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